PTAC260302SC Thermally-Enhanced High Power RF LDMOS FET 30 W, 28 V, 2620 – 2690 MHz Description The PTAC260302SC is a 30-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. This device integrates a 10-W (main) and a 20-W (peak) transistor, making it ideal for asymmetric Doherty amplifier designs. Features include input matching, high gain and thermallyenhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTAC260302SC Package H-37248H-4 (formed leads) Features Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, 3GPP WCDMA signal, 10.3 dB PAR, 3.84 MHz bandwidth 55 2620 MHz 2655 MHz 2690 MHz -25 45 -30 35 Efficiency ACP Up ACP Low -35 -40 25 c260302sc_gr1 29 31 33 35 37 39 Drain Efficiency(%) ACP Up, ACP Low (dBc) -20 • Asymmetrical design • Input matching • Wide video bandwidth • Typical CW performance, 2690 MHz, 28 V (Doherty configuration) - Output power at P3dB = 31 W - Efficiency = 56% - Gain = 12 dB • Typical single-carrier WCDMA performance, 2690 MHz, 28 V (Doherty configuration) - Output power = 37.5 dBm avg - Gain = 15 dB - Efficiency = 45% - IMD = –29 dBc • Capable of handling 10:1 VSWR at 30 V, 30 W (CW) output power • Integrated ESD protection • Pb-free and RoHS compliant 15 41 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, VGS(Peak) = 1.2 V, IDQ = 85 mA, POUT = 5.4 W avg, ƒ = 2620, 2655, and 2690 MHz WCDMA signal: 3GPP, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Linear Gain Gps 14 15 — dB Drain Efficiency ηD 41 43 — % ACPR — –27.5 –25.5 dBc Adjacent Channel Power Ratio All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 µA VDS = 63 V, VGS = 0 V IDSS — — 10 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.8 — Ω On-State Resistance (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.6 — Ω Operating Gate Voltage (main) VDS = 28 V, IDQ = 0.085 A VGS — 2.7 — V Operating Gate Voltage (peak) VDS = 28 V, IDQ = 0 A VGS — 1.2 — V VGS = 10 V, VDS = 0 V IGSS — — 1 µA Gate Leakage Current Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 V TJ 200 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE 70°C, 30 W CW) RθJC 1.67 °C/W Junction Temperature Ordering Information Type and Version Order Code Package and Description Shipping PTAC260302SC V1 R250 PTAC260302SCV1R250XTMA1 H-37248H-4 – Ceramic open-cavity, earless flange, formed leads Tape & Reel, 250 pcs Data Sheet 2 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Typical Performance (data taken in an Infineon gull-wing applications circuit) CW Performance at selected VDD CW Performance VDD = 28 V, IDQ = 85 mA, series show frequency IDQ = 85 mA, ƒ = 2620 MHz 60 16 50 17 45 Gain 40 14 35 13 30 2620 MHz 2655 MHz 2690 MHz 12 11 10 c260302sc_gr2 30 32 34 36 38 40 42 44 Efficiency 50 16 15 40 14 35 13 30 25 12 20 11 15 10 VDD = 24 V VDD = 28 V VDD = 32 V 30 46 32 19 60 18 55 17 50 Gain 45 14 40 13 35 VDD = 24 V VDD = 28 V VDD = 32 V 10 c260302sc_gr4 34 36 38 40 42 44 Gain (dB) 16 65 Efficiency (%) Gain (dB) 17 32 38 40 42 44 15 46 60 VDD = 24 V VDD = 28 V VDD = 32 V 55 50 Efficiency 45 16 Gain 15 40 14 35 13 30 30 12 25 25 11 20 20 10 46 c260302sc_gr5 30 32 34 36 38 40 42 44 15 46 Output Power (dBm) Output Power (dBm) Data Sheet 36 IDQ = 85 mA, ƒ = 2690 MHz Efficiency 30 34 CW Performance at selected VDD 19 11 20 Output Power (dBm) IDQ = 85 mA, ƒ = 2655 MHz 12 25 c260302sc_gr3 CW Performance at selected VDD 15 45 Gain Output Power (dBm) 18 55 Efficiency (%) 15 18 Gain (dB) Gain (dB) 17 55 Efficiency (%) Efficiency 18 60 19 Efficiency (%) 19 3 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Typical Performance (cont.) Small Signal CW Performance Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2620 MHz 3GPP WCDMA signal, 3.84 MHz BW 15.0 -10 11 18 14.0 -12 13.5 -13 13.0 -14 12.5 -15 Gain 12.0 2490 -16 2820 2600 2655 2710 2765 9 16 Gain 15 14 7 13 6 c 260302sc_gr7 29 31 33 35 37 39 Single-carrier WCDMA Drive-up Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, ƒ = 2655 MHz 3GPP WCDMA signal, 3.84 MHz BW VDD = 28 V, IDQ = 85 mA, ƒ = 2690 MHz 3GPP WCDMA signal, 3.84 MHz BW 17 10 17 16 9 16 Gain 8 c260302sc_gr8 33 35 37 39 9 Gain 15 8 13 6 5 12 c260302s c_gr9 29 41 Average Output Power (dBm) Data Sheet 10 6 13 31 PAR @ 0.01% CCDF 7 7 29 11 14 14 12 Gain (dB) 18 PAR @ 0.01% CCDF OPAR (dB) 11 18 15 5 