CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 75 Volts CHM80N75NPT CURRENT 80 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0.420(10.67) 0.190(4.83) 0.380(9.69) 0.160(4.06) 0.055(1.40) 0.245(6.22) 0.045(1.14) MIN. 0.320(8.13) 0.625(15.88) CONSTRUCTION * N-Channel Enhancement 0.575(14.60) 0.360(9.14) 3 0.055(1.40) 0.047(1.19) 1 3 2 0.110(2.79) 0.090(2.29) 0.100(2.54) 0.095(2.41) D (3) CIRCUIT 0.025(0.64) 0.037(0.940) 0.018(0.46) 0.027(0.686) 0.110(2.79) 0.080(2.03) 1 Gate 2 Source 3 Drain ( Heat Sink ) (1) G Dimensions in inches and (millimeters) S (2) Absolute Maximum Ratings Symbol VDSS VGSS D2PAK TA = 25°C unless otherwise noted Parameter CHM80N75NPT Units Drain-Source Voltage 75 V Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 80 ID A - Pulsed (Note 3) PD Maximum Power Dissipation at Tc = 25 °C TJ TSTG 320 200 W Operating Temperature Range -55 to 175 °C Storage Temperature Range -55 to 175 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2008-03 ELECTRICAL CHARACTERISTIC ( CHM80N75NPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 75 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS V 1 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA 4 V 13 mΩ (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=40A 10 g FS Forward Transconductance VDS =15V, ID = 40A 45 2 S Dynamic Characteristics Ciss 3550 Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 580 pF 40 SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q gd Gate-Drain Charge 79.3 VDS=60V, ID=75A 105.5 nC 20.6 VGS=10V 25.9 t on Turn-On Time V DD= 37.5V 24 48 tr Rise Time I D = 45A , VGS = 10 V 5 10 t off Turn-Off Time RGEN= 4.7 Ω 61 122 tf Fall Time 18 36 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 75A , VGS = 0 V (Note 1) (Note 2) 75 A 1.5 V RATING CHARACTERISTIC CURVES ( CHM80N75NPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 50 120 V G S =1 0 , 9 , 8 , 7 V 100 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) 40 VG S =6 . 0 V 30 20 VG S =5 . 0 V 10 75 50 TJ=-55°C 25 TJ=125°C 0 1.5 1.0 0.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 0 2.0 2.6 10 VGS=10V ID=3.9A 2.2 R DS(on) , NORMALIZED 8 6 4 2 0 0 15 30 45 60 Qg , TOTAL GATE CHARGE (nC) 75 90 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA THRESHOLD VOLTAGE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=60V ID=75A Vth , NORMALIZED GATE-SOURCE 5.0 Figure 4. On-Resistance Variation with Temperature Figure 3. Gate Charge 1.3 TJ=25°C 3.0 4.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 0 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200