-,$1*68&+$1*-,$1*(/(&7521,&67(&+12/2*<&2/7' 6273ODVWLF(QFDSVXODWH7UDQVLVWRUV %& 62 7 TRANSISTOR (NPN) )($785(6 1. BASE 2. EMITTER For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) z z z z z 3. COLLECTOR 0$;,0805$7,1*67a ℃XQOHVVRWKHUZLVHQRWHG 9DOXH 8QLW 9&%2 6\PERO Collector-Base Voltage 3DUDPHWHU 50 V 9&(2 Collector-Emitter Voltage 45 V 9(%2 Emitter-Base Voltage 5 V ,& Collector Current -Continuous 0.5 A 3& Collector Power Dissipation 0.3 W 7M Junction Temperature 150 ℃ 7VWJ Storage Temperature -55-150 ℃ (/(&75,&$/&+$5$&7(5,67,&67a ℃XQOHVVRWKHUZLVHVSHFLILHG 3DUDPHWHU 6\PERO 7HVW FRQGLWLRQV 0in Typ 0ax Unit &ROOHFWRUEDVHEUHDNGRZQYROWDJH VCBO IC= 10μA, IE=0 50 V &ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH VCEO IC= 10mA, IB=0 45 V (PLWWHUEDVHEUHDNGRZQYROWDJH VEBO IE= 1μA, IC=0 5 V &ROOHFWRUFXWRIIFXUUHQW ICBO VCB= 45 V , IE=0 0.1 μA (PLWWHUFXWRIIFXUUHQW IEBO VEB= 4V, IC=0 0.1 μA hFE(1) VCE= 1V, IC= 100mA 100 hFE(2) VCE= 1V, IC= 500mA 40 '&FXUUHQWJDLQ 600 &ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH VCE(sat) IC= 500mA, IB= 50mA 0.7 V %DVHHPLWWHUVDWXUDWLRQYROWDJH VBE(sat) IC= 500mA, IB= 50mA 1.2 V 1.2 V %DVHHPLWWHUYROWDJH VBE VCE= 1 V, IC= 500mA &ROOHFWHUFDSDFWLDQFH Cob VCB=10V ,f=1MHz 7UDQVLWLRQIUHTXHQF\ fT VCE= 5 V, IC= 10mA f=100MHz 10 pF 100 MHz &/$66,),&$7,212) hFE 5DQN %& %& %& 5DQJH 0DUNLQJ $ % & C,Aug,2013 Typical Characteristics Static Characteristic 0.9mA 240 0.8mA IC 200 COMMON EMITTER Ta=25℃ o 0.7mA 0.6mA 160 0.5mA 120 0.4mA 0.3mA 80 Ta=100 C 400 DC CURRENT GAIN (mA) 1mA COLLECTOR CURRENT hFE —— IC 500 hFE 280 BC817 300 o Ta=25 C 200 0.2mA 40 VCE= 1V IB=0.1mA 0 100 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE 14 16 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1.0 Ta=25℃ 0.6 Ta=100℃ 500 100 VCEsat —— 0.4 β=10 0.8 10 COLLECTOR CURRENT VBEsat —— IC 1.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1 (V) IC (mA) IC β=10 0.3 0.2 Ta=100℃ 0.1 0.4 Ta=25℃ 0.2 0.1 1 10 COLLECTOR CURRENT IC 500 —— IC 0.0 0.1 500 100 1 (mA) 10 100 COLLECTOR CURRENT VBE Cob / Cib 100 —— IC VCB / VEB f=1MHz IE=0 / IC=0 IC (mA) 50 o Ta=25 C (pF) 100 Cib C COLLECTOR CURRENT o CAPACITANCE Ta=100 C 10 Ta=25℃ 500 (mA) 10 1 Cob VCE=1V 0.1 0.3 1 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE fT —— 0.9 1.0 5 10 REVERSE VOLTAGE IC Pc 0.4 (MHz) 100 TRANSITION FREQUENCY fT 0 VBE(V) COLLECTOR POWER DISSIPATION Pc (W) 300 0.8 —— V (V) Ta 0.3 0.2 0.1 VCE=5V o Ta=25 C 10 1 60 10 COLLECTOR CURRENT IC (mA) 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) C,Aug,2013