SI2300 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 70m Ω 80m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S SOT-23(PACKAGE) A B C D E Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 F 0.45 REF. G H K J L Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 M 0° REF. 0.55 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 12 ID 2.3 IDM 8 Continuous Drain Current Pulsed Drain Current 1) o TA = 25 C Maximum Power Dissipation o TA = 75 C TJ, Tstg Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) PD 2) RθJA Unit V A 1.25 W 0.8 o -55 to 150 o 78 Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. -1- C C/W SI2300 ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Static Test Condition Symbol Min. Typ. Miax. Unit 3) Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250uA Drain-Source On-State Resistance RDS(on) VGS = 2.5V, ID = 2.0A 70.0 80.0 Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 3.0A 60.0 70.0 Gate Threshold Voltage VGS(th) VDS =VGS, ID = 250uA Zero Gate Voltage Drain Current 0 IDSS VDS = 20V, VGS = 0V Gate Body Leakage IGSS VGS = ± 12V, VDS = 0V gfs VDS = 5V, ID = 4..2A Forward Transconductance 20 0.6 V 0.76 mΩ V 1 uA ±100 nA S 5 4) Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, ID = 3.6A VGS = 4.5V 5.4 10 nC 0.65 . 1.5 12 25 VDD = 10V, RG = 6Ω 36 60 ID = 1A, 34 60 10 25 VGS = 4.5V RL = 5.5 Ω VDS = 10V, VGS = 0V f = 1.0 MHz ns 340 pF 115 33 Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.6A, VGS = 0V 1.6 A 1.2 V Notes 3) Short duration test pulse used to minimize self-heating effect. 4) Pulse test pulse width <=300us,duty cycle <= 2%. -2- SI2300 Output Characteristics 10 Transfer Characteristics 10 VGS = 5 thru 2.5 V 8 2V I D – Drain Current (A) I D – Drain Current (A) 8 6 4 2 TC = 125C 4 2 1.5 V 0, 0.5, 1 V 6 25C –55C 0 0 0 1 2 3 4 5 0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.15 1000 0.12 800 C – Capacitance (pF) r DS(on)– On-Resistance ( ) 1.5 VGS = 2.5 V 0.09 VGS = 4.5 V 0.06 0.03 600 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 10 0 ID – Drain Current (A) 1.8 1.6 4 r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 3.6 A 3 2 1 0 0 1 2 3 4 5 Qg – Total Gate Charge (nC) 8 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge 5 4 6 7 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.6 A 1.4 1.2 1.0 0.8 0.6 –50 0 50 100 TJ – Junction Temperature (C) -3- 150 SI2300 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) 10 TJ = 150C TJ = 25C 0.16 0.12 ID = 3.6 A 0.08 0.04 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD – Source-to-Drain Voltage (V) Threshold Voltage 0.1 12 10 ID = 250 mA –0.1 8 TC = 25C Single Pulse 6 –0.2 4 –0.3 2 –0.4 –50 0 0 50 100 150 0.01 0.10 TJ – Temperature (C) 1.00 10.00 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 8 Single Pulse Power 14 Power (W) V GS(th) Variance (V) 6 VGS – Gate-to-Source Voltage (V) 0.2 –0.0 4 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) -4-