JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD PDFN3.3×3.3-8L-A Plastic-Encapsulate MOSFETS CJAB25N03 N-Channel Power MOSFET DESCRIPTION PDFN3.3×3.3-8L-A The CJAB25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good heat dissipation High density cell design for ultra low RDS(ON) Special process technology for high ESD Fully characterized avalanche voltage and capability current APPLICATIONS SMPS and general purpose applications Hard switched and high frequency circuits MARKING Uninterruptible Power Supply EQUIVALENT CIRCUIT D CJAB25N03 = Part No. 8 D 7 D 6 D 5 Solid dot=Pin1 indicator XXX=Date Code 2 1 S 3 S 4 S G MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 25 A Pulsed Drain Current IDM 100 A 70 mJ PD 1.5 W RθJA 83.3 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55 ~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10s) TL 260 ℃ Single Pulsed Avalanche Energy EAS Power Dissipation Thermal Resistance from Junction to Ambient (1) (1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt www.cj-elec.com 1 A-2,Feb,2015 ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA Gate-body leakage current IGSS VDS =0V, VGS =±20V ±100 nA Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 3.0 V VGS =4.5V, ID =10A 14 mΩ Static drain-source on-sate resistance RDS(on) VGS =10V, ID =10A 10 mΩ Off characteristics Drain-source breakdown voltage 30 V On characteristics (note1) Forward transconductance gFS VDS =5V, ID =20A 1.0 15 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 1530 VDS =15V,VGS =0V, f =1MHz pF 250 198 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time 15 VDS=15V, VGS=10V, ID=9A nC 3 4.5 10 tr VDD=15V,ID=10A, 8 td(off) VGS=10V,RG=1.8Ω 30 tf ns 5 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=10A 1.2 V IS 25 A ISM 100 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 A-2,Feb,2015 TYPICAL CHARACTERISTICS Transfer Characteristics Output Characteristics 30 10V 30 VDS=5V Pulsed VGS= 5V Pulsed 25 25 (A) ID 20 DRAIN CURRENT DRAIN CURRENT ID (A) VGS= 4V VGS=3V 15 10 20 15 Ta=25℃ 10 5 5 VGS=2.5V 0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 5 0 1 (V) 2 Ta=25℃ (m) 16 7 6 RDS(ON) VGS=10V 5 ON-RESISTANCE (m) RDS(ON) ON-RESISTANCE Pulsed ID=10A 18 Pulsed 8 4 3 2 1 14 12 Ta=100℃ 10 8 6 Ta=25℃ 4 2 3 5 15 10 DRAIN CURRENT 20 ID 0 25 3 (A) 4 5 7 8 VGS 9 10 (V) Threshold Voltage IS —— VSD 2.5 Pulsed 2.0 VTH (V) 10 1 Ta=25℃ Ta=100℃ THRESHOLD VOLTAGE IS (A) 6 GATE TO SOURCE VOLTAGE 25 SOURCE CURRENT (V) 20 9 0.1 0.01 1E-3 VGS RDS(ON)—— VGS RDS(ON) —— ID 10 0 4 3 GATE TO SOURCE VOLTAGE 0 200 400 600 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 800 1000 1.0 0.5 0.0 25 1200 VSD (mV) ID=250uA 1.5 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) A-2,Feb,2015 H PDFN3.3x3.3-8L-A Package Outline Dimensions b L1 D L2 E2 L E E1 D1 e L3 Top View [顶视图] Bottom View [背视图 ] A1 A A1 A2 D D1 E E1 E2 b e L L1 L2 L3 H θ A A2 Symbol θ Side View [侧视图] Dimensions In Millimeters Min. Max. 0.650 0.850 0.152 REF. 0~0.05 2.900 3.100 2.540 2.740 2.900 3.100 3.150 3.450 1.365 1.765 0.200 0.400 0.550 0.750 0.260 0.460 0.165 0.465 0~0.100 0~0.100 0.300 0.500 9° 13° Dimensions In Inches Min. Max. 0.026 0.033 0.006 REF. 0~0.002 0.114 0.122 0.100 0.108 0.114 0.122 0.124 0.136 0.054 0.069 0.008 0.016 0.022 0.030 0.010 0.018 0.006 0.018 0~0.004 0~0.004 0.012 0.020 9° 13° PDFN3.3x3.3-8L-A Suggested Pad Layout Note: 1.Controlling dimension:in millimeters. 2.General tolerance:±0.05mm. 3.The pad layout is for reference purposes only. 0.60 0.55 2.25 2.80 0.65 0.40 NOTICE JCET reserve the right to make modifications,enhancements, improvements, corrections or other changes without further notice to any product herein.JCET does not assume any liability arising out of the application or use of any product described herein. www.cj-elec.com 4 A-2,Feb,2015 PDFN3.3 3.3-8L-A Tape and Reel www.cj-elec.com 5 A-2,Feb,2015