IRG7PH42UD1MPbF Product Datasheet

IRG7PH42UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
•
•
•
•
•
•
•
•
•
C
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
Ultra-low VF Diode
1300Vpk repetitive transient capacity
100% of the parts tested for ILM 
Positive VCE (ON) temperature co-efficient
Tight parameter distribution
Lead free package
VCES = 1200V
IC = 45A, TC = 100°C
TJ(max) = 150°C
G
VCE(on) typ. = 1.7V @IC= 30A
E
n-channel
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
G
C
G
TO-247AD
G
Gate
Base part number
Package Type
IRG7PH42UD1MPbF
TO-247AD
E
C
Collector
Standard Pack
Form
Tube
E
Emitter
Orderable Part Number
Quantity
25
IRG7PH42UD1MPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
V(BR) Transient
Repetitive Transient Collector-to-Emitter Voltage
Max.
i
g
IC @ TC = 25°C
Continuous Collector Current
85
Continuous Collector Current
45
ICM
Pulse Collector Current, VGE=15V
ILM
Clamped Inductive Load Current, VGE
200
=20V c
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
Diode Continous Forward Current
IFRM
Diode Repetitive Peak Forward Current
V
1300
IC @ TC = 100°C
dh
Units
1200
A
120
70
35
d
120
VGE
Continuous Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
313
PD @ TC = 100°C
Maximum Power Dissipation
125
TJ
Operating Junction and
TSTG
Storage Temperature Range
V
W
-55 to +150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
Typ.
Max.
–––
–––
0.4
–––
–––
1.05
RθJC (Diode)
f
Thermal Resistance Junction-to-Case-(each Diode) f
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
40
–––
RθJC (IGBT)
1
Thermal Resistance Junction-to-Case-(each IGBT)
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© 2012 International Rectifier
Units
°C/W
April 26, 2012
IRG7PH42UD1MPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
1200
—
—
—
1.2
—
—
1.7
2.0
—
2.0
—
Gate Threshold Voltage
3.0
—
6.0
V
VCE = VGE, I C = 1.0mA
gfe
Forward Transconductance
—
32
—
S
VCE = 50V, IC = 30A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
—
1.0
100
—
230
—
—
1.15
1.30
—
1.10
—
—
—
±100
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Δ V(B R )CES /ΔT J
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
Max. Units
V
Conditions
VGE = 0V, IC = 100μA
e
V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
V
μA
V
nA
I C = 30A, VGE = 15V, TJ = 25°C
I C = 30A, VGE = 15V, TJ = 150°C
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
I F = 30A
I F = 30A, TJ = 150°C
VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Min.
Typ.
—
180
Max. Units
270
Qge
Gate-to-Emitter Charge (turn-on)
—
24
36
Qgc
Gate-to-Collector Charge (turn-on)
—
70
110
Eoff
Turn-Off Switching Loss
—
1210
1450
td(off)
Turn-Off delay time
—
270
290
tf
Fall time
—
35
43
Eoff
Turn-Off Switching Loss
—
1936
—
Conditions
I C = 30A
nC
VGE = 15V
V CC = 600V
I C = 30A, VCC = 600V, VGE = 15V
μJ
RG = 10Ω, L = 200μH,TJ = 25°C
Energy losses include tail
ns
I C = 30A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200μH,TJ = 25°C
I C = 30A, VCC = 600V, VGE = 15V
μJ
RG = 10Ω, L = 200μH,TJ = 150°C
Energy losses include tail
td(off)
Turn-Off delay time
—
300
—
tf
Fall time
—
160
—
RG = 10Ω, L = 200μH, TJ = 150°C
Cies
Input Capacitance
—
3390
—
VGE = 0V
Coes
Output Capacitance
—
130
—
Cres
Reverse Transfer Capacitance
—
83
—
RBSOA
Reverse Bias Safe Operating Area
ns
pF
I C = 30A, VCC = 600V, VGE = 15V
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 120A
FULL SQUARE
VCC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
† FBSOA operating conditions only
‡ VGE = 0V, TJ = 75°C, PW ≤ 10μs.
