JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-A Power Management MOSFETS-Schottky CJLJF3117P P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR ID/IO RDS(on)MAX DFNWB2×2-6L-A 100mΩ@-4.5V -20V -3.3A 135mΩ@-2.5V 250mΩ@-1.8V 30V 2A / FEATURE z APPLICATION z Optimized for Portable Applications Like Cell Independent Pinout to Each Device to Ease Circuit Design z Phones,Digital Cameras,Media Players,etc High Current Schottky Diode MARKING z DC-DC Buck Circuits z Li-ion Battery Applications z Color Display and Camera Flash Regulators Equivalent Circuit K G S 6 5 4 1 2 3 A D Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Para meter Value Unit P-MOSFET VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V Continuous Drain Current -3.3 A Pulse Drain Current -10 A Peak Repetitive Reverse Voltage 30 V VR DC Blocking Voltage 30 V IO Average Rectified Forward Current 2 A Power Dissipation 0.75 W Thermal Resistance from Junction to Ambient 83.3 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ ID IDM* Schottky Barrier Diode VRRM Power Dissipation, Temperature and Thermal Resistance PD RθJA *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 F,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit P-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250µA Zero gate voltage drain current IDSS VDS =-16V,VGS = 0V -1 µA Gate-body leakage current IGSS VGS =±8V, VDS = 0V ±100 nA -0.7 -1 V VGS =-4.5V, ID =-2A 58 100 mΩ VGS =-2.5V, ID =-2A 80 135 mΩ 120 250 mΩ -1 V Gate threshold voltage Drain-source on-resistance(note1) VGS(th) RDS(on) VDS =VGS, ID =-250µA -20 -0.4 VGS =-1.8V, ID =-1.6A Forward transconductance(note1) gFS VDS=-5V,ID=-2A Diode forward voltage(note1) VSD IS=-1A, VGS = 0V V 2.5 S DYNAMIC PARAMETERS (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 531 pF 91 pF Crss 56 pF td(on) 5.2 ns VGS=-4.5V,VDD=-5V, 13.2 ns RG=6Ω, ID=-1A 13.7 ns VDS =-10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf 19.1 Total Gate Charge Qg 5.5 ns Gate-Source Charge Qgs VDS =-10V,VGS =-4.5V, 1.0 nC Gate-Drain Charge Qgd ID =-2A 1.4 nC Gate Resistance Rg 8.8 Ω 6.2 nC SCHOTTKY BARRIER DIODE Forward voltage VF IF=0.1A 0.39 V IF=1A 0.55 V VR=30V 20 µA 8 µA 4.5 µA Reverse current IR VR=20V Junction capacitance Cj VR=5V,f=1MHz VR=10V 30 pF Note: 1.Pulse test: pulse width =300μs, duty cycle≤ 2% 2.These parameters have no way to verify. www.cj-elec.com 2 F,Aug,2015 7\SLFDO&KDUDFWHULVWLFV P-channel Characteristics Output Characteristics -10 Transfer Characteristics -10 VGS= -4.5V,-3.5V,-2.5V Ta=25℃ Ta=25℃ Pulsed Pulsed -8 -8 (A) VGS=-1.5V ID -4 -6 DRAIN CURRENT ID -6 DRAIN CURRENT (A) VGS=-2.0V -4 -2 -0 -2 VGS=-1.0V -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) 150 —— VDS -0 -0.0 -4 (V) -0.5 -1.0 -1.5 GATE TO SOURCE VOLTAGE ID RDS(ON) 250 Ta=25℃ —— -2.0 VGS -2.5 (V) VGS Ta=25℃ Pulsed Pulsed 200 (mΩ) 90 VGS=-4.5V 60 30 -0 -2 -4 -6 DRAIN CURRENT -10 -3 RDS(ON) VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) 120 IS —— ID -8 150 100 50 0 -10 (A) ID=-2.8A -0 -2 -4 GATE TO SOURCE VOLTAGE -6 VGS -8 (V) VSD Ta=25℃ Pulsed SOURCE CURRENT IS (A) -1 -0.3 -0.1 -0.03 -0.01 -3E-3 -1E-3 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.0 VSD -1.2 (V) 3 F,Aug,2015 7\SLFDO&KDUDFWHULVWLFV Schottky Characteristics Reverse Characteristics Forward Characteristics 2000 0.01 1000 (A) Ta=100℃ REVERSE CURRENT IR 100 FORWARD CURRENT IF (mA) Ta=100℃ 1E-3 10 Ta=25℃ 1 0.1 0.2 0.3 0.4 FORWARD VOLTAGE www.cj-elec.com 1E-5 Ta=25℃ 1E-6 0.1 0.01 0.0 1E-4 0.5 0.6 1E-7 0.7 0 5 10 15 REVERSE VOLTAGE VF (V) 4 20 VR 25 30 (V) F,Aug,2015 DFNWB2X2-6L-A Package Outline Dimensions N3 N4 N1 N6 DFNWB2X2-6L-A www.cj-elec.com 5 F,Aug,2015 DFNWB2X2-6L Tape and Reel www.cj-elec.com 6 F,Aug,2015