MOSFET SMD Type P-Channel MOSFET SI2321DS-HF (KI2321DS-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● VDS (V) =-20V ● RDS(ON) ＜ 57mΩ (VGS =-4.5V) 1 ● RDS(ON) ＜ 76mΩ (VGS =-2.5V) 0.55 +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID =-3.3A (VGS =-4.5V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) ＜ 110mΩ (VGS =-1.8V) 1.1 +0.2 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 0-0.1 1 3 S +0.1 0.68 -0.1 G 1. Gate 2. Source 3. Drain D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation ID Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State PD RthJA -2.9 -2.6 -2.3 A -12 0.89 0.71 0.57 0.45 W 140 175 RthJF 75 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Foot V -3.3 IDM Ta = 25℃ Unit ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2321DS-HF (KI2321DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=-250μA, VGS=0V Min Typ -20 -1 VDS=-16V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V VDS=VGS ID=-250μA On state drain current ID(ON) -0.4 VDS=-5V, ID=-3.3A -6 3 Coss Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg 8 Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) tf Maximum Body-Diode Continuous Current Diode Forward Voltage *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking D1* F www.kexin.com.cn S 715 VGS=0V, VDS=-6V, f=1MHz *1 VGS=-4.5V, VDS=-6V, ID=-3.3A *1 pF 170 13 nC 1.2 2.2 VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω ID=-1.0A *1 IS VSD mΩ A Output Capacitance Qgs V 76 gFS Qgd -0.9 110 Ciss Gate Source Charge nA VGS=-1.8V, ID=-4A Forward Transconductance Gate Drain Charge ±100 VGS=-2.5V, ID=-2.8A VGS=-4.5V, VDS=-5V μA 57 Input Capacitance Turn-Off Fall Time 2 RDS(On) Unit V VDS=-16V, VGS=0V VGS=-4.5V, ID=-3.3A Static Drain-Source On-Resistance Max IS=-1.6A,VGS=0V 15 25 35 55 60 90 40 60 ns -1.6 A -1.2 V MOSFET SMD Type P-Channel MOSFET SI2321DS-HF (KI2321DS-HF) ■ Typical Characterisitics Output Characteristics 12 2V 10 10 8 8 I D - Drain Current (A) I D - Drain Current (A) VGS = 4.5 thru 2.5 V 6 1.5 V 4 2 0.4 0.8 6 4 TC = 125 C 2 0.5 V 0 0.0 Transfer Characteristics 12 25 C 1.0 V 1.2 1.6 - 55 C 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 2.5 Capacitance 1200 C - Capacitance (pF) ) r DS(on) - On-Resistance ( 2.0 0.25 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 900 Ciss 600 300 Coss 0.05 Crss VGS = 4.5 V 0.00 0 2 4 6 8 10 0 12 16 20 Normalized On-Resistance vs. Junction Temperature 1.5 r DS(on) - On-Resistance ( ) (Normalized) 2 1 0 2 8 Gate Charge 3 0 4 VDS - Drain-to-Source Voltage (V) VDS = 10 V ID = 3.3 A 4 0 12 ID - Drain Current (A) 5 V GS - Gate-to-Source Voltage (V) 1.5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1.0 4 6 Qg - Total Gate Charge (nC) 8 10 1.3 VGS = 4.5 V ID = 3.3 A 1.1 0.9 0.7 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2321DS-HF (KI2321DS-HF) ■ Typical Characterisitics 20 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 10 TJ = 150 C r DS(on) - On-Resistance ( I S - Source Current (A) ) 0.4 TJ = 25 C 1 0.2 ID = 3.3 A 0.1 0.0 0.1 0.0 0.3 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 0.4 10 ID = 250 A 0.3 8 0.2 6 Power (W) V GS(th) Variance (V) 2 0.1 4 0.0 TA = 25 C 2 - 0.1 . - 0.2 - 50 - 25 0 25 50 75 100 125 TJ - Temperature ( C) 0 150 0.01 0.1 Safe Operating Area 100 Limited by rDS(on) I D - Drain Current (A) 10 100 s, 10 s 1 1 ms 10 ms 100 ms 0.1 TA = 25 C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) 4 www.kexin.com.cn 1 Time (sec) 100 10 100 600 MOSFET SMD Type P-Channel MOSFET SI2321DS-HF (KI2321DS-HF) ■ Typical Characterisitics Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.kexin.com.cn 5