SMD Type Transistors

Transistors
SMD Type
NPN Transistors
2SC3838-HF
SOT-23-3
Unit: mm
■ Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
● Small NF.
1
0.55
● Small rbb’·Cc and high gain.
+0.2
1.6 -0.1
+0.2
2.8 -0.1
● High transition frequency.
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
● Pb−Free Package May be Available. The G−Suffix Denotes a
1.1
+0.2
-0.1
Pb−Free Lead Finish
1. Base
0-0.1
+0.1
0.68 -0.1
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Collector - Base Voltage
Parameter
VCBO
20
Collector - Emitter Voltage
VCEO
11
Emitter - Base Voltage
Unit
V
VEBO
3
Collector Current - Continuous
IC
50
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
Storage Temperature Range
TJ
150
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= 100 μA, IE= 0
20
Collector- emitter breakdown voltage
VCEO
Ic= 1 mA,IB =0
11
Emitter - base breakdown voltage
VEBO
IE= 100μA, IC= 0
3
Collector-base cut-off current
ICBO
VCB= 20 V , IE= 0
0.5
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0.5
V
Collector-emitter saturation voltage
VCE(sat)
IC=10 mA, IB=5mA
0.5
Base - emitter saturation voltage
VBE(sat)
IC=10 mA, IB=5mA
1.2
hFE
VCE= 10V, IC= 5mA
DC current gain
rbb’.Cc
Collector-base time constant
Noise figure
NF
VCE = 6 V, IC = 2 mA, f=500 MHz,
Rg=50Ω
Collector output capacitance
Cob
VCB= 10V, IE= 0,f=1MHz
Transition frequency
fT
82
VCB = 10 V, IC = 10 mA, f=31.8 MHz,
VCE= 10V, IC= 10mA,f=500Mhz
uA
V
240
4
12
3.5
3.2
PS
dB
1.5
1.4
Unit
pF
GHz
■ Classification of hfe
Type
2SC3838-P-HF 2SC3838-Q-HF
2SC3838-Y-HF
Range
82-180
100-200
120-240
Marking
ADP F
ADQ F
ADY F
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