MOSFET SMD Type P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) SOT-23-3 ■ Features Unit: mm ● VDS (V) =-12V 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 65mΩ (VGS =-2.5V) 1 ● RDS(ON) ＜ 100mΩ (VGS =-1.8V) 0.55 ● RDS(ON) ＜ 50mΩ (VGS =-4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID =-3.85A (VGS =-4.5V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 +0.2 -0.1 Pb−Free Lead Finish 1 S 2 0-0.1 G 3 +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current *1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current *1 Power Dissipation *1 ID Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State PD RthJA *1 -3.0 -3.0 -2.45 A -12 1.19 0.75 0.76 0.48 W 105 166 RthJF 75 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Foot V -3.85 IDM Ta = 25℃ Unit ℃/W ℃ *1Surface Mounted on FR4 board. www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(On) On state drain current ID(ON) Min Typ VDS=-12V, VGS=0V -1 VDS=-12V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V VDS=VGS ID=-250μA -0.45 65 VGS=-1.8V, ID=-2.7A 100 -6 -3 VDS=-5V, ID=-3.85A 7 Output Capacitance Coss Reverse Transfer Capacitance Crss 200 Total Gate Charge Qg 8 Qgs Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) tf Maximum Body-Diode Continuous Current Diode Forward Voltage *1 Pulse test: PW ≤ 300 μs duty cycle ≤ 2 %. ■ Marking Marking M5* F www.kexin.com.cn S 715 VGS=0V, VDS=-6V, f=1MHz *1 VGS=-4.5V, VDS=-6V, ID=-3.85A *1 pF 275 15 nC 1.1 2.3 VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω ID=1.0A *1 IS VSD mΩ A gFS Qgd V 50 Ciss Gate Source Charge nA -0.9 VGS=-2.5V, ID=-3.4A VGS=-4.5V, VDS=-5V μA ±100 VGS=-4.5V, ID=-3.85A VGS=-2.5V, VDS=-5V Unit V Input Capacitance Gate Drain Charge Max -12 Forward Transconductance Turn-Off Fall Time 2 Test Conditions ID=-250μA, VGS=0V IS=-1.6A,VGS=0V 15 20 35 50 50 70 50 75 ns -1.6 A -1.2 V MOSFET SMD Type P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) ■ Typical Characterisitics 12 12 10 V GS = 4.5 thru 2 V I D - Drain Current (A) I D - Drain Current (A) 10 8 6 1.5 V 4 8 6 4 T C = 125 °C 2 2 0 0 0.0 25 °C - 55 °C 0 1 2 V DS 3 4 5 6 0.5 V GS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 - Gate-to-Source Voltage (V) Transfer Characteristics 0.30 1200 0.25 1000 C - Capacitance (pF) R DS(on) - On-Resistance ( Ω) Output Characteristics 0.20 0.15 V GS = 1.8 V 0.10 1.0 C iss 800 600 400 C oss V GS = 2.5 V C rss 200 0.05 V GS = 4.5 V 0 0.00 0 2 4 6 8 10 0 12 2 4 V DS ID - Drain Current (A) 8 10 12 - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 5 1.6 V DS = 6 V I D = 3.5 A 4 R DS(on) - On-Resistance (Ω) (Normalized) V GS - Gate-to-Source Voltage (V) 6 3 2 1 1.4 V GS = 4.5 V I D = 3.5 A 1.2 1.0 0.8 0 0 2 4 6 8 Q g - Total Gate Charge (nC) Gate Charge 10 0.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) ■ Typical Characterisitics 0.4 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 20 10 T J = 150 °C T J = 25 °C 0.2 I D = 3.5 A 0.1 0.0 1 0.0 0.3 0.2 V SD 0.4 0.6 0.8 1.0 0 1.2 1 3 4 5 V GS - Gate-to-Source Voltage (V) - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 12 I D = 250 µA 0.4 10 8 0.2 Power (W) V GS(th) Variance (V) 2 0.0 6 - 0.2 4 - 0.4 2 T A = 25 °C . - 0.6 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 T J - Temperature (°C) ID - Drain Current (A) Threshold Voltage Single Pulse Power 100 10 Limited by R DS(on)* 1 ms, 100 µs 10 ms 100 ms 1 1 s 10 s DC, 100 s 0.1 T A = 25 °C Single Pulse 0.01 0.1 * V GS 1 10 www.kexin.com.cn 100 V DS - Drain-to-Source Voltage (V) minimum V GS at which R DS(on) is specified Safe Operating Area 4 10 Time (s) 100 600 MOSFET SMD Type P-Channel MOSFET SI2315BDS-HF (KI2315BDS-HF) ■ Typical Characterisitics 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: P DM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130 °C/W 3. TJM - TA = PDM Z thJA(t) 4. Surface Mounted 0.01 10 -4 Single Pulse 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.kexin.com.cn 5