TO-220-3L Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
TIP120,121,122
Darlington TRANSISTOR
(NPN)
TIP125,126,127
Darlington TRANSISTOR
(PNP)
TO-220-3L
1.BASE
2.COLLECTOR
FEATURES
Medium Power Complementary Silicon Transistors
3.EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
Unit
VCBO
Collector-Base Voltage
60
80
100
V
VCEO
Collector-Emitter Voltage
60
80
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
5
A
PC
Collector Power Dissipation
2
W
RθJA
Thermal Resistance Junction to Ambient
62.5
℃/W
RθJc
Thermal Resistance Junction to Case
1.92
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Symbol
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
Test
conditions
V(BR)CBO
IC= 1mA,IE=0
VCEO(SUS)
IC= 30mA,IB=0
ICBO
ICEO
Min
Max
60
80
100
60
80
100
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
VCE=30 V, IB=0
VCE=40 V, IB=0
VCE=50 V, IB=0
Unit
V
V
0.2
mA
0.5
mA
IEBO
VEB=5 V, IC=0
hFE(1)
VCE= 3V, IC=0.5A
1000
hFE(2)
VCE= 3V, IC=3 A
1000
VCE(sat)
IC=3A,IB=12mA
IC=5 A,IB=20mA
2
4
V
VBE
VCE=3V, IC=3 A
2.5
V
300
200
pF
Cob
VCB=10V, IE=0,f=0.1MHz
2
mA
B,Aug,2012
Typical Characteristics
10000
-5
o
DC CURRENT GAIN
IC
-0.8mA
-0.7mA
-4
Ta=100 C
hFE
-1.0mA
(A)
VCE= -3V
COMMON
EMITTER
Ta=25℃
-0.9mA
COLLECTOR CURRENT
hFE —— IC
Static Characteristic
-6
-0.6mA
-3
-0.5mA
-2
-0.4mA
1000
o
Ta=25 C
100
-0.3mA
-1
IB=-0.2mA
-0
-0
-1
-2
-3
-4
-5
-6
COLLECTOR-EMITTER VOLTAGE
VCE
-7
10
-8
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
β=250
Ta=25℃
-1.4
-1.2
-1.0
-0.8
Ta=100℃
-0.6
-0.4
-100
COLLECTOR CURRENT
VCEsat ——
-1200
-1.8
-1.6
-10
(V)
VBEsat —— IC
-2.0
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
TIP126
IC
-5000
-1000
(mA)
IC
β=250
-1000
-800
Ta=25℃
-600
-400
Ta=100℃
-200
-0.2
-0.0
-1
-10
-100
-1000
COLLECTOR CURRENT
IC ——
IC
-0
-5000
-1
(mA)
VBE
250
Cob / Cib
——
-5000
-1000
IC
(mA)
VCB / VEB
f=1MHz
IE=0 / IC=0
(pF)
-1000
o
o
Ta=25 C
200
C
Ta=100 C
-100
CAPACITANCE
IC (mA)
-100
COLLECTOR CURRENT
-5000
COLLECTOR CURRENT
-10
-10
Ta=25℃
-1
150
100
Cob
Cib
50
VCE=-3V
-0.1
-0.0
-0.5
-1.0
-1.5
BASE-EMITTER VOLTAGE
Pc
COLLECTOR POWER DISSIPATION
Pc (W)
3
——
-2.0
0
-0.1
-1
REVERSE VOLTAGE
VBE(V)
-10
V
-20
(V)
Ta
2
1
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
B,Aug,2012