U421, U422, U423, U424, U425, U426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µS MIN LOW POWER OPERATION VGS(off)=2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Transistor NOTE 1 -VGSS Gate Voltage to Drain or Source 40V -VDSO Drain to Source Voltage IG(f) Case & Substrate 40V Gate Forward Current Top View TO-78 Top View SOIC 10mA Maximum Power Dissipation 2 Total Device Dissipation TA = 25ºC 500 mW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC │∆VGS1-2/∆T│max. │VGS1-2│max. 3 U421 U422 U423 U424 U425 U426 UNITS CONDITIONS Drift vs. Temperature 10 25 40 10 25 40 µV/ºC Offset Voltage 10 15 25 10 15 25 mV VDG =10V ID = 30µA Max -2.0 -2.0 -2.0 -3.0 -3.0 -3.0 V VDS=10V ID=1nA Min -0.4 -0.4 -0.4 -0.4 -0.4 -0.4 Max VDG = 10V ID = 30µA TA = -55ºC to +125ºC GATE VOLTAGE VGS(off) Pinchoff Voltage VGS Operating Range -1.8 -1.8 -1.8 -2.9 -2.9 -2.9 V VDS=10V ID=30µA IGmax. Operating -.25 -.25 -.25 -.500 -.500 -.500 pA VDS=10V ID=30µA IGmax. High Temperature -250 -250 -250 -500 -500 -500 pA TA=+125ºC IGSSmax. Gate Reverse Current -1.0 -1.0 -1.0 -3.0 -3.0 -3.0 pA VDS=0V IGSSmax. Gate Reverse Current 1.0 1.0 1.0 3.0 3.0 3.0 nA TA=+125ºC SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS BVGSS Breakdown Voltage -40 -60 -- V VDS= 0V IG= -1nA BVGGO Gate-to-Gate Breakdown ±40 -- -- V IG1G2= ±1µA ID= 0A IS= 0A VGS=-20V CONDITIONS TRANSCONDUCTANCE gfs Full Conduction 300 -- 1500 µS VDS= 10V VGS= 0 f = 1kHz gfs Typical Operation 120 200 350 µS VDG= 10V ID= 30µA f = 1kHz DRAIN CURRENT 60 -- 1000 µA U421-3 VDS= 10V VGS= 0 Full Conduction 60 -- 1800 µA U424-6 IDSS Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 6/04/2012 Rev#A9 ECN# U421 U422 U423 U424 U425 U426 SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS OUTPUT CONDUCTANCE gos Full Conduction -- -- 10 µS VDS= 10V VGS= 0 gos Operating -- 0.1 3.0 µS VDG= 10V ID= 30µA COMMON MODE REJECTION CMRR -20 log │V GS1-2/ΔVDS│ -- 90 -- dB ΔVDS= 10 to 20V ID=30µA CMRR -20 log │V GS1-2/ΔVDS│ -- 90 -- dB ΔVDS= 5 to 10V ID=30µA -- -- 1.0 dB VDG= 10V, ID= 30µA, RG=10MΩ NOISE NF Figure f= 10Hz en Voltage -- 20 70 nV/√Hz 10 VDG= 10V ID= 30µA f= 10Hz VDG= 10V ID= 30µA f= 1kHz CAPACITANCE CISS Input -- -- 3.0 pF VDS= 10V VGS= 0 f= 1MHz CRSS Reverse Transfer -- -- 1.5 pF VDS= 10V VGS= 0 f= 1MHz 0.210 0.170 4 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. Derate 4mW/ºC above 25ºC 3. All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 6/04/2012 Rev#A9 ECN# U421 U422 U423 U424 U425 U426