JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE High Current Rating Lower RDS(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 8 Pulsed Drain Current IDM 32 Single Pulsed Avalanche Energy (note1) EAS 250 mJ Thermal Resistance from Junction to Ambient RθJA 62.5 ℃/W TJ, TSTG -55 ~+150 TL 260 Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds V A ℃ A,Jan,2014 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 650 V Drain-source diode forward voltage VSD VGS = 0V, IS =8A 1.4 Zero gate voltage drain current IDSS VDS =650V, VGS =0V 10 µA Gate-body leakage current IGSS VDS =0V, VGS =±30V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 4.0 V Static drain-source on-resistance RDS(on) VGS =10V, ID =4A 1.0 1.4 Ω VDS =50V, ID =3.9A 8.5 On characteristics (note2) Forward transconductance gfs 2.0 S Dynamic characteristics (note 3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 1255 VDS =25V,VGS =0V,f =1MHz 135 pF 16 Switching characteristics (note 3) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf 28 VDS =520V,VGS =10V,ID =8A 36 nC 4.5 12 45 VDD=325V, RG=25Ω, ID =8A 130 170 ns 140 Notes : 1. L=7mH, IL=8A, VDD=50V, RG=25Ω, Starting TJ=25℃. 2. Pulse Test: Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. A,Jan,2014 Typical Characteristics CJPF08N65 Transfer Characteristics Output Characteristics 8 8 Pulsed VGS= 6V、 8V、10V VDS=50V Pulsed (A) 6 Ta=100℃ ID DRAIN CURRENT DRAIN CURRENT ID (A) VGS=5.5V 6 4 VGS=5V 2 4 Ta=25℃ 2 VGS=4.5V 0 0 0 10 20 30 DRAIN TO SOURCE VOLTAGE VDS 40 0 (V) 1 2 3 4 5 GATE TO SOURCE VOLTAGE VGS 6 RDS(ON)—— VGS RDS(ON) —— ID 8 3.0 Ta=25℃ Pulsed Pulsed ID=4A 7 VGS=10V 1.5 ( Ω) RDS(ON) 2.0 6 5 ON-RESISTANCE RDS(ON) ( Ω) 2.5 ON-RESISTANCE 7 (V) 1.0 4 3 Ta=100℃ 2 0.5 1 Ta=25℃ 0.0 0 0 2 4 6 DRAIN CURRENT 8 ID 10 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 10 5 (V) 4 ID=250uA VTH 1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) Pulsed Ta=100℃ 0.1 Ta=25℃ 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE VSD (V) 1.0 1.2 3 2 1 0 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) A,Jan,2014