L2N7002KN3T5G

LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
380 mAmps, 60 Volts
L2N7002KN3T5G
N–Channel SOT883
Features
•
•
•
•
•
3
ESD Protected
Low RDS(on)
Surface Mount Package
This is a Pb−Free Device
2
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
1
SOT883
Applications
•
•
•
•
Low Side Load Switch
Level Shift Circuits
DC−DC Converter
Portable Applications i.e. DSC, PDA, Cell Phone, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Rating
Drain Current (Note 1)
Steady State
ID
TA = 25°C
TA = 85°C
RDS(on) MAX
ID MAX
(Note 1)
60 V
1.8 W @ 10 V
380 mA
2.5 W @ 5.0 V
mA
380
270
TA = 25°C
TA = 85°C
t<5s
320
230
V(BR)DSS
Drain
3
Power Dissipation (Note 1)
Steady State
PD
Pulsed Drain Current (tp = 10 ms)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
V
Gate−Source ESD Rating
(HBM, Method 3015)
250
mW
1
Gate
2
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RqJA
500
°C/W
Junction−to−Ambient − Steady State
(Note 1)
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
ORDERING INFORMATION
Device
L2N7002KN3T5G
Marking
RK
Shipping
10000 Tape & Reel
Rev .A 1/5
LESHAN RADIO COMPANY, LTD.
L2N7002KN3T5G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
IGSS
V
mV/°C
TJ = 25°C
1
TJ = 125°C
500
TJ = 25°C
100
nA
±10
mA
2.5
V
VDS = 0 V, VGS = ±20 V
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
VGS = VDS, ID = 250 mA
1.0
4.0
mV/°C
VGS = 10 V, ID = 500 mA
1.8
VGS = 5.0 V, ID = 50 mA
2.5
VDS = 5 V, ID = 200 mA
W
80
S
32.8
pF
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 0 V, f = 1 MHz,
VDS = 25 V
5.4
2.9
nC
0.7
VGS = 4.5 V, VDS = 10 V;
ID = 200 mA
0.1
0.3
0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
9.9
VGS = 10 V, VDD = 10 V,
ID = 500 mA
tf
5.0
39.4
17.9
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 115 mA
TJ = 25°C
TJ = 85°C
1.4
V
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
Rev .A 2/5
LESHAN RADIO COMPANY, LTD.
L2N7002KN3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
9.0 V
8.0 V
7.0 V
6.0 V
1.2
1.2
5.0 V
4.5 V
VGS = 10 V
4.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.6
3.5 V
0.8
3.0 V
0.4
0.8
TJ = 25°C
0.4
2.5 V
0
2
4
6
4
6
TJ = 125°C
TJ = 85°C
TJ = 25°C
1.6
TJ = −55°C
1.2
0.8
0.4
0.2
0.4
0.6
0.8
1.0
1.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
2.0
3.2
VGS = 10 V
2.8
2.4
TJ = 125°C
2.0
TJ = 85°C
1.6
TJ = 25°C
1.2
TJ = −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.2
2.4
2.0
ID = 500 mA
1.6
ID = 200 mA
1.2
0.8
0.4
2
Figure 1. On−Region Characteristics
VGS = 4.5 V
0
0
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.4
0
TJ = 125°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3.2
2.8
0
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
2
4
6
8
10
ID = 0.2 A
1.8
VGS = 4.5 V
VGS = 10 V
1.4
1.0
0.6
−50
−25
0
25
50
75
100
125
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
Rev .A 3/5
150
LESHAN RADIO COMPANY, LTD.
L2N7002KN3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
30
20
TJ = 25°C
VGS = 0 V
Coss
10
0
Crss
0
4
8
12
16
20
5
TJ = 25°C
ID = 0.2 A
4
3
2
1
0
0
0.2
0.4
0.6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
VGS = 0 V
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
Ciss
1
TJ = 85°C
TJ = 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Rev .A 4/5
0.8
LESHAN RADIO COMPANY, LTD.
L2N7002KN3T5G
SOT883
DIMENSION OUTLINE:
Unit:mm
Rev .A 5/5