Infineon-RFP Product Selection Guide

RF power product selection guide
LDMOS & GaN transistors and ICs
www.infineon.com/rfpower
RF power product selection guide
New products
GTVA126001FC
1200–1400 MHz
Typical pulsed CW
performance @ 1300 MHz
–– P3dB = 610 W
–– Gain = 18 dB
–– Efficiency = 70%
–– Pulse = 300 µs, 10% DC
H-37248-2
GTVA123501FA
1200–1400 MHz
Typical pulsed CW
performance @1300 MHz
–– P3dB = 370 W
–– Gain = 18 dB
–– Efficiency = 72%
–– Pulse = 300 µs, 10% DC
H-37265J-2
GTVA261701FA
2620–2690 MHz
Typical single-carrier WCDMA
performance
–– P1dB = 170 W avg
–– Gain = 17 dB
–– Efficiency = 43%
H-37265J-2
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For additional information contact us at [email protected], and on the web at
www.infineon.com/rfpower.
Cellular infrastructure LDMOS RF power transistors [400 MHz to 2700 MHz]
Product
Operating
frequency
[MHz]
Matching
P1dB
typ
[W]
Gain
typ
[dB]
Eff
typ
[%]
POUT
avg
[W]
Test
signal
Supply
voltage
typ [V]
RqJC
[°C/W]
Package
type
420 MHz to 960 MHz
PTFB072707FH
728–768
I/O
270
18.5
39.0
60
WCDMA
28
0.17
H-34288-4/2
PTFA080551E
869–960
I
75
18.0
44.0
26
EDGE
28
0.80
H-36265-2
PTFA080551F
869–960
I
75
18.0
44.0
26
EDGE
28
0.80
H-37265-2
PTFB090901EA
920–960
I/O
90
19.5
40.0
25
WCDMA
28
0.73
H-36265-2
PTFB090901FA
920–960
I/O
90
19.5
40.0
25
WCDMA
28
0.73
H-37265-2
PTFA091201E
920–960
I/O
135
19.0
44.0
50
EDGE
28
0.41
H-36248-2
PTFB091507FH
920–960
I/O
150
20.0
38.0
50
WCDMA
28
0.31
H-34288-4/2
PTFB091802FC
920–960
I/O
180
19.5
34.0
55
WCDMA
28
0.38
H-37248-4
PTFA092201E
920–960
I/O
250
18.5
30.0
55
WCDMA
30
0.25
H-36260-2
PTFB092707FH
925–960
I/O
270
19.5
33.0
63
WCDMA
28
0.21
H-37288L-4/2
NEW PTRA093302FC
746–768
I
330
17.3
51.6
79
WCDMA
50
0.56
H-37248-4
PTFB093608FV
920–960
I/O
2x180
20.0
34.0
112
WCDMA
28
0.12
H-34275G-6/2
1800 MHz to 2000 MHz
PXAC180602MD
1805–1880
I/O
60
17.7
54.5
8.9
WCDMA
28
2.40
PG-HB1DSO-4
NEW PXAD182002ND
1805–1880
I/O
100
16.5
46.0
27.5
WCDMA
28
TBD
PG-HB1DSO-4
PXFC191507FC
1805–1990
I/O
150
20.5
31.0
32
WCDMA
28
0.43
H-37248G-4/2
PTFB181702FC
1805–1880
I/O
180
19.0
26.0
30
WCDMA
28
0.27
H-37248-4
PXAC182002FC
1805–1880
I/O
180
16.7
51.5
28.2
WCDMA
28
1.09/0.59 H-37248-4
PTAB182002FC
1805–1880
I/O
70+120
15.5
44.0
29
WCDMA
28
0.86/0.64 H-37248-4
PXFC192207FH
1805–1990
I/O
220
20.0
29.0
50
WCDMA
28
0.28
H-37288G-4/2
PXFC192207SH
1805–1990
I/O
220
20.0
30.5
50
WCDMA
28
0.28
H-37288G-4/2
PXFC192207NF
1805–1990
I/O
