NCE N-Channel Enhancement Mode Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ60P05
P-Channel Enhancement Mode Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
V
mΩ@10V
A
SOP8
Description
The CJQ60P05 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Feature
Application
ƽ VDS =-60V,ID =-5A
ƽ Power switching application
RDS(ON) <80mȍ @ VGS=-10V
ƽ Hard switched and high frequency circuits
ƽ High density cell design for ultra low RDS(ON)
ƽ DC-DC Converter
ƽ Fully characterized avalanche voltage and current
ƽ Excellent package for good heat dissipation
Equivalent Circuit
MARKING:
Absolute Maximum Ratings (Ta=25ćunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
-60
V
±20
V
Drain Current-Continuous
ID
-5
A
Pulsed Drain Current(Note 1)
IDM
-25
A
Operating Junction
TJ
150
ć
TSTG
-55 ~+150
ć
TL
260
ć
RșJA
100
ć/W
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8'' form case for 10s)
Thermal Resistance ,Junction-to-Ambient(Note 2)
www.cj-elec.com
1
A-1,Nov,2014
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Ta =25 Я unless otherwise specified
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250ȝA
-60
Zero Gate Voltage Drain Current
IDSS
VDS=-60V,VGS=0V
-1
ȝA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250ȝA
-3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
80
mȍ
gFS
VDS=-15V,ID=-5A
Parameter
Typ
Max
Unit
Off Characteristics
V
On Characteristics (Note 3)
Forward Transconductance
-1.5
5
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1450
pF
145
pF
110
pF
-
8
ns
VDS=-20V,VGS=0V,
f=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-30V, ,RL=30ȍ
-
9
ns
td(off)
VGS=-10V,RGEN=6ȍ
-
65
ns
-
30
ns
-
26
nC
4.5
nC
7
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-30V,ID=-5A,
VGS=-10V
-
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=-3A
-1.2
-5
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ” 10 sec.
3. Pulse Test: Pulse Width ” 300ȝs, Duty Cycle ” 2%.
4. Guaranteed by design, not subject to production
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A-1,Nov,2014
P8
Symbol
A
A1
A2
b
c
D
e
E
E1
L
©
Dimensions In Millimeters
Min
Max
Dimensions In Inches
Min
Max
˄%6&˅
˄%6&˅
e
e
e
e
P8
3A-1,Nov,2014
P8
4A-1,Nov,2014