MOSFET SMD Type P-Channel MOSFET SI2343DS-HF (KI2343DS-HF) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● RDS(ON) ＜ 53mΩ (VGS =-10V) 1 0.55 ● ID =-4 A (VGS =-10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) =-30V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 86mΩ (VGS =-4.5V) +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 0-0.1 G 1 3 S 1. Gate 2. Source +0.1 0.38 -0.1 Pb−Free Lead Finish 3. Drain D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5s Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA = 25 °C TA = 70 °C Pulsed Drain Current Power Dissipation ID TA = 70 °C PD Thermal Resistance.Junction- to-Ambient RthJA Thermal Resistance.Junction- to-Foot RthJF V -4 -3.1 -3.2 -2.5 A -15 IDM TA = 25 °C Unit 1.25 0.75 0.8 0.48 100 166 50 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2343DS-HF (KI2343DS-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance On state drain current VGS(th) RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Note.1: Pulse test: PW ≤ 300 μs, duty cycle ≤ 2 %. ■ Marking Marking 2 F3 F www.kexin.com.cn Test Conditions Min Typ Max -30 ID=-250μA, VGS=0V V VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±20V -1 VDS=VGS ID=-250μA VGS=-10V, ID=-4A VGS=-4.5V, ID=-3.1A VGS=-5V, VDS=-10V VDS=-5V, ID=-4A (Note.1) (Note.1) uA ±100 nA -3 V 53 (Note.1) (Note.1) Unit 86 -15 mΩ A 10 S 540 VGS=0V, VDS=-15V, f=1MHz pF 131 105 14 VGS=-10V, VDS=-15V, ID=-4A 21 nC 1.9 3.7 VDD = - 15 V, RL = 15 Ω ID ≅ - 1A, VGEN = - 10 V RG = 6 Ω IS=-1A,VGS=0V 10 15 15 25 31 50 20 30 ns -1 A -1.2 V MOSFET SMD Type P-Channel MOSFET SI2343DS-HF (KI2343DS-HF) ■ Typical Characterisitics 15 15 V GS = 10 thru 5 V 4 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 9 6 3 V 3 9 6 T C = 125 °C 3 25 °C 0 0 1 2 3 4 0 0.0 5 0.5 1.0 VDS - Drain-to-Source Voltage (V) 2.5 3.0 3.5 4.0 Transfer Characteristics 0.12 1000 0.10 0.08 C - Capacitance (pF) 800 V GS = 4.5 V 0.06 V GS = 10 V 0.04 C iss 600 400 C oss 200 0.02 C rss 0.00 0 0 3 6 9 12 15 0 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.6 V DS =15 V I D = 4.0 A 1.4 6 4 2 (Normalized) 8 R DS(on) - On-Resistance V GS - Gate-to-Source Voltage (V) 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 1.5 - 55 °C V GS = 4.0 V I D = 4.0 A 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge 12 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2343DS-HF (KI2343DS-HF) ■ Typical Characterisitics 0.12 20 0.10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 T J = 150 °C T J = 25 °C I D = 4.0 A 0.08 ID = 1 A 0.06 0.04 0.02 0.00 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 4 10 12 I D = 250 µA 10 0.4 8 Power (W) 0.2 0.0 6 4 - 0.2 - 0.4 - 50 8 On-Resistance vs. Gate-to-Source Voltage 0.6 T A = 25 °C 2 - 25 0 25 50 75 . 125 100 0 150 0.01 1 0.1 TJ - Temperature (°C) Single Pulse Power 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.0001 1 0.1 P(t) = 0.001 ID(on) Limited P(t) = 0.01 P(t) = 0.1 T A = 25 °C Single Pulse BVDSS Limited 0.01 0.1 P(t) = 1 P(t) = 10 DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.kexin.com.cn 10 Time (s) Threshold Voltage 4 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage V GS(th) Variance (V) 2 100 600 MOSFET SMD Type P-Channel MOSFET SI2343DS-HF (KI2343DS-HF) ■ Typical Characterisitics 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 P DM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. TJM - T A = PDM Z thJA (t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.kexin.com.cn 5