220
18.7
30.3
50
WCDMA
28
0.18
PG-HBSOF-4
PTFB182503EL
1805–1880
I/O
240
19.0
28.0
50
WCDMA
30
0.26
H-33288-6
PTFB182503FL
1805–1880
I/O
240
19.0
28.0
50
WCDMA
30
0.26
H-34288-4/2
PTFB192503EL
1930–1990
I/O
240
19.0
28.0
50
WCDMA
30
0.26
H-33288-6
PTFB192503FL
1930–1990
I/O
240
19.0
28.0
50
WCDMA
30
0.26
H-34288-4/2
Cellular infrastructure LDMOS RF power transistors [400 MHz to 2700 MHz] (continued)
Product
Operating
frequency
[MHz]
Matching
P1dB
typ
[W]
Gain
typ
[dB]
Eff
typ
[%]
POUT
avg
[W]
Test
signal
Supply
voltage
typ [V]
RqJC
[°C/W]
Package
type
1800 MHz to 2000 MHz
PXAC182908FV
1805–1880
I/O
240
15.0
51.0
70
WCDMA
28
PXAC192908FV
1930–1995
I/O
240
14.0
49.0
70
WCDMA
28
0.56/0.29 H-37275G-6/2
0.32
H-37275G-6/2
PTFB182557SH
1805–1880
I/O
250
19.0
32.5
60
WCDMA
28
0.23
H-34288G-4/2
PTFB183404E
1805–1880
I/O
340
17.0
25.5
80
WCDMA
30
0.20
H-36275-8
PTFB183408SV
1805–1880
I/O
340
17.0
25.5
80
WCDMA
30
0.20
H-37275G-6/2
2000 MHz to 2200 MHz
PTFC210202FC
2110–2170
I/O
2x12
21.0
29.0
5
WCDMA
28
2.20
H-37248-4
NEW PXAC210552FC
1805-2170
I/O
55
17.2
49.0
8
WCDMA
28
1.44
H-37248-4
NEW PXAC210552MD
1800–2200
I/O
55
17.1
47.3
8.5
WCDMA
27
TBD
HB1DSO-4
PTAC210802FC
2110–2170
I/O
19+60
17.0
43.0
5
WCDMA
28
2.50/0.80 H-37248-4
PTFB210801FA
2110–2170
I/O
80
18.5
31.0
20
WCDMA
28
NEW PXAC200902FC
1805-2170
I/O
90
17.2
50.3
15
WCDMA
28
0.50
H-37265-2
PXAC201202FC
1800–2200
I/O
35+80
16.7
46.0
16
WCDMA
28
0.50
H-37248-4
PXAC201602FC
1880–2025
I/O
55+85
17.7
44.0
22
WCDMA
28
0.48
H-37248-4
PTFB201402FC
2010–2025
I/O
2x70
17.0
36.0
20
WCDMA
28
0.39
H-37248-4
PTFB211501E
2110–2170
I/O
150
18.0
32.0
40
WCDMA
30
0.29
H-36248-2
PTFB211501F
2110–2170
I/O
150
18.0
32.0
40
WCDMA
30
0.29
H-37248-2
PTFB211503EL
2110–2170
I/O
150
18.0
29.0
32
WCDMA
30
0.27
H-33288-6
PTFB211503FL
2110–2170
I/O
150
18.0
29.0
32
WCDMA
30
0.27
H-34288-4/2
PXFC211507SC
2110–2170
I/O
150
20.4
32.9
32
WCDMA
28
0.56
H-37248G-4/2
PTFB211803EL
2110–2170
I/O
180
17.5
29.5
40
WCDMA
30
0.30
H-33288-6
PTFB211803FL
2110–2170
I/O
180
17.5
29.5
40
WCDMA
30
0.30
H-34288-4/2
PTFB212507SH
2110–2170
I/O
200
18.0
26.0
50
WCDMA
28
0.26
H-34288G-4/2
PTFB212503EL
2110–2170
I/O
240
18.0
31.0
55
WCDMA
30
0.26
H-33288-6
PTFB212503FL
2110–2170
I/O
240
18.0
31.0
55
WCDMA
30
0.26
H-34288-4/2
PXFC212551SC
2110–2170
I/O
240
20.0
28.0
50
WCDMA
28
0.32
H-37248H-2
PTFB213004F
2110–2170
I/O
300
18.0
26.5
60
WCDMA
30
0.23
H-37275-6/2
PTFB213208FV
2110–2170
I/O
2x160
17.0
33.0