41 Average Output Power (dBm) Frequency (MHz) Gain (dB) 8 12 c 260302sc_gr6 2545 10 17 31 33 35 37 39 OPAR (dB) Gain (dB) -11 Gain (dB) IRL 14.5 Input Return Loss (dB) PAR @ 0.01% CCDF OPAR (dB) VDD = 28 V, IDQ = 85 mA 5 41 Average Output Power (dBm) 4 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Typical Performance (cont.) Single-carrier WCDMA Broadband Performance Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal VDD = 28 V, IDQ = 85 mA, POUT = 37.5 dBm, 3GPP WCDMA signal, 10.3 dB PAR 17 -8 -15 -10 -19 47 11 -14 9 -16 -23 43 ACP Up -27 41 -31 39 ACP Low OPAR 7 2580 -35 2580 -18 2730 c260302sc_gr10 2610 2640 2670 2700 Frequency (MHz) Data Sheet 45 Efficiency Efficiency (%) -12 IRL ACP R (dBc) 13 Input Return Loss (dB) Gain (dB), OPAR (dB) Gain 15 37 2730 c260302sc_gr11 2610 2640 2670 2700 Frequency (MHz) 5 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Load Pull Performance Z Source Z Load D S G G D Main Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 85 mA P1dB Max Output Power Zs Ω Freq [MHz] Zl Ω Gain [dB] POUT [dBm] Max PAE POUT [W] Zl Ω PAE % Gain [dB] POUT [dBm] POUT [W] PAE % 2620 25 – j29 9.3 – j14.4 19.5 42.23 16.7 59.1 5.5 – j11.9 21.3 40.89 12.3 65.2 2655 42 – j33 12.1 – j14.1 19.2 42.30 17.0 56.7 6.8 – j12.2 20.8 41.40 13.8 64.6 2690 44 – j35 11.9 – j15.0 20.1 42.03 16.0 56.5 7.1 – j12.0 21.8 41.03 12.7 62.7 Peak Side – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 115 mA P1dB Max Output Power Zs Ω Freq [MHz] Zl Ω Gain [dB] POUT [dBm] Max PAE POUT [W] PAE % Zl Ω Gain [dB] POUT [dBm] POUT [W] PAE % 2620 36 – j41 10.5 – j17.4 19.1 42.23 21.5 55.7 6.5 – j13.7 20.8 42.02 15.9 62.5 2655 43 – j31 10.7 – j17.5 18.7 42.30 21.5 55.2 6.3 – j15.8 20.2 42.39 17.3 61.2 2690 55 – j33 11.9 – j18.9 18.9 42.03 20.6 53.0 6.9 – j16.0 20.5 42.15 16.4 59.5 Reference Circuit, tuned for 2690 MHz DUT PTAC260302SC Reference Fixture Part No. LTA/PTAC260302SC V1 PCB Rogers 4350, 0.762 mm [.030"] thick, 2 oz. copper, εr = 3.66 Find Gerber files for this test fixture on the Infineon Web site at (http://www.infineon.com/rfpower) Data Sheet 6 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Reference Circuit (cont.) R04350, 030 (61) OUT_01 R04350 030 (105) C203 C104 VDD VGSpeak C105 R101 C205 C103 C204 R106 C208 C101 RF_IN C106 R105 PTAC260302SC R103 C207 RF_OUT S1 R104 R107 C202 R102 VGSmain C108 C201 C206 C107 VDD C102 PTAC260302S_D PTAC260302S_D_IN_02 c260302sc_cd_3-28- 13 Reference circuit assembly diagram (not to scale) Component Information Component Description Suggested Manufacturer P/N Input C101, C103, C106, C107 Chip capacitor, 10 pF ATC ATC100A100JW150XB C102, C104 Capacitor, 10 µF, 50 V pF Panasonic Electronic Components EEV-HD1H100P C105, C108 Chip capacitor, 1 µF Murata Electronics GRM21BR71H105KA12L R102 Resistor, 1 k Ohm Panasonic Electronic Components ERJ-8GEYJ102V R103 Resistor, 50 Ohm Anaren C16A50Z4 R104, R105, R106, R107 Resistor, 10 Ohm Panasonic Electronic Components ERJ-3GEYJ100V S1 Hybrid Coupler Anaren X3C25P1_05S C201, C203 Capacitor, 100 µF, 35 V pF Panasonic Electronic Components EEE-FP1V101AP C202, C204 Capacitor, 10 pF Taiyo Yuden UMK325C7106MM-T C205, C206, C207, C208 Chip capacitor, 10 pF ATC ATC100A100JW150XB Output Data Sheet 7 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Pinout Diagram (top view) Peak G1 D1 Pin D1 D2 G1 G2 S Main G2 D2 Description Drain Peak Drain Main Gate Peak Gate Main Source h - x x2 4 8 - h g f- 4 _ D_ p d - a _ 3 - 2 8 - 1 3 S (flange) Lead connections for PTAC260302SC Data Sheet 8 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC Package Outline Specifications Package H-37248H-4 (formed leads) >@ ;'[ >@ ' > @ ' >@ &/ * ;5 > 5 @ >@ >@ * &/ ; >@ ; ; >@63+ ; >@ >@ >@ &/ >@ >@ ++B*:BSRBB >@ 6 Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. (Find the latest and most complete information about products and packaging at the Infineon Internet page (http://www.infineon.com/rfpower ) Data Sheet 9 of 10 Rev. 02.1, 2013-08-28 PTAC260302SC V1 Revision History: Previous Version: Page 2 2013-08-28 2012-04-08, Data Sheet Subjects (major changes since last revision) Product Type updated. Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-08-28 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 02.1, 2013-08-28