LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N−Channel, Gate ESD Protection LNTK4003M3T5G 3 ●APPLICATIONS 1) Level Shifters 2) Level Switches 3) Low Side Load Switches 4) Portable Applications 2 1 SOT-723 ●FEATURES Drain 3 1) Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design 2) Low Gate Charge for Fast Switching 3) ESD Protected Gate 4) Minimum Breakdown Voltage Rating of 30 V Gate 1 5) We declare that the material of product compliant with RoHS requirements and Halogen Free. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking LNTK4003M3T5G KM ●MAXIMUM RATINGS(Ta = 25℃) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Continuous Drain Current (Note 1) t < 5 s TA = 25°C TA = 85°C TA = 25°C TA = 85°C Steady State Power Dissipation (Note 1) t<5s Pulsed Drain Current tp = 10 μs Continuous Source Current (Body Diode) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes ●THERMAL CHARACTERISTICS Parameter Junction−to−Ambient − Steady State (Note 1) Junction−to−Ambient − t = 5 s (Note 1) Junction−to−Ambient − Steady State (Note 2) 2 Source Shipping 8000/Tape&Reel Symbol VDSS VGS ID PD IDM IS TJ, Tstg TL Symbol RθJA RθJA RθJA Limits 30 ±20 0.5 0.37 0.56 0.4 0.44 0.55 1.7 1.0 –55 to +150 260 Unit V V A A A A Limits 280 228 400 Unit W A A °C °C °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size June,2015 Rev.A 1/6 LESHAN RADIO COMPANY, LTD. LNTK4003M3T5G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Parameter Conditions VGS = 0 V, ID = 100 μA Symbol Min. Typ. Max. Unit V(BR)DSS 30 – – V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ – 40 – mV/°C Zero Gate Voltage Drain Current IDSS – – 1 μA VGS = 0 V, VDS = 30 V TJ = 25°C Gate−to−Source Leakage Current IGSS – – ±1 μA VDS = 0 V, VGS = ±10V VGS(TH) 0.8 – 1.6 V VGS = VDS, ID = 250 μA VGS(TH)/TJ – 3.4 – mV/°C – 1 1.5 Ω VGS = 4V, ID = 10A – 1.5 2 Ω VGS = 2.5 V, ID =10 A gFS – 0.33 – S VDS = 3.0 V, ID = 10 A Ciss Coss Crss QG(TOT) QG(TH) QGS QGD – – – – – – – 21 19.7 8.1 1.15 0.15 0.32 0.23 – – – – pF VGS = 0 V, f = 1.0 MHz, VDS= 5 V nC VGS = 5 V, VDS = 24 V ID = 0.1 A Drain−to−Source Breakdown Voltage ON CHARACTERISTICS(Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance RDS(on) CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Gate Charge Gate−to−Drain Charge – – 3. Pulse Test: Pulse width≤300μs, duty cycle ≤2%. June,2015 Rev.A 2/6 LESHAN RADIO COMPANY, LTD. LNTK4003M3T5G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) Rise Time tr Turn−Off Delay Time td(off) Fall Time tf SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage – – – – 16.7 47.9 65.1 64.2 – – – – ns VGS =4.5V, VDD =5.0 V, ID = 0.1 A, RG = 50 Ω – 0.65 0.7 V VGS = 0 V, ISD = 10mA, TJ = 25°C VSD Reverse Recovery Time trr – 0.45 – V VGS = 0 V, ISD = 10mA, TJ = 125°C – 14 – ns VGS = 0 V, dIS/dt = 8A/μs IS = 10 mA 4. Switching characteristics are independent of operating junction temperatures ELECTRICAL CHARACTERISTIC CURVES 2.5 2 2 ID(A) ID(A) 1.5 1 1.5 1 0.5 0.5 0 0 0.5 1 VDS(V) 1.5 2 0 0 VGS= 2.5V VGS= 3.5V VGS= 4V VGS=4.5V VGS= 5V VGS= 6V VGS= 7V VGS= 8V VGS= 9V 2 4 6 VGS(V) 25℃ 125℃ -55℃ VGS= 10V FIG.1 On−Region Characteristics June,2015 FIG.2 Transfer Characteristics Rev.A 3/6 LESHAN RADIO COMPANY, LTD. LNTK4003M3T5G ELECTRICAL CHARACTERISTIC CURVES 10 1 ID=0.2A 0.8 6 RDS(on) RDS(on) 8 4 0.6 0.4 0.2 2 0 0 0 2 2.4 2.8 3.2 VGS(V) 3.6 FIG.3 On−Resistance vs. Gate−to−Source V oltage 0.4 0.6 ID(A) -55℃ 25℃ 125℃ FIG.4 On−Resistance vs. Drain Current and Temperature 1000 1.8 1.6 1.4 IDSS(nA) RDS(on) NORMALIZED 0.2 4 1.2 100 1 0.8 10 0 0.6 -50 -25 0 25 50 75 100 125 150 TJ(℃) FIG.5 On−Resistance Variation with T emperature June,2015 5 10 15 VDS(V) 125℃ 20 25 30 150℃ FIG.6 Drain−to−Source Leakage Current vs. Voltage Rev.A 4/6 LESHAN RADIO COMPANY, LTD. LNTK4003M3T5G ELECTRICAL CHARACTERISTIC CURVES FIG.8 Gate−to−Source & Drain−to−Source Voltage vs. Total Charge FIG.7 Capacitance Variation 1 IDR(A) 0.1 0.01 0.001 0.2 0.4 0.6 VSD(V) 25℃ 0.8 1 150℃ FIG.9 Diode Forward Voltage vs. Current June,2015 Rev.A 5/6 LESHAN RADIO COMPANY, LTD. LNTK4003M3T5G SOT-723 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 SOLDERING FOOTPRINT 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 mm Ǔ ǒinches June,2015 Rev.A 6/6