IRFH5302PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns 100 h PQFN 5X6 mm A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<2.5mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5302DTRPBF IRFH5302DTR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density Multi-Vendor Compatibility ⇒ Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL Notice #259 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 23 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 100 ID @ TC(Bottom) = 100°C 100 IDM Continuous Drain Current, VGS Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 29 h @ 10V h A 400 3.6 g Units 104 0.83 -55 to + 150 W W/°C °C Notes through are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 6, 2014 IRFH5302PbF Static @ TJ = 25°C (unless otherwise specified) Min. Typ. BVDSS ∆ΒVDSS/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter 30 ––– ––– -0.25 ––– ––– V VGS = 0V, ID = 500µA V/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 2.0 3.1 2.5 3.7 mΩ VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -10 ––– ––– 500 mV/°C Gate-to-Source Forward Leakage ––– ––– ––– ––– 5.0 100 Gate-to-Source Reverse Leakage Forward Transconductance ––– 110 ––– ––– -100 ––– Total Gate Charge Total Gate Charge ––– ––– 55 26 ––– 39 IDSS IGSS gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Max. Units µA mA nA Conditions e e VGS = 10V, ID = 50A VGS = 4.5V, ID = 50A VDS = VGS, ID = 100µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V S VGS = -20V VDS = 15V, ID = 50A nC VGS = 10V, VDS = 15V, ID = 50A Pre-Vth Gate-to-Source Charge ––– 6.2 ––– VDS = 15V Post-Vth Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 4.0 7.9 ––– ––– nC VGS = 4.5V ID = 50A Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– 7.9 11.9 ––– ––– Output Charge ––– 19 ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time ––– ––– 1.9 16 ––– ––– Ω Rise Time Turn-Off Delay Time ––– ––– 30 20 ––– ––– Fall Time Input Capacitance ––– ––– 12 3635 ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– 680 260 ––– ––– VDD = 15V, VGS = 4.5V ns ID = 50A RG=1.8Ω VGS = 0V pF VDS = 25V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Typ. ––– ––– d Max. 130 50 Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. ––– VSD trr Qrr ton ––– Max. Units ––– ––– Conditions MOSFET symbol 100 A c VSD Typ. 400 showing the integral reverse D G (Body Diode) Diode Forward Voltage Diode Forward Voltage ––– ––– ––– ––– 0.65 1.0 V V p-n junction diode. TJ = 25°C, IS = 5.0A, VGS = 0V TJ = 25°C, IS = 50A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge ––– ––– 19 28 29 42 ns nC TJ = 25°C, IF = 50A, VDD = 15V di/dt = 300A/µs Forward Turn-On Time S e e e Time is dominated by parasitic Inductance Thermal Resistance RθJC (Top) f Junction-to-Case f RθJA Junction-to-Ambient RθJC (Bottom) RθJA (<10s) 2 Parameter Junction-to-Case g Junction-to-Ambient g www.irf.com © 2014 International Rectifier Typ. Max. ––– 1.2 ––– 15 ––– 35 ––– 22 Submit Datasheet Feedback Units °C/W January 6, 2014 IRFH5302PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100 10 2.5V 1 BOTTOM 2.5V 10 ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 150°C T J = 25°C 10 VDS = 15V ≤60µs PULSE WIDTH 1.0 ID = 50A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 50A C oss = C ds + C gd 10000 Ciss Coss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Crss 100 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 20 40 60 80 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback January 6, 2014 IRFH5302PbF 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 150°C TJ = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 1msec 100 10msec 10 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 3.0 140 VGS(th) , Gate threshold Voltage (V) 160 ID, Drain Current (A) DC Limited By Package 120 100 80 60 40 20 0 2.5 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 0.0 25 50 75 100 125 150 -75 -50 -25 T C , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 6, 2014 7 600 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH5302PbF ID = 50A 6 5 4 TJ = 125°C 3 2 TJ = 25°C 1 ID 8.7A 16A BOTTOM 50A TOP 500 400 300 200 100 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback January 6, 2014 IRFH5302PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback January 6, 2014 IRFH5302PbF PQFN 5x6 Outline "B" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 6, 2014 IRFH5302PbF PQFN 5x6 Outline "B" Tape and Reel Qualification information† Indus trial Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level RoHS compliant PQFN 5mm x 6mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.14mH, RG = 25Ω, IAS = 50A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production test capability. Revision History Date Comment Idss limits at Tj 25°C is changed to 500µA max, Vds = 24V and at Tj 125°C it is changed to 5.0mA • 3/31/2010 max, Vds = 24V. All other parameters remain unchanged. 1/6/2014 • Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259). • Updated data sheet with the new IR corporate template. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 6, 2014