IT120A IT120 IT121 IT122 MONOLITHIC DUAL

IT120A IT120 IT121 IT122
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
Direct Replacement for Intersil IT120 Series
Pin for Pin Compatible
C1
C2
ABSOLUTE MAXIMUM RATINGS NOTE 1
(TA= 25°C unless otherwise noted)
IC
Collector-Current
10mA
Maximum Temperatures
Storage Temperature Range
-65°C to +150°C
Operating Temperature Range
-55°C to +150°C
Maximum Power Dissipation
ONE SIDE
E1
B1
E2
B2
BOTH SIDES
Device Dissipation TA=25°C
250mW
500mW
Linear Derating Factor
2.3mW/°C
4.3W/°C
TOP VIEW
26 X 29 MILS
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted)
SYMBOL CHARACTERISTIC
IT120A IT120 IT121 IT122
UNITS CONDITIONS
BVCBO
Collector to Base Voltage
45
45
45
45
MIN.
V
IC = 10µA
IE = 0A
BVCEO
Collector to Emitter Voltage
45
45
45
45
MIN.
V
IC = 10µA
IB = 0A
BVEBO
Emitter-Base Breakdown Voltage
6.2
6.2
6.2
6.2
MIN.
V
IE = 10µA
IC = 0A NOTE 2
BVCCO
Collector to Collector Voltage
60
60
60
60
MIN.
V
ICCO = 10µA IB = IE = 0A
hFE
DC Current Gain
200
200
80
80
MIN.
225
225
100
100
MIN.
VCE(SAT)
Collector Saturation Voltage
0.5
0.5
0.5
0.5
MAX.
V
IEBO
Emitter Cutoff Current
1
1
1
1
MAX.
ICBO
Collector Cutoff Current
1
1
1
1
MAX.
2
2
2
2
MAX.
2
2
COBO
3
Output Capacitance
3
IC = 10µA
VCE = 5V
IC = 1.0mA
VCE = 5V
IC = 0.5mA
IB = 0.05mA
nA
IC = 0
VEB = 3V
nA
IE = 0
VCB = 45V
pF
IE = 0
VCB = 5V
CC1C2
Collector to Collector Capacitance
2
2
MAX.
pF
VCC = 0
IC1C2
Collector to Collector Leakage Current
±500
±500 ±500 ±500 MAX.
nA
VCCO = ±60V IB = IE = 0A
fT
NF
Current Gain Bandwidth Product3
Narrow Band Noise Figure3
220
3
220
3
MHz
dB
VCE = 5V
IC = 1mA
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems
180
3
180
3
MIN.
MAX.
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
IT120A IT120 IT121 IT122
UNITS CONDITIONS
│VBE1-VBE2│
Base Emitter Voltage Differential
1
2
3
5
MAX. mV
IC = 10 µA
VCE = 5V
∆│(VBE1-VBE2)│/∆T Base Emitter Voltage Differential
3
5
10
20
MAX. µV/°C
IC = 10 µA
VCE = 5V
3
Change with Temperature
│IB1-IB2│
T = -55°C to +125°C
Base Current Differential
2.5
5
Six Lead
0.230
DIA.
0.209
0.150
0.210
0.170
0.115
6 LEADS
0.046
0.036
5
6
0.048
0.028
MIN. 0.500
VCE = 5V
C2
B1
B2
E1
E2
N/C
N/C
SEATING
PLANE
0.200
0.100
2 3
1
5
76
2 3
7
IC = 10 µA
C1
MAX.
0.040 0.165
0.185
0.029
0.045
0.050
1
MAX. nA
0.335
0.370
0.016
0.019
DIM. A
0.100
45°
0.305
0.335
0.500 MIN. 0.016
0.021
DIM. B
0.019 DIA.
0.016
25
TO-78
TO-71
0.195
DIA.
0.175
0.030
MAX.
25
45°
0.028
0.034
0.100
C1
C2
B1
B2
E1
E2
N/C
N/C
Note: All Dimensions in inches
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
3. Not a production test.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201155 8/30/2012 Rev#A3 ECN# IT120 IT120A IT121 IT122