JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS CJMPD08 P-Channel Power MOSFET DFNWB2*2-6L-A General Description The CJMPD08 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. FEATURE z Low Profile for Easy Fit in Thin Environments z Bidirectional Current Folw with Common Source Configuration APPLICATIONS z Optimized for Battery and Load Management Applications in Portable Equipment z Li-Ion Battery Charging and Protection Circuits z High Power Management in Portable , Battery Powered Products z High Side Load Switch MARKING: front Tape Drawing (Unit : mm) back Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current(Note1a) ID -3.6 A Power Dissipation (Note1a) PD 1.4 W Power Dissipation (Note1b) PD 0.7 W RθJA 86 ℃/W V Thermal Resistance from Junction to Ambient (Note1a) C,Jun,2013 Thermal Resistance from Junction to Ambient (Note1b) RθJA 173 ℃/W Thermal Resistance from Junction to Ambient (Note1c) RθJA 69 ℃/W Thermal Resistance from Junction to Ambient(Note1d) RθJA 151 ℃/W Junction Temperature Tj 150 Storage Temperature Tstg -55 ~+150 ℃ Notes:1. RθJA is determined with the device mounted on a 1.5 x 1.5 in. PCB of FR-4 material. (a) when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) when mounted on a minimum pad of 2 oz copper. For single operation. (c) when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) when mounted on a minimum pad of 2 oz copper. For dual operation. Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit On/Off Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 VGS(th) VDS =VGS, ID =-250µA -0.4 Gate-threshold voltage -1 V Gate-body leakage current IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-16V, VGS =0V -1 µA VGS =-4.5V, ID =-3.6A 60 VGS =-2.5V, ID =-3A 80 VGS =-1.8V, ID =-2A 110 VGS =-1.5V, ID =-1A 170 Drain-source on-state resistance (Note 2) RDS(on) Forward transconductance (Note 2) gFS VDS =-10V, ID =-2.7A 5.5 mΩ S Charges , Capacitances and Gate resistance(Note3) Input capacitance Ciss 480 Output capacitance Coss Reverse transfer capacitance Crss 10 Total gate charge Qg 7.2 Gate-source charge Qgs Gate-drain charge Qgd 1.2 td(on) 38 VDS =-15V,VGS =0V,f =1MHz VDS =-4.5V,VGS =-6V,ID =-2.8A pF 46 nC 2.2 Switching times (Note3) Turn-on delay time Rise time Turn-off delay time Fall time tr VDS=-6V,ID=-2.8A, 25 td(off) VGS=-4.5V,RG=6Ω 43 tf ns 5 Source-drain diode characteristics Forward on voltage (Note2) VSD VGS =0V, IS=-1A -0.8 V Notes: 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. C,Jun,2013 CJMPD08 Typical Characteristics Transfer Characteristics Output Characteristics -5 5 VGS=-2.4V,-2.2V,-2V,-1.8V,-1.6V o Ta=25 C Pulsed 4 (A) (A) -4 ID ID VGS=-1.4V DRAIN CURRENT DRAIN CURRENT -3 -2 VGS=-1.2V -1 3 2 1 VGS=-1.0V -0 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE RDS(ON) —— VDS 0 -4 0 1 2 GATE TO SOURCE VOLTAGE (V) RDS(ON) —— ID 100 3 VGS (V) VGS 500 o o Ta=25 C Pulsed VGS=-1.8V 60 RDS(ON) (mΩ) 80 VGS=-2.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (mΩ) Ta=25 C Pulsed VGS=-4.5V 40 20 0 400 300 200 ID=-2.1A 100 0 1 2 DRAIN CURRENT 3 ID 4 5 (A) 0 0 2 4 GATE TO SOURCE VOLTAGE 6 VGS 8 (V) IS —— VSD SOURCE CURRENT IS (A) 5 1 o Ta=25 C Pulsed 0.1 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE 1.0 1.2 VSD (V) C,Jun,2013