CHENMKO ENTERPRISE CO.,LTD CHM6426XPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. (SC-62/SOT-89 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. 1.6MAX. 4.6MAX. 0.4+0.05 2.5+0.1 0.8MIN. CONSTRUCTION * N-Channel Enhancement +0.08 0.45-0.05 +0.08 0.40-0.05 +0.08 0.40-0.05 1.50+0.1 1.50+0.1 1 1 Gate D (3) CIRCUIT 4.6MAX. 1.7MAX. 2 3 2 Drain 3 Source (1) G Dimensions in millimeters S (2) Absolute Maximum Ratings Symbol SC-62/SOT-89 TA = 25°C unless otherwise noted Parameter CHM6426XPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 3 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 12 1300 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C 100 °C/W Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 2008-03 ELECTRICAL CHARACTERISTIC ( CHM6426XPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 3 V (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA 1 VGS=10V, ID=3A 75 90 VGS=4.5V, ID=2.4A 88 110 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 665 VDS = 25V, VGS = 0V, f = 1.0 MHz 75 pF 40 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 13.4 VDS=30V, ID=3A 17.8 nC 1.7 VGS=10V 2.8 t on Turn-On Time V DD= 30V 13 26 tr Rise Time I D = 1.0A , VGS = 10 V 4 8 t off Turn-Off Time RGEN= 6 Ω 33 66 tf Fall Time 3 6 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 3A , VGS = 0 V (Note 1) (Note 2) 3.0 A 1.1 V RATING CHARACTERISTIC CURVES ( CHM6426XPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 20 8 V G S =1 0 , 9 , 8 V I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 15 10 VG S =4 . 0 V 5 6 4 TJ=-55°C 2 TJ=125°C VG S =3 . 0 V 0 0 1.0 3.0 4.0 2.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) TJ=25°C 0 5.0 0 5.0 6.0 VGS=10V ID=3A 1.9 R DS(on) , NORMALIZED 8 6 4 2 0 0 3 6 9 Qg , TOTAL GATE CHARGE (nC) 12 15 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) 4.0 2.2 VDS=30V ID=3A THRESHOLD VOLTAGE 3.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge Vth , NORMALIZED GATE-SOURCE 2.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 10 1.3 1.0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200