LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS *FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING1 TO-78 *SOT-23 2mV SOT-23 TOP VIEW TOP VIEW 3µV/°C B1 E2 B2 ABSOLUTE MAXIMUM RATINGS2 @ 25 °C (unless otherwise stated) 1 6 2 5 3 4 TOP VIEW C1 E1 C2 Maximum Temperatures Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C TO-71 PDIP SOIC TOP VIEW TOP VIEW TOP VIEW Continuous Power Dissipation TBD Maximum Currents Collector Current SOIC PDIP Maximum Power Dissipation 50mA C1 1 8 C2 C1 1 8 C2 B1 2 7 B2 B1 2 7 B2 E1 3 6 E2 E1 3 6 E2 NC 4 5 NC NC 4 5 NC Maximum Voltages Collector to Collector Voltage 50V MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS3250A LS3250B LS3250C SYMBOL CHARACTERISTIC VBE1 VBE2 Base to Emitter Voltage Differential 2 5 10 mV IC = 10µA , VCE = 5V VBE1 VBE2 Base to Emitter Voltage Differential Change with Temperature 3 5 15 µV/°C IC = 10µA , VCE = 5V TA = -40°C to +85°C Base Current Differential 10 10 10 nA IC = 10µA, VCE = 5V Base Current Differential Change with Temperature 0.5 0.5 1.0 nA/°C IC = 10µA, VCE = 5V TA = -40°C to +85°C Current Gain Differential 10 10 15 % IC = 1mA, VCE = 5V ΔT IB1 IB2 IB1 IB2 ΔT hFE1 hFE2 MIN MAX MIN MAX MIN MAX UNIT CONDITIONS ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS3250A MIN MAX LS3250B MIN MAX LS3250C MIN MAX UNIT CONDITIONS BVCBO Collector to Base Breakdown Voltage 45 40 20 IC = 10µA , IE = 0A BVCEO 40 20 IC = 10mA, IB = 0 ±50 ±50 BVEBO Collector to Emitter Breakdown Voltage 45 Collector to Collector Breakdown ±50 Voltage Emitter to Base Breakdown Voltage3 6.0 6.0 6.0 VCE(SAT) Collector to Emitter Saturation Voltage BVCCO Linear Integrated Systems 0.35 • 0.35 V IC = ±1µA, IE = IB= 0A IE = 10µA, IC = 0A 1.2 IC = 10mA, IB = 1mA 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201128 05/15/2014 Rev#A5 ECN# LS 3250 ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated) SYMBOL LS3250A CHARACTERISTIC MIN MAX LS3250B MIN 150 hFE DC Current Gain 150 650 125 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC1C2 COBO fT LS3250C MIN IC = 1mA, VCE = 5V 80 40 IC = 10mA, VCE = 5V 30 IC = 35mA, VCE = 5V 60 0.35 IE = 0A, VCB = 30V nA 0.35 0.35 Collector to Collector Leakage Current ±1 ±1 ±1 µA VCC = ±50V, IE = IB= 0A Output Capacitance 2 2 2 pF IE = 0A, VCB = 10V 600 600 600 MHz IC = 1mA, VCE = 5V 3 3 3 dB IE = 0A, VCB = 3V PDIP PDIP 0.060 1 6 2 5 3 4 IC = 100µA, VCE = 5V BW = 200Hz RB = 10Ω, f = 1kHz TO-78 TO-71 0.95 * IE = 0A, VCB = 20V 0.35 SOT-23 SOT-23 1.90 CONDITIONS 50 0.2 Noise Figure (Narrow Band) 0.90 1.30 UNIT MAX 100 0.35 Gain Bandwidth Product (Current) NF MAX 0.35 0.50 1 8 2 7 3 6 4 5 0.100 0.375 2.80 3.00 0.038 0.210 0.170 0.250 1.50 1.75 2.60 3.00 0.145 0.170 0.09 0.20 0.295 0.320 DIMENSIONS IN INCHES SOIC SOIC 0.00 0.15 0.10 0.60 0.014 0.018 DIMENSIONS IN MILLIMETERS 0.021 1 8 2 7 3 6 4 5 0.150 0.157 *Standard package is SOT-23 6 lead. Other packages listed are optional. Contact factory regarding availability of optional packages. 0.0075 0.0098 0.050 0.189 0.196 0.0040 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES NOTES 1. Maximum rating for LS3250A, SOT23-6. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. 3. The reverse Base to Emitter voltage must never exceed 6.0 Volts. The reverse Base to Emitter current must never exceed 10µA. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201128 05/15/2014 Rev#A5 ECN# LS 3250