50
WCDMA
28
0.21
H-37275-6/2
PTFB213208SV
2110–2170
I/O
2x160
17.0
33.0
50
WCDMA
28
0.21
H-37275G-6/2
NEW PXAC213308FV
2110–2200
I/O
320
16.5
43.5
55
WCDMA
28
0.50/0.24 H-37275G-6/2
PXAC203302FV
1880–2025
I/O
330
16.5
49.0
56
WCDMA
28
0.62/0.35 H-37275-4
1.75/0.76 H-37248-4
2300 MHz to 2400 MHz
PTAC240502FC
2300–2400
I
17+33
14.3
44.0
10
WCDMA
28
1.29
H-37248-4
PXAC241702FC
2300–2400
I/O
60+90
16.5
52.0
28
WCDMA
28
0.53
H-37248-4
PTFB241402F
2300–2400
I/O
2x70
17.0
37.0
110
(PEP)
Twotone
30
0.38
H-37248-4
PXAC243502FV
2300–2400
I/O
150+200
15.5
44.0
68
WCDMA
28
0.22
H-37275-4
2.20
H-37248-4
2500 MHz to 2700 MHz
PTFC260202FC
2495–2690
I/O
2x12
20.0
30.0
5
WCDMA
28
PTAC260302FC
2620–2690
I/O
12+17
15.5
45.0
5.5
WCDMA
28
PTFC260362SC
2496–2690
I/O
2x17
18.6
30.0
8
WCDMA
28
PXAC260602FC
2620–2690
I/O
15+50
15.7
39.0
5
WCDMA
28
4.10/2.00 H-37248-4
PXAC260622SC
2496–2690
I/O
75
15.8
44.7
8.9
WCDMA
28
0.97/0.50 H-37248H-4
PXAC261002FC
2496–2690
I/O
40+70
15.6
46.0
18
WCDMA
28
0.60
H-37248-4
PXAC261212FC
2496–2690
I/O
50+75
15.0
48.0
28
WCDMA
28
0.61
H-37248-4
PTFC261402FC
2620–2690
I/O
140
18.0
25.0
5
WCDMA
28
0.30
H-37248-4
PTFC262157FH
2620–2690
I/O
200
19.5
29.0
50
WCDMA
28
0.34
H-34288G-4/2
PTFC262157SH
2620–2690
I/O
200
19.5
29.0
50
WCDMA
28
0.34
H-34288G-4/2
PTFC262808FV
2620–2690
I/O
280
18.0
24.0
56
WCDMA
28
0.20
H-37275G-6/2
1.50/1.70 H-37248H-4
2.51
H-37248H-4
Cellular infrastructure GaN RF transistors [1800 MHz to 2700 MHz]
Product
Operating
frequency
[MHz]
Matching
P1dB
typ [W]
Gain
typ
[dB]
Eff
typ
[%]
POUT
avg
[W]
Test
signal
Supply
voltage
typ [V]
[°C/W]
I
70 @P3dB
22.0
27.0
6.3
LTE
50
2.36
H-37265J-2
RqJC
Package
type
1800 MHz – 2200 MHz
NEW GTVA220701FA
1805–2170
2500 MHz – 2700 MHz
NEW GTVA261701FA
2620–2690
I
170 @P3dB
17.0
43.0
40
WCDMA
50
1.07
H-37265J-2
NEW GTVA263202FC
2620–2690
I
340 @P3dB
18.0
40.0
100
WCDMA
48
TBD
H-37265J-2
General purpose LDMOS RF transistors [700 MHz to 2200 MHz]
PTFA220041M
700–2200
No
5
19.0
37.5
4
(PEP)
Two-tone
28
5.50
SON-10
PTFA220121M
700–2200
No
15
16.0
37.0
9
(PEP)
Two-tone
28
3.40
SON-10
PTFC270051M
900–2700
No
7.3
20.0
60.0
–
CW@2170
28
3.84
SON-10
PTFC270101M
900–2700
No
12
20.0
60.0
–
CW@2140
28
4.04
SON-10
PTVA120121M
500–1400
No
12
21.0
65.0
15
CW
50
4.97
SON-10
PTVA120252MT
500–1400
No
25
20.8
33.0
5.5
CW
50
2.6
SON-16
LDMOS integrated RF power amplifiers [700 MHz to 2200 MHz]
PTMA080152M
700–1000
I
20
30.0
34.0
8
GSM/EDGE
28
8.50/2.50 DSO-20-63
