PDFN3.3×3.3-8L-A Plastic-Encapsulate MOSFETS CJAB25N03 N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN3.3×3.3-8L-A Plastic-Encapsulate MOSFETS
CJAB25N03
N-Channel Power MOSFET
DESCRIPTION
PDFN3.3×3.3-8L-A
The CJAB25N03 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES

Battery switch

Good stability and uniformity with high EAS

Load switch

Excellent package for good heat dissipation

High density cell design for ultra low RDS(ON)

Special process technology for high ESD

Fully characterized avalanche voltage and
capability
current
APPLICATIONS


SMPS and general purpose applications
 Hard switched and high frequency circuits
MARKING
Uninterruptible Power Supply
EQUIVALENT CIRCUIT
D
CJAB25N03 = Part No.
8
D
7
D
6
D
5
Solid dot=Pin1 indicator
XXX=Date Code
2
1
S
3
S
4
S
G
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
25
A
Pulsed Drain Current
IDM
100
A
70
mJ
PD
1.5
W
RθJA
83.3
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
Single Pulsed Avalanche Energy
EAS
Power Dissipation
Thermal Resistance from Junction to Ambient
(1)
(1).EAS condition: VDD=15V,L=0.14mH, RG=25Ω, Starting TJ = 25°C
(2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
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A-2,Feb,2015
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =30V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
3.0
V
VGS =4.5V, ID =10A
14
mΩ
Static drain-source on-sate resistance
RDS(on)
VGS =10V, ID =10A
10
mΩ
Off characteristics
Drain-source breakdown voltage
30
V
On characteristics (note1)
Forward transconductance
gFS
VDS =5V, ID =20A
1.0
15
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
1530
VDS =15V,VGS =0V,
f =1MHz
pF
250
198
Switching characteristics (note 2)
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
Turn-off fall time
15
VDS=15V, VGS=10V,
ID=9A
nC
3
4.5
10
tr
VDD=15V,ID=10A,
8
td(off)
VGS=10V,RG=1.8Ω
30
tf
ns
5
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
Pulsed drain-source diode forward current
VSD
VGS =0V, IS=10A
1.2
V
IS
25
A
ISM
100
A
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
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A-2,Feb,2015
TYPICAL CHARACTERISTICS
Transfer Characteristics
Output Characteristics
30
10V
30
VDS=5V
Pulsed
VGS= 5V
Pulsed
25
25
(A)
ID
20
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS= 4V
VGS=3V
15
10
20
15
Ta=25℃
10
5
5
VGS=2.5V
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0
5
0
1
(V)
2
Ta=25℃
(m)
16
7
6
RDS(ON)
VGS=10V
5
ON-RESISTANCE
(m)
RDS(ON)
ON-RESISTANCE
Pulsed
ID=10A
18
Pulsed
8
4
3
2
1
14
12
Ta=100℃
10
8
6
Ta=25℃
4
2
3
5
15
10
DRAIN CURRENT
20
ID
0
25
3
(A)
4
5
7
8
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
2.5
Pulsed
2.0
VTH
(V)
10
1
Ta=25℃
Ta=100℃
THRESHOLD VOLTAGE
IS (A)
6
GATE TO SOURCE VOLTAGE
25
SOURCE CURRENT
(V)
20
9
0.1
0.01
1E-3
VGS
RDS(ON)—— VGS
RDS(ON) —— ID
10
0
4
3
GATE TO SOURCE VOLTAGE
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
1.0
0.5
0.0
25
1200
VSD (mV)
ID=250uA
1.5
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
A-2,Feb,2015
H
PDFN3.3x3.3-8L-A Package Outline Dimensions
b
L1
D
L2
E2
L
E
E1
D1
e
L3
Top View
[顶视图]
Bottom View
[背视图 ]
A1
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
A
A2
Symbol
θ
Side View
[侧视图]
Dimensions In Millimeters
Min.
Max.
0.650
0.850
0.152 REF.
0~0.05
2.900
3.100
2.540
2.740
2.900
3.100
3.150
3.450
1.365
1.765
0.200
0.400
0.550
0.750
0.260
0.460
0.165
0.465
0~0.100
0~0.100
0.300
0.500
9°
13°
Dimensions In Inches
Min.
Max.
0.026
0.033
0.006 REF.
0~0.002
0.114
0.122
0.100
0.108
0.114
0.122
0.124
0.136
0.054
0.069
0.008
0.016
0.022
0.030
0.010
0.018
0.006
0.018
0~0.004
0~0.004
0.012
0.020
9°
13°
PDFN3.3x3.3-8L-A Suggested Pad Layout
Note:
1.Controlling dimension:in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.
0.60
0.55
2.25
2.80
0.65
0.40
NOTICE
JCET reserve the right to make modifications,enhancements, improvements, corrections or other changes
without further notice to any product herein.JCET does not assume any liability arising out of the application or use
of any product described herein.
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A-2,Feb,2015
PDFN3.3
3.3-8L-A Tape and Reel
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5
A-2,Feb,2015