MOSFET SMD Type P-Channel MOSFET SI2333DS (KI2333DS) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● ID =-5.3 A (VGS =-4.5V) 1 0.55 ● VDS (V) =-12V +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 ■ Features 2 ● RDS(ON) ＜ 32mΩ (VGS =-4.5V) +0.1 0.95 -0.1 +0.1 1.9 -0.1 ● RDS(ON) ＜ 42mΩ (VGS =-2.5V) +0.05 0.1 -0.01 G 3. Drain 1 3 S 1. Gate 2. Source +0.1 0.38 -0.1 0-0.1 +0.1 0.97 -0.1 ● RDS(ON) ＜ 59mΩ (VGS =-1.8V) D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5s Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current TA = 25 °C TA = 70 °C Pulsed Drain Current Power Dissipation ID TA = 70 °C PD V -5.3 -4.1 -4.2 -3.3 A -20 IDM TA = 25 °C Unit 1.25 0.75 0.8 0.48 Thermal Resistance.Junction- to-Ambient RthJA 100 166 Thermal Resistance.Junction- to-Foot RthJF - 50 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET SI2333DS (KI2333DS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance (Note.1) On state drain current (Note.1) Forward Transconductance (Note.1) Input Capacitance RDS(On) ID(ON) gFS ID=-250μA, VGS=0V Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Min Typ -12 VDS=-9.6V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V VDS=VGS ID=-250μA -0.4 VGS=-1.8V, ID=-2A 59 -20 300 11.5 VGS=-4.5V, VDS=-6V, ID=-5.3A td(on) 25 IS Note.1:Pulse test: PW ≤ 300 μs, duty cycle ≤ 2 %. ■ Marking Marking VGS=-4.5V, VDS=-6V, RL=6Ω, RG=6Ω,ID=-1A tf VSD E3* www.kexin.com.cn pF 390 Turn-On DelayTime Maximum Body-Diode Continuous Current S 1100 VGS=0V, VDS=-6V, f=1MHz 3.2 Diode Forward Voltage mΩ A 17 Qgd tr V 42 Gate Drain Charge td(off) -1 VGS=-2.5V, ID=-4.6A Qgs Turn-Off DelayTime nA 32 VDS=-5V, ID=-5.3A uA ±100 VGS=-4.5V, ID=-5.3A VGS=-5V, VDS=-4.5V Unit V -1 Gate Source Charge Turn-On Rise Time Max VDS=-9.6V, VGS=0V Ciss Turn-Off Fall Time 2 Test Conditions IS=-1A,VGS=0V 18 nC 1.5 40 45 70 72 110 60 90 ns -1 A -1.2 V MOSFET SMD Type P-Channel MOSFET SI2333DS (KI2333DS) ■ Typical Characterisitics 20 20 V GS = 5 V thru 2.5 V T C = - 55 °C 2 V 25 °C 16 ID - Drain Current (A) ID - Drain Current (A) 16 12 8 1.5 V 4 125 °C 12 8 4 1 V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.15 1800 1500 0.12 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.09 V GS = 1.8 V 0.06 V GS = 2.5 V 0.03 1200 C iss 900 600 C oss C rss 300 V GS = 4.5 V 0.00 0 0 4 8 12 16 20 0 3 6 12 Capacitance On-Resistance vs. Drain Current 5 1.4 VDS = 6 V ID = 5.3 A 4 1.3 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 9 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 3 2 1 VGS = 4.5 V ID = 5.3 A 1.2 1.1 1.0 0.9 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge 15 0.8 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET SI2333DS (KI2333DS) ■ Typical Characterisitics 0.15 20 T J = 150 °C R DS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 25 °C 1 0.09 I D = 5.3 A ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.12 0.2 0.4 0.6 0.8 1.0 0 1.2 1 3 5 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 12 10 I D = 140 µA 0.3 8 Power (W) 0.2 0.1 6 4 0.0 T A = 25 °C 2 - 0.1 - 0.2 - 50 - 25 0 25 50 . 75 100 0 125 150 0.01 0.1 10 1 Time (s) TJ - Temperature (°C) Single Pulse Power Threshold Voltage 100 ID - Drain Current (A) Limited by R DS(on)* I DM Limited P(t) = 0.0001 10 P(t) = 0.001 1 P(t) = 0.01 I D(on) Limited P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 DC T A = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 4 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) V GS(th) Variance (V) 2 www.kexin.com.cn 100 100 600 MOSFET SMD Type P-Channel MOSFET SI2333DS (KI2333DS) ■ Typical Characterisitics 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.kexin.com.cn 5