Transistors SMD Type SMD Type PNP Transistors KST8550 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 Collector Current: IC=-1.5A +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1.5 A Collector Power Dissipation PC 0.3 W Junction Temperature Tj 150 Storage Temperature Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditi ons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100 A, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100 A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 A Collector cut-off current ICEO VCE=-20V, IB=0 -1 A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 A DC current gain hFE VCE=-1V, IC=-100mA 120 VCE=-1V, IC=-800mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V,VCE=-10mA -1 V 20 pF output capacitance Cob Transition frequency fT VCB=-10V,IE=0,f=1MHz VCE= -10V, IC= -50mA,f=30MHz 100 MHz hFE(1) Classification Type KST8550 KST8550-L KST8550-H KST8550-J Range 200-350 120-200 144-202 300-400 Marking Y2 www.kexin.com.cn 1 Transistors SMD Type SMD Type KST8550 Typical Characteristics Static Characteristic hFE 500 -180 —— IC 1mA Ta=100℃ 0.9mA 0.8mA -120 0.7mA hFE -140 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -160 0.6mA -100 0.5mA -80 0.4mA -60 0.3mA -40 0.2mA -20 IB=0.1mA -0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 COLLECTOR-EMITTER VOLTAGE VBEsat -1000 —— -4.0 VCE -4.5 -1 (V) -10 -100 COLLECTOR CURRENT IC VCEsat -1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 Ta=25℃ -700 -600 Ta=100℃ -500 VCE=-1V 10 -0.1 -5.0 -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 100 -400 -300 IC -1000 (mA) IC —— -100 Ta=100℃ Ta=25℃ -10 β=10 -200 -0.1 -1 -10 -100 COLLECTOR CURRENT VBE -1000 —— IC β=10 -1 0.2 -1000 -1 -10 -100 COLLECTOR CURRENT (mA) IC Cob/ Cib 100 IC —— VCB/ VEB f=1MHz IE=0/ IC=0 (pF) o -1 VCE=-1V -300 -400 -500 -600 -700 BASE-EMMITER VOLTAGE fT VBE -800 -900 —— IC COLLECTOR POWER DISSIPATION Pc (mW) fT TRANSITION FREQUENCY 2 www.kexin.com.cn -10 -10 Pc 350 VCE-10V o Ta=25 C -1 -1 REVERSE VOLTAGE (mV) 100 10 1 -0.2 -1000 (MHz) 500 Cob CAPACITANCE COLLCETOR CURRENT Ta=25℃ -10 -0.1 -200 o Ta=25 C C Ta=100 C IC (mA) Cib -100 -1000 (mA) -100 —— V 20 (V) Ta 300 250 200 150 100 50 0 0 25 50 75 100 125 150