LBAS20HT1G Switching Diode High Voltage S

LESHAN RADIO COMPANY, LTD.
High Voltage
LBAS20HT1G
S-LBAS20HT1G
Switching Diode
z We declare that the material of product compliance with
1
RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
SOD– 323
ORDERING INFORMATION
1
CATHODE
Device
Marking
Shipping
LBAS20HT1G
S-LBAS20HT1G
JR
3000/Tape&Reel
LBAS20HT3G
S-LBAS20HT3G
JR
10000/Tape&Reel
2
ANODE
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
IF
IFM(surge)
Value
200
200
625
Unit
Vdc
mAdc
mAdc
Symbol
PD
Max
200
Unit
mW
RθJA
1.57
635
mW/°C
°C/W
TJ, Tstg
–55 to+150
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
–
–
200
1.0
100
–
CD
–
–
–
1000
1250
5.0
pF
trr
–
50
ns
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 Ω)
µAdc
IR
V(BR)
VF
Vdc
mV
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBAS20HT1G,S-LBAS20HT1G
820 Ω
IF
2.0 k
100 µH
0.1 µF
+10 V
0.1 µF
IF
tp
tr
t
t rr
10%
t
D.U.T.
50 Ω Input
Sampling
Oscilloscope
50 Ω Output
Pulse
Generator
90%
iR(REC) = 3.0 mA
VR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
IR
INPUT SIGNAL
at i R(REC) = 3.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes : 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
IR, REVERSE CURRENT (µ A)
IF, FORWARD CURRENT (mA)
1000
100
10
1.0
1.0
0.1
0.01
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
200
250
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Current
Figure 3. Leakage Current
2.0
3.1
1.8
3.0
1.6
f = 1 MHz
1.4
IE = 0 A
TA = 25°C
1.2
VF, FORWARD VOLTAGE (V)
CT, TOTAL CAPACITANCE (pF)
10
1.0
0.8
0.6
0.4
0.2
300
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
0
0
5.0
10
15
20
25
30
35
0
25
50
75
100
125
150
175
200
VR, REVERSE VOLTAGE (V)
IF, FORWARD CURRENT (mA)
Figure 4. Total Capacitance
Figure 5. Forward Voltage
225
250
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBAS20HT1G,S-LBAS20HT1G
SOD−323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
A3
A
L
NOTE 5
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
A1
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
GENERIC
MARKING DIAGRAM*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
xx M
xx
M
C
NOTE 3
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
xx = Specific Device Code
M = Date Code
Rev.O 3/3