PD - 97250
IRGP4068DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRGP4068D-EPbF
Features
•
•
•
•
•
•
•
•
•
•
Low VCE (ON) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra-low VF Hyperfast Diode
Tight parameter distribution
Lead Free Package
C
VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
G
VCE(on) typ. = 1.65V
E
n-channel
Benefits
C
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
GC
E
TO-247AC
IRGP4068DPbF
G
Gate
E
GC
TO-247AD
IRGP4068D-EPbF
C
Collector
E
Emitter
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
96
IC @ TC = 100°C
Continuous Collector Current
48
ICM
192
ILM
Pulse Collector Current
Clamped Inductive Load Current
IF @ TC = 160°C
IFSM
Diode Continous Forward Current
Diode Non Repetitive Peak Surge Current @ TJ = 25°C
IFM
Diode Peak Repetitive Forward Current
VGE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
c
192
d
A
8.0
d
175
16
PD @ TC = 25°C
Maximum Power Dissipation
330
PD @ TC = 100°C
Maximum Power Dissipation
170
TJ
Operating Junction and
TSTG
Storage Temperature Range
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.45
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
2.0
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––
1
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08/16/06
IRGP4068DPbF/IRGP4068D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Parameter
600
—
—
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—
0.30
—
—
1.65
2.14
—
2.0
—
—
2.05
—
4.0
—
6.5
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Max. Units
V
Conditions
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
V
IC = 48A, VGE = 15V, TJ = 150°C
V
VCE = VGE, IC = 1.4mA
Threshold Voltage temp. coefficient
—
-21
—
gfe
ICES
Forward Transconductance
—
32
—
S
µA
VGE = 0V, VCE = 600V
V
IF = 8.0A
VFM
IGES
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
—
1.0
150
—
450
1000
—
0.96
1.05
—
0.81
0.86
—
—
±100
Ref.Fig
CT6
CT6
4,5,6
8,9,10
IC = 48A, VGE = 15V, TJ = 175°C
∆VGE(th)/∆TJ
Collector-to-Emitter Leakage Current
e
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
8,9
10,11
VCE = 50V, IC = 48A, PW = 80µs
VGE = 0V, VCE = 600V, TJ = 175°C
7
IF = 8.0A, TJ = 150°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
95
Max. Units
140
Qge
Gate-to-Emitter Charge (turn-on)
—
28
42
Qgc
Gate-to-Collector Charge (turn-on)
—
35
53
Eoff
Turn-Off Switching Loss
—
1275
1481
µJ
td(off)
Turn-Off delay time
—
145
176
µJ
tf
Fall time
—
35
46
Eoff
Turn-Off Switching Loss
—
1585
—
Conditions
IC = 48A
nC
VGE = 15V
Ref.Fig
18
CT1
VCC = 400V
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 25°C
CT4
Energy losses include tail
IC = 48A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 25°C
IC = 48A, VCC = 400V, VGE = 15V
µJ
RG = 10Ω, L = 200µH,TJ = 175°C
CT4
Energy losses include tail
td(off)
Turn-Off delay time
—
165
—
tf
Fall time
—
45
—
Cies
Input Capacitance
—
3025
—
Coes
Output Capacitance
—
245
—
Cres
Reverse Transfer Capacitance
—
90
—
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
µJ
IC = 48A, VCC = 400V, VGE = 15V
WF1
RG=10Ω, L=200µH, TJ = 175°C
VGE = 0V
pF
17
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 192A
3
VCC = 480V, Vp =600V
CT2
Rg = 10Ω, VGE = +15V to 0V
—
—
µs
VCC = 400V, Vp =600V
Rg = 10Ω, VGE = +15V to 0V
16, CT3
WF2
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGP4068DPbF/IRGP4068D-EPbF
100
350
90
300
80
250
70
200
Ptot (W)
IC (A)
60
50
40
150
30
100
20
50
10
0
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
200
1000
180
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
160
140
IC (A)
ICE (A)
100
10
120
100
80
60
40
20
0
1
10
100
0
1000
2
4
VCE (V)
200
180
180
140
ICE (A)
ICE (A)
100
80
120
100
80
60
60
