JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SA966 TRANSISTOR (PNP) 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A Pc Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA , IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA ,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -30V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC= -500mA VCE(sat) IC= -1.5 A, IB= -0.03A -2 V Base-emitter voltage VBE IC= -500mA,VCE=-2V -1 V Transition frequency fT VCE= -2V, IC=-500mA Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz Collector-emitter saturation voltage 100 320 120 MHz 30 pF CLASSIFICATION OF hFE Rank Range O Y 100-200 160-320 A,Jun,2011