TO-92 Plastic-Encapsulate Transistors 2SA1980

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
2SA1980
Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
TO-92
FEATURES
z
Low Collector Saturation Voltage: VCE(sat) =-0.3V(Max.)
1. EMITTER
z
Low Output Capacitance : Cob =4pF (Typ.)
2. COLLECTOR
z
Complementary Pair with 2SC5343
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-150
mA
PC
Collector Power Dissipation
625
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-10μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-0.1
μA
Collector cut-off current
ICEO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-6V,IC=-2mA
VCE(sat)
Collector-emitter saturation voltage
fT
Transition frequency
70
IC=-100mA,IB=-10mA
-0.3
VCE=-10V,IC=-1mA
80
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Noise figure
NF
VCE=-6V,IC=-0.1mA,f=1KHZ,RS=10KΩ
CLASSIFICATION OF
Rank
Range
700
V
MHz
4
7
pF
10
dB
hFE
O
Y
G
L
70-140
120-240
200-400
300-700
A,May,2011