PTMA180402M
1800–2200
I
40
30.0
16.0
5
CDMA
28
3.60/1.50 DSO-20-63
NEW PTMA210152M
1800–2200
I
20
28.5
33.0
7
WCDMA
28
10.70/2.90 DSO-20-63
I/O
10+10
30.5
19.0
2.5
WCDMA
28
9.70/3.10
HB1DSO-14
NEW PTMC210204MD 1805–2200
UHF and L-Band LDMOS RF power transistors [400 MHz to 1400 MHz]
PTVA030121EA
390–450
No
12
25.0
69.0
–
Pulsed
50
6.50
H-36265-2
PTVA035002EV
390–450
No
400
19.5
65.0
–
Pulsed
50
0.20
H-36275-4
PTVA042502EC
470–806
I
250
19.0
25.5
55
DVB-T
50
0.47
H-36248-4
PTVA042502FC
470–806
I
250
19.0
25.5
55
DVB-T
50
0.47
H-37248-4
PTVA043502EC
470–860
I/O
350
18.0
29.5
70
DVB-T
50
TBD
H-36248-4
PTVA043502FC
470–860
I/O
350
18.0
29.5
70
DVB-T
50
TBD
H-37248-4
PTVA047002EV
470–806
I
700
17.5
29.0
130
DVB-T
50
0.22
H-36275-4
PTVA104501EH
960–1215
I/O
450
17.0
57.0
–
Pulsed
50
0.34
H-36288-2
PTVA102001EA
1030/1090
I/O
200
18.0
57.0
–
Pulsed
50
TBD
H-36265-2
PTVA101K02EV
1030/1090
I
920
18.0
56.0
–
Pulsed
50
0.15
H-36275-4
PTVA120251EA
500–1400
No
30
16.0
56.0
–
Pulsed
50
3.70
H-36265-2
NEW PTVA120252MT
500–1400
No
25
20.8
33.0
5.5
CW
50
2.6
PG-SON-16
PTVA120501EA
1200–1400
I
54
16.5
55.0
–
Pulsed
50
3.70
H-36265-2
PTVA123501EC
1200–1400
I/O
375
17.0
55.0
–
Pulsed
50
0.34
H-36248-2
PTVA123501FC
1200–1400
I/O
375
17.0
55.0
–
Pulsed
50
0.34
H-37248-2
PTVA127002EV
1200–1400
I/O
700
16.0
56.0
–
Pulsed
50
0.34
H-36275-4
L-Band GaN RF transistors [960 MHz to 1400 MHz]
NEW GTVA104001FA
960–1215
I
410 @P3dB
18.5
70.0
–
Pulsed
50
TBD
H-37265J-2
NEW GTVA107001FC
960–1215
I
750 @P3dB
17.0
70.0
–
Pulsed
50
TBD
H-37248-2
NEW GTVA126001FC
1200–1400
I
610 @P3dB
18.0
70.0
–
Pulsed
50
TBD
H-37248-2
NEW GTVA123501FA
1200–1400
I
370 @P3dB
18.0
72.0
–
Pulsed
50
TBD
H-37265J-2
Packages
Thermally-enhanced open-cavity ceramic
H-36248-2
H-37248-2
H-36248-4
H-37248-4
H-37248H-4
H-37248H-4 or
H-44248H-4 or
H-49248H-4
(formed leads)
H-37248G-4/2
H-33265-8
H-34265-8
H-36265-2
H-37265-2 or
H-37265J-2
H-36260-2
H-37260-2
H-33288-2
H-34288-2
H-34288G-4/2 or
H-37288G-4/2 or
H-37288L-4/2
H-34288G-4/2 or
H-37288G-4/2
(formed leads)
H-33288-6
H-34288-4/2
H-36275-4
H-37275-4
H-37275-6/2
H-34275G-6/2 or
H-37275G-6/2
H-34275G-6/2 or
H-37275G-6/2
(formed leads)
Molded plastic
DSO-20-63
SON-10
HBSOF-4
HB1DSO-4
Where to buy
Infineon distribution partners and sales offices:
www.infineon.com/WhereToBuy
Service hotline
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Order number: B154-I0022-V5-7600-AP-EC-P
Date: 05 / 2016
www.infineon.com