http://www.irf.com/ QR-0008: Reliability Qualification Report for IRS21864SPBF Date:June 14th, 2006 Qualification Vehicle: IRS21864SPBF in 14L-SOICN package: Based on the reliability test results, the IRS21864SPBF has passed standard International Rectifier industriallevel qualification with MSL3 at 260 °C peak reflow temperature (PRT). The handling, packing, shipping and use of the moisture/reflow sensitive surface mount devices need to be per IPC/JEDEC J-STD-033A spec. Device and Lot Information Rel Number Product/Part # Qualification Level Silicon Technology Silicon Generation Wafer Fab Lead Finish Plating Moisture Sensitivity Level Reliability Test Location 10269-1-2-3 IRS21864SPBF Lead-Free Industrial per COP800-08-Rev00 600 V HVIC Gen 5 Fab11 100% Sn 14L-SOICN Package: MSL3 @ 260 oC Per JEDEC spec JA113 / JEDEC J-STD-020C (Test Samples were subjected to preconditioning prior to AC, TC & THB reliability tests, HTB samples do not require precon). IR Temecula, USA POWER IC PRODUCTS Page 1 of 3 http://www.irf.com/ Reliability Test Results: Samples from three wafer lots and three assembly lots were tested in the following reliability tests to determine typical lifetime performance under industrial level qualification. The tests samples passed AC, TC, THB and HTB reliability test requirements. THE STRESS TESTS CONDITIONS AND RESULTS ARE AS FOLLOWS: Reliability Test #1 Test Duration: Test Condition: Bias Condition: Electrical Testing: Device Lot ID 1 IRS21864SPbF 2 IRS21864SPbF 3 IRS21864SPbF Autoclave Test (AC): 96 Hours +121 °C, 100%RH and 15 PSIG None @ Room Hour SS Reject 0 80 96 0 80 96 0 80 96 Reliability Test #2 Test Duration: Test Condition: Bias Condition: Electrical Testing: Temperature Cycling (TC): 1000 Cycles -55 °C to 150 °C (ΔT=205 °C, Dry-Air to Dry-Air) None @ Room Device Lot ID Cycle IRS21864SPbF IRS21864SPbF IRS21864SPbF 1 2 3 Reliability Test #3 Test Duration: Test Condition: Bias Condition: Electrical Testing: Device IRS21864SPbF IRS21864SPbF IRS21864SPbF IRS21864SPbF IRS21864SPbF IRS21864SPbF 1000 1000 1000 Reject 80 80 80 Remark 0 0 0 Temperature Humidity Bias (THB) Test: 1000 Hours 85 °C, 85%RH VCC=20 V, VB=20 V, VS=0 V (Com) @ Room Lot ID 1 2 3 Reliability Test #4 Test Duration: Test Condition: Bias Condition: Electrical Testing: Device SS Remark Hour SS Reject 1000 1000 1000 80 80 80 0 0 0 Remark High Temperature Bias (HTB) Test: 1008 Hours Tj=150 °C VCC=20 V, VBS=20 V, VS=480 V @ Room Lot ID 1 2 3 Hour SS Reject 1000 1000 1000 80 77 80 0 0 0 POWER IC PRODUCTS Remark Page 2 of 3 http://www.irf.com/ Reliability Test #5 Test Duration: Test Condition: Bias Condition: Electrical Testing: Device IRS21864SPbF High Temperature Storage Life (HTSL) Test: 1008 Hours Tj,A=150 °C No bias required @ Room Lot ID 1 Hour SS Reject 1000 80 0 Remark Other Required Tests Results: 1. Resistance to Solder Heat/Wave-Solder: Test 30 devices from one lot per package/device-vehicle in accordance with JEDEC, JESD22A111 – Passed (reference report: 10260-1-RSH). 2. Solderability: Test 10 devices from one lot per package/device-vehicle in accordance with JESD-106-B – Passed (reference report: 10260-1-SLDR). 3. ESD: The following is the results of ESD tests that were performed by the R/D (Design Center) group. IRS21864SPbF: Human Body Model ESD (100 pF/1500 Ω) Device: IRS21864SPBF Lot # 551Q Date code: C05AQ Number of samples: 3 per test model Test date: 2/9/06 Test Pin Combination Rating All Power Pin Combinations 3.5 kV Machine Model ESD (200 pF/ 0 Ω) Device: IRS21864SPBF Lot # 551Q Date code: C05AQ Number of samples: 3 per test model Test date: 2/9/06 Test Pin Combination Rating All Pin Combinations 200 V to 400 V 4. LATCH-UP: The following is the results of the LU test that was performed by the R/D (Design Center) group. Device: IRS21864SPBF Lot # 551Q Date code: C05AQ Number of samples: 6 Test Date: 2/9/06 Sample 1 Sample 2 HO > VB 2.0 A 2.0 A HO < VS 2.0 A 2.0 A LO > VCC 2.0 A 2.0 A LO < COM 2.0 A 2.0 A Sample 3 2.0 A 2.0 A 2.0 A 2.0 A Sample 4 2.0 A 2.0 A 2.0 A 2.0 A Sample 5 2.0 A 2.0 A 2.0 A 2.0 A Sample 6 2.0 A 2.0 A 2.0 A 2.0 A End of report POWER IC PRODUCTS Page 3 of 3