JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ60P05 P-Channel Enhancement Mode Power MOSFET V(BR)DSS RDS(on)MAX ID V mΩ@10V A SOP8 Description The CJQ60P05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Feature Application ƽ VDS =-60V,ID =-5A ƽ Power switching application RDS(ON) <80mȍ @ VGS=-10V ƽ Hard switched and high frequency circuits ƽ High density cell design for ultra low RDS(ON) ƽ DC-DC Converter ƽ Fully characterized avalanche voltage and current ƽ Excellent package for good heat dissipation Equivalent Circuit MARKING: Absolute Maximum Ratings (Ta=25ćunless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit Unit -60 V ±20 V Drain Current-Continuous ID -5 A Pulsed Drain Current(Note 1) IDM -25 A Operating Junction TJ 150 ć TSTG -55 ~+150 ć TL 260 ć RșJA 100 ć/W Storage Temperature Range Lead Temperature for Soldering Purposes(1/8'' form case for 10s) Thermal Resistance ,Junction-to-Ambient(Note 2) www.cj-elec.com 1 A-1,Nov,2014 026)(7(/(&75,&$/&+$5$&7(5,67,&6 Ta =25 Я unless otherwise specified Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250ȝA -60 Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V -1 ȝA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250ȝA -3.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5A 80 mȍ gFS VDS=-15V,ID=-5A Parameter Typ Max Unit Off Characteristics V On Characteristics (Note 3) Forward Transconductance -1.5 5 S Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss 1450 pF 145 pF 110 pF - 8 ns VDS=-20V,VGS=0V, f=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-30V, ,RL=30ȍ - 9 ns td(off) VGS=-10V,RGEN=6ȍ - 65 ns - 30 ns - 26 nC 4.5 nC 7 nC Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-30V,ID=-5A, VGS=-10V - Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-3A -1.2 -5 V A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300ȝs, Duty Cycle 2%. 4. Guaranteed by design, not subject to production ZZZFMHOHFFRP A-1,Nov,2014 P8 Symbol A A1 A2 b c D e E E1 L © Dimensions In Millimeters Min Max Dimensions In Inches Min Max ˄%6&˅ ˄%6&˅ e e e e P8 3A-1,Nov,2014 P8 4A-1,Nov,2014