TYSEMI FDS9926A

Product specification
FDS9926A
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
• 6.5 A, 20 V.
• Optimized for use in battery protection circuits
Applications
• ±10 VGSS allows for wide operating voltage range
• Battery protection
• Low gate charge
RDS(ON) = 0.030 Ω @ VGS = 4.5 V
RDS(ON) = 0.043 Ω @ VGS = 2.5 V.
• Load switch
• Power management
D1
D1
5
D2
6
D2
4
3
Q1
7
SO-8
S2
G2
S1
G1
Absolute Maximum Ratings
Symbol
8
2
Q2
1
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±10
V
ID
Drain Current
6.5
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
20
2
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
W
1.6
(Note 1b)
1
(Note 1c)
0.9
-55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9926A
FDS9926A
13’’
12mm
2500 units
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1
Product specification
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V
VDS = 0 V
–100
nA
1.5
V
On Characteristics
20
FDS9926A
Electrical Characteristics
V
14
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
ID(on)
On–State Drain Current
VGS = 4.5 V,
ID = 6.5 A
VGS = 2.5 V,
ID = 5.4 A
VGS= 4.5 V, ID =6.5A, TJ=125°C
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 3 A
11
S
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V,
700
pF
0.5
1
-3
0.025
0.036
0.035
mV/°C
0.030
0.043
0.050
15
Ω
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
175
pF
85
pF
(Note 2)
8
16
ns
10
18
ns
Turn–Off Delay Time
18
29
ns
Turn–Off Fall Time
5
10
ns
Qg
Total Gate Charge
7
10
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 10 V,
VGS = 4.5 V
ID = 3A,
1.2
nC
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.65
1.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°/W when
2
mounted on a 0.5in
pad of 2 oz copper
b) 125°/W when
mounted on a 0.02
2
in pad of 2 oz
copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1