2
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© 2012 International Rectifier
April 26, 2012
IRG7PH42UD1MPbF
350
100
LIMITED BY PACKAGE
250
60
Ptot (W)
IC, Collector Current (A)
300
80
40
200
150
100
20
50
0
0
25
50
75
100
125
150
25
50
75
150
Fig. 2 - Power Dissipation vs. Case
Temperature
1.0
1000
IC = 1.0mA
0.9
100
0.8
0.7
10
0.6
0.5
1
25
50
75
100
125
150
10
100
1000
TJ , Temperature (°C)
10000
VCE (V)
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
120
120
V GE = 18V
V GE = 18V
100
V GE = 12V
V GE = 12V
V GE = 10V
80
V GE = 10V
ICE (A)
V GE = 8.0V
60
V GE = 15V
100
V GE = 15V
80
ICE (A)
125
IC (A)
V GE(th), Gate Threshold Voltage (Normalized)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
V GE = 8.0V
60
40
40
20
20
0
0
0
2
4
6
8
10
V CE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
100
TC (°C)
TC, Case Temperature (°C)
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© 2012 International Rectifier
0
2
4
6
8
10
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
April 26, 2012
IRG7PH42UD1MPbF
140
120
VGE = 18V
VGE = 15V
100
80
25°C
150°C
100
VGE = 8.0V
IF (A)
ICE (A)
120
VGE = 12V
VGE = 10V
60
40
80
60
40
20
20
0
0
0
2
4
6
8
0.0
10
0.5
1.0
Fig. 8 - Typ. Diode Forward Voltage Drop
Characteristics
20
20
18
18
16
16
14
14
ICE = 15A
ICE = 30A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80μs
10
ICE = 60A
8
12
ICE = 15A
ICE = 30A
10
8
ICE = 60A
6
6
4
4
2
2
0
0
5
10
15
5
20
10
15
20
VGE (V)
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
20
120
ICE, Collector-to-Emitter Current (A)
18
16
14
VCE (V)
2.0
VF (V)
V CE (V)
12
1.5
12
ICE = 15A
10
ICE = 30A
8
ICE = 60A
6
4
100
80
TJ = 25°C
TJ = 150°C
60
40
20
2
0
0
5
10
15
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
4
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© 2012 International Rectifier
2
4
6
8
10
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
April 26, 2012
IRG7PH42UD1MPbF
5000
1000
4000
Swiching Time (ns)
EOFF
Energy (μJ)
3000
2000
tdOFF
tF
1000
100
0
0
10
20
30
40
50
60
0
70
I C (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
10
20
60
70
tdOFF
4500
Swiching Time (ns)
Energy (μJ)
50
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
5500
EOFF
3500
1000
100
tF
2500
10
1500
0
25
50
75
100
0
125
20
40
60
80
100
120
RG (Ω)
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
40
IC (A)
10000
6500
1000
Coes
100
Cres
10
14
V CES =600V
12
V CES = 400V
10
8
6
4
2
0
0
20
40
60
80
100
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
5
30
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© 2012 International Rectifier
0
50
100
150
200
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 30A; L = 680μH
April 26, 2012
IRG7PH42UD1MPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
τJ
R1
R1
τJ
τ1
1E-005
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τi (sec)
Ri (°C/W)
R4
R4
τ4
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R2
R2
0.1306
0.000313
0.1752
0.002056
0.0814
0.008349
0.0031
0.0431
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.1
0.10
τJ
0.05
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
1E-005
0.0001
τ4
0.01186
0.00001
0.39298
0.000547
0.43450
0.003563
0.22096
0.021596
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
τ4
τi (sec)
Ri (°C/W)
R4
R4
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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© 2012 International Rectifier
April 26, 2012
IRG7PH42UD1MPbF
L
L
DUT
0
80 V +
VCC
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1
-5V
22K
C sense
DUT /
DRIVER
VCC
DUT
G force
0.0075μF
Rg
E sense
E force
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
800
80
tf
70
600
60
500
50
400
40
90% ICE
300
30
200
ICE (A)
VCE (V)
700
20
5% VCE
100
5% ICE
10
0
0
Eoff Loss
-100
-1
-0.5
0
0.5
1
-10
1.5
2
time(μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
7
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© 2012 International Rectifier
April 26, 2012
IRG7PH42UD1MPbF
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
E
Q
A
A
E2/2
"A"
A2
E2
2X
D
B
L1
"A"
L
S EE
VIE W "B"
2x b2
3x b
Ø .010
B A
c
b4
e
A1
2x
LEAD TIP
ØP
Ø .010
B A
-A-
S
D1
VIEW: "B"
THERMAL PAD
PLAT ING
BAS E MET AL
E1
Ø .010
(c)
B A
VIEW: "A" - "A"
(b, b2, b4)
SECT ION: C-C, D-D, E-E
TO-247AD Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2001
IN THE AS S EMBLY LINE "H"
Note: "P" in as s embly line pos ition
indicates "Lead-Free"
INTERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
AS S EMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2012 International Rectifier
April 26, 2012
IRG7PH42UD1MPbF
†
Qualification information
†
Industrial
Qualification level
††
(per JE DEC JES D47F )
Moisture Sensitivity Level
RoHS compliant
†
††
N/A
TO-247AD
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
4/25/2013
Comments
Corrected part number from "IRG7PH42UD1M" to "IRG7PH42UD1MPbF".
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
9
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© 2012 International Rectifier
April 26, 2012