LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN hFE 200 @ 10µA - 1mA TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 275 MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C (unless otherwise stated) IC Collector Current 10mA Maximum Temperatures Storage Temperature -55° to +150°C Operating Junction Temperature -55° to +150°C Maximum Power Dissipation ONE SIDE Device Dissipation @ Free Air 250mW 500mW Linear Derating Factor 2.3mW/°C 4.3mW/°C Top View SOT-23 6 LEADS BOTH SIDES Top View TO-71 & TO-78 ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC LS350 LS351 LS352 UNITS CONDITIONS BVCBO Collector to Base Voltage 25 45 60 MIN. V IC = 10µA IE = 0 BVCEO Collector to Emitter Voltage 25 45 60 MIN. V IC = 1mA IB = 0 BVEBO Emitter to Base Voltage 6.0 6.0 6.0 MIN. V IE = 10µA BVCCO Collector to Collector Voltage ±25 ±45 ±80 MIN. V IC = ±1µA IE = 0 = IB = 0 hFE DC Current Gain 100 150 200 MIN. IC = 10µA VCE = 5V 600 600 MAX. hFE DC Current Gain 100 150 200 MIN. IC = 100µA VCE = 5V 600 600 MAX. IC = 0 NOTE 2 hFE DC Current Gain 100 150 200 MIN. IC = 1mA, VCE = 5V VCE(SAT) Collector Saturation Voltage 0.5 0.5 0.5 MAX. V IC = 1mA IB = 0.1mA ICBO Collector Cutoff Current 0.2 0.2 0.2 MAX. nA IE = 0 VCB = NOTE 3 IEBO Emitter Cutoff Current 0.2 0.2 0.2 MAX. nA IC = 0 VEB = 3V COBO Output Capacitance 2 2 2 MAX. pF IE = 0 CC1C2 Collector to Collector Capacitance 2 2 2 MAX. pF VCC = 0 IC1C2 Collector to Collector Leakage Current 1.0 1.0 1.0 MAX. µA VCC = NOTE 4 fT Current Gain Bandwidth Product 200 200 200 MIN. MHz NF Narrow Band Noise Figure 3 3 3 MAX. dB VCB = 5V IC = 1mA VCE = 5V IC = 100µA VCE = 5V BW = 200Hz RG = 10K f = 1KHz Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201119 06/15/2013 Rev#A5 ECN# LS350 LS351 LS352 LS350 MATCHING CHARACTERISTICS SYMBOL IVBE1-VBE2I SOT-23 CHARACTERISTIC Base Emitter Voltage Differential I(V BE1-VBE2)I/°C Base Emitter Voltage Differential Change with Temperature LS350 LS351 LS352 UNITS 1 0.4 0.2 TYP. mV 5 1.0 0.5 MAX. mV 2 1 0.5 TYP. 20 10 2 MAX. IC = 10 µA VCE = 5V µV/°C IC = 10 µA VCE = 5V µV/°C TA = -55°C to +125°C IIB1- IB2I Base Current Differential 5 5 MAX. nA I (I B1 - IB2)I/°C Base Current Differential 0.5 0.3 MAX. nA/°C Change with Temperature hFE1/hFE2 DC Current Gain Differential CONDITIONS IC = 10µA VCE = 5V IC = 10 µA, VCE = 5V TA = -55°C to +125°C 10 5 5 TYP. % IC = 10µA VCE = 5V SOT-23 0.95 1.90 1 6 2 5 3 4 0.210 0.170 0.35 0.50 2.80 3.00 1.50 1.75 2.60 3.00 0.90 1.30 0.09 0.20 0.10 0.60 0.00 0.15 DIMENSIONS IN MILLIMETERS 4 4 8 8 NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired 2. The reverse base-to-emitter voltage must never exceed 6.0 volts; the reverse base-to-emitter current must never exceed 10 µA. 3. For LS350: VCB=20V; for LS351 & LS352: VCB=30V. 4. For LS351: VCC=±45V; for LS352: VCC=±80V; for LS350: VCC=±25V. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201119 06/15/2013 Rev#A5 ECN# LS350 LS351 LS352