LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS FEATURES Δre =1 TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector-Current 10mA Maximum Temperatures Storage Temperature Range -55°C to +150°C Operating Junction Temperature -55°C to +150°C Maximum Power Dissipation ONE SIDE TO 71 & TO 78 TOP VIEW BOTH SIDES Device Dissipation TA=25°C 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC LS318 Δre Log Conformance 1.5 MAX. Ω IC = 10-100-1000µA BVCBO Collector-Base Breakdown Voltage 25 MIN. V IC = 10µA IE = 0A BVCEO Collector to Emitter Voltage 25 MIN. V IC = 100µA IB = 0A BVEBO Emitter-Base Breakdown Voltage 6.0 MIN. V IE = 10µA IC = 0A BVCCO Collector to Collector Voltage 45 MIN. V IC = 10µA IB = IE =0A hFE DC Current Gain 150 MIN. IC = 10µA VCE = 5V 600 MAX. 150 MIN. IC = 100µA VCE = 5V 600 MAX. hFE DC Current Gain UNITS CONDITIONS VCE = 5V NOTE 2 hFE DC Current Gain 150 MIN. IC = 1mA VCE = 5V VCE(SAT) Collector Saturation Voltage 0.25 MAX. V IC = 1mA IB = 0.1 mA ICBO Collector Cutoff Current 0.2 MAX. nA IE = 0A VCB = 20V IEBO Emitter Cutoff Current 0.2 MAX. nA IC = 0A COBO Output Capacitance 1.8 pF IE = 0A CC1C2 Collector to Collector Capacitance 1.8 pF VCC = 0V f=1MHz IC1C2 Collector to Collector Leakage Current 0.5 MAX. µA VCC = ±45V IB = IE = 0A fT NF Current Gain Bandwidth Product Narrow Band Noise Figure 220 3 MAX. MHz dB IC = 1mA VCE = 5V NOTE 3 IC = 100µA VCE = 5V NOTE 3 BW = 200Hz, RG = 10 K f=1KHz Linear Integrated Systems VEB = 3V VCB = 3V f=1MHz NOTE 3 NOTE 3 • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201118 05/16/2014 Rev#A8 ECN# LS318 MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC │VBE1-VBE2│ Base Emitter Voltage Differential │(VBE1-VBE2)│/ºC Base Emitter Voltage Differential LS318 UNITS CONDITIONS 0.4 TYP. mV 1 MAX. mV 1 TYP. µV/°C Change with Temperature IC = 10 µA VCE = 5V IC = 10 µA VCE = 5V TA = -55°C to +125°C │IB1-IB2│ Base Current Differential 10 MAX. nA IC = 10 µA VCE = 5V │(IB1-IB2)│/ºC Base Current Differential 0.4 TYP. nA/ºC IC = 10 µA VCE = 5V 5 TYP. % Change with Temperature hFE1/hFE2 DC Current Gain Differential TA = -55°C to +125°C IC = 10 µA VCE = 5V C1 C2 B1 B2 E1 E2 N/C N/C 0.210 0.170 0.170 C1 C2 B1 B2 E1 E2 N/C N/C Note: All Dimensions in inches NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. Not tested; guaranteed by design. 4. All MIN/TYP/MAX values are absolute numbers. Negative signs indicate electrical polarity only. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201118 05/16/2014 Rev#A8 ECN# LS318