Transistors SMD Type NPN Transistors MJD13002 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 ● Power Switching Applications +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 400 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 800 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 600 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 400 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 600 V , IE= 0 100 Collector- emitter cut-off current ICEO VCE= 400 V , IE= 0 100 IEBO Emitter cut-off current V 6 VEB= 6V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=200 mA, IB=40mA 0.5 Base - emitter saturation voltage VBE(sat) IC=200 mA, IB=40mA 1.1 hFE(1) VCE= 10V, IC= 200mA 9 hFE(2) VCE= 10V, IC= 0.25 mA 5 DC current gain Unit tf Storage time ts IC=1A, IB1=-IB2=0.2A VCC=100V Transition frequency fT VCE= 10V, IC= 100mA,f=1MHz V 40 0.5 Fall time uA 2.5 5 uS MHz ■ Classification of hfe(1) Type MJD13002-A MJD13002-B MJD13002-C MJD13002-D MJD13002-E MJD13002-F Range 9-15 15-20 20-25 25-30 30-35 35-40 Marking 3002A 3002B 3002C 3002D 3002E 3002F www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MJD13002 ■ Typical Characterisitics Static Characteristic COLLECTOR CURRENT IC (mA) 250 10mA 9mA 8mA 7mA 150 6mA 5mA 100 4mA Ta=100℃ Ta=25℃ 10 3mA 50 2mA IB=1mA 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE V BEsat 1000 12 1 14 1 —— IC V CEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC —— IC BE 600 fT 10 TRANSITION FREQUENCY fT (MHz) T =2 5℃ a COLLECTOR CURRENT IC (mA) T =1 00℃ a 400 10 V 1 200 1 800 1000 C ob /Cib —— V CB /VEB COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 Ta=25 ℃ 100 Cob 10 1 REVERSE VOLTAGE www.kexin.com.cn 10 V (V) 30 —— IC 6 4 2 40 60 80 COLLECTOR CURRENT PC —— IC a (mA) 100 120 T 300 200 100 0 1 0.1 (mA) Ta=25℃ 8 40 0 Cib IC COMMON EMITTER VCE=10V 0 20 1200 800 100 COLLECTOR CURREMT 100 10 Ta=25℃ BASE-EMMITER VOLTAGE VBE (mV) CAPACITANCE C (pF) IC 100 10 0.5 800 COMMON EMITTER VCE=10V 1000 —— (mA) Ta=100 ℃ (mA) 800 0 800 100 IC β=5 800 0.1 10 COLLECTOR CURRENT VCE (V) β=5 2 —— I C COMMON EMITTER VCE= 10V 200 0 h FE 100 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE 300 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 (℃) 150