40
40
20
20
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
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VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
120
10
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
200
140
8
VCE (V)
Fig. 3 - Reverse Bias SOA
TJ = 175°C; VGE =15V
160
6
0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
3
IRGP4068DPbF/IRGP4068D-EPbF
20
18
16
VCE (V)
14
12
ICE = 24A
ICE = 48A
10
ICE = 96A
8
6
4
2
0
5
10
15
20
VGE (V)
Fig. 8 - Typical VCE vs. VGE
TJ = -40°C
20
20
18
18
16
16
14
14
12
ICE = 24A
ICE = 48A
10
VCE (V)
VCE (V)
Fig. 7 - Typ. Diode Forward Voltage Drop
Characteristics
ICE = 96A
8
12
10
ICE = 96A
8
6
6
4
4
2
2
0
ICE = 24A
ICE = 48A
0
5
10
15
20
5
10
VGE (V)
20
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
6000
200
180
T J = 25°C
T J = 175°C
160
5000
140
EOFF
4000
Energy (µJ)
ICE (A)
15
120
100
80
3000
2000
60
40
1000
20
0
0
0
5
10
VGE (V)
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
4
15
0
25
50
75
100
IC (A)
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
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IRGP4068DPbF/IRGP4068D-EPbF
5000
1000
4500
EOFF
tdOFF
3500
Energy (µJ)
Swiching Time (ns)
4000
100
3000
2500
tF
2000
1500
1000
10
0
20
40
60
80
0
100
25
50
IC (A)
400
18
tdOFF
16
350
Tsc
Isc
Time (µs)
14
100
tF
300
12
250
10
200
8
150
6
100
50
4
10
0
25
50
75
100
8
125
Current (A)
Swiching Time (ns)
125
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
1000
10
12
14
16
18
VGE (V)
RG (Ω)
Fig. 16 - VGE vs. Short Circuit
VCC = 400V; TC = 25°C
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V
10000
16
VGE, Gate-to-Emitter Voltage (V)
Cies
1000
Coes
100
Cres
10
V CES = 300V
14
V CES = 400V
12
10
8
6
4
2
0
0
20
40
60
80
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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100
Rg (Ω)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
Capacitance (pF)
75
100
0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 48A; L = 600µH
5
IRGP4068DPbF/IRGP4068D-EPbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
τC
τ
τ2
τ1
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
Ri (°C/W)
τi (sec)
0.0248
0.000014
0.0652
0.000050
0.1537
0.001041
0.2065
0.013663
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
R4
R4
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
τJ
0.01
0.0001
1E-006
1E-005
τJ
τ1
R2
R2
R3
R3
R4
R4
τC
τ
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R1
R1
τ4
τ4
Ri (°C/W)
τi (sec)
0.0400
0.000030
0.7532
0.000717
0.8317
0.004860
0.3766
0.036590
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRGP4068DPbF/IRGP4068D-EPbF
L
L
VC C
D UT
0
80 V
DU T
4 80V
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
DIODE CLAMP /
DUT
L
4x
DC
- 5V
360V
DUT /
DRIVER
DUT
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
R=
Fig.C.T.4 - Switching Loss Circuit
VCC
ICM
C force
400µH
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
7
IRGP4068DPbF/IRGP4068D-EPbF
700
140
600
600
120
500
500
VCE
400
60
90% ICE
5% VCE
100
5% ICE
0
EOFF Loss
0.10
0.60
300
300
200
200
100
100
ICE (A)
300
200
40
20
0
-20
1.10
Time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
8
ICE
80
tf
-100
-0.40
500
400
VCE (V)
VCE (V)
400
100
600
0
0
-100
-5.00
0.00
5.00
-100
10.00
time (µS)
Fig. WF2 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
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IRGP4068DPbF/IRGP4068D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application.
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9
IRGP4068DPbF/IRGP4068D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/06
10
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