Transistors SMD Type PNP Transistors 2SB1407S TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 ■ Features ● Low frequency power amplifier +0.15 1.50 -0.15 Unit: mm +0.1 2.30 -0.1 +0.8 0.50 -0.7 0.60-+ 0.1 0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 2.3 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 3 .8 0 ● Complementary to 2SD2121 +0.15 4 .60 -0.15 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -35 Collector - Emitter Voltage VCEO -35 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -2.5 Collector Current - Pulse ICP -3 Collector Power Dissipation PC 18 Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -1 mA， IE=0 -35 Typ Max V Collector- emitter breakdown voltage VCEO Ic= -10 mA, RBE=∞ -35 Emitter - base breakdown voltage VEBO IE= -1 mA， IC=0 -5 Collector-base cut-off current ICBO VCB= -35V , IE=0 -20 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-2 A, IB=-200 mA -1 Base - emitter saturation voltage VBE(sat) IC=-2 A, IB=-200 mA -1.2 Base to emitter voltage VBE DC current gain hFE VCE= -2V, IC= -1.5 A Unit uA V -1.5 VCE= -2V, IC= -500 mA 60 VCE= -2V, IC= -1.5 A 20 320 ■ Classification of hfe(1) Type 2SB1407S-B 2SB1407S-C 2SB1407S-D Range 60-120 100-200 160-320 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1407S ■ Typical Characterisitics Maximum Collector Dissipation Curve Area of Safe Operation Collector Current IC (A) –10 20 10 0 –1.0 –0.3 Typical Output Characteristics –1.6 –10 –1.2 –8 –6 –0.8 –4 –2 mA –0.4 2 –1 –2 –3 –4 –5 Collector to emitter Voltage VCE (V) –0.1 –0.03 –0.01 –0.03 lC = 10 lB Ta = 25。 C –0.1 –0.3 –1.0 Collector current IC (A) www.kexin.com.cn –3.0 100 30 VCE = –2 V Ta = 25 C –0.1 –0.3 –1.0 Collector current IC (A) –3.0 Typical Transfer Characteristics Saturation Voltage vs. Collector Current –0.3 300 10 –0.03 –2.0 Collector current IC (A) Collector to emitter saturation voltage VCE (sat) (V) –1.0 –3 –10 –30 –100 Collector to emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 。 0 Ta = 25 C 。 IB = 0 10 ms 1,000 –16 –14 –12 DC current transfer ratio hFE Collector Current IC (A) –2.0 Ta = 25ϒC 1 Shot Pulse –0.1 –1 150 PW = IC (max) 。 50 100 Case Temperature TC ( C) iC (peak) –3 s 1m n tio era Op 。C) DC = 25 (T C Collector power dissipation Pc (W) 30 –1.6 –1.2 –0.8 –0.4 0 –0.5 VCE = –2 V 。 Ta = 25 C –0.4 –0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V)