QS5U21 Transistor Small switching (–20V, –1.5A) QS5U21 zExternal dimensions (Units : mm) 1.0MAX 1.9 + − 0.2 0.85+0.1 − 0.7+ − 0.1 0.95 0.95 (4) + 0.2 2.8 − (5) 0 to 0.1 (1) (2) 0.4 +0.1 −0.05 (3) Each lead has same dimensions zApplications Load switch, DC/DC conversion zEquivalent circuit (5) (4) ∗2 (1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE zPackaging specifications Package 0.16+0.1 −0.06 Abbreviated symbole : U21 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE Type 0.3 to 0.6 2.9 −+ 0.1 + 0.2 1.6 − 0.1 zFeatures 1) The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate. Taping ∗1 TR Code Basic ordering unit (pieces) 3000 (1) QS5U21 (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE zAbsolute maximum ratings (Ta=25°C) < MOSFET > Symbol Limits DRAIN−SOURCE VOLTAGE Parameter VDSS −20 V GATE−SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT PULSED VGSS ID ±12 ±1.5 V IDP ±6.0 A IS −0.75 A SOURCE CURRENT (BODY DIODE) CONTINUOUS Unit A ISP −0.3 A Tch 150 C REPETITIVE PEAK REVERSE VOLTAGE REVERSE VOLTAGE FORWARD CURRENT VRM VR IF 25 20 1.0 V V A FORWARD CURRENT SURGE PEAK JUNCTION TEMPERATURE IFSM Tj 3.0 125 A C TOTAL POWER DISSIPATION PD 1.0 RANGE OF STRAGE TEMPERATURE Tstg −40∼125 PULSED CHANNEL TEMPERATURE PW< =10µs DUTY CYCLE < =1% PW< =10µs DUTY CYCLE < =1% < Di > 60HZ / 1CYC. < MOSFET AND Di > W/TOTAL/MOUNTED ON A CERAMIC BOARD C 1/4 QS5U21 Transistor zElectrical characteristics (Ta=25°C) < MOSFET > Parameter Symbol Min. Typ. Max. Unit Conditions − − ±10 µA VGS=±12V/ VDS=0V −20 − − V ID=−1mA/ VGS=0V IDSS − − −1 µA VDS=−20V/ VGS=0V VGS(th) −0.7 − −2.0 V VDS=−10V/ ID=−1mA − 160 200 mΩ ID=−1.5A, VGS=−4.5V − 180 240 mΩ ID=−1.5A, VGS=−4V − 260 340 mΩ ID=−0.75A, VGS=−2.5V Yfs ∗Pulsed Ciss 1.0 − − S VDS=−10V, ID=−0.75A − 325 − pF VDS=−10V Coss − 60 − pF VGS=0V Crss td(on) ∗Pulsed tr ∗Pulsed td(off) ∗Pulsed tf ∗Pulsed − 40 − pF f=1MHz − 10 − ns − 10 − ns − 35 − ns − 10 − ns ID=−0.75A VDD −15 VGS =−4.5V RL=20Ω RGS=10Ω Total gate charge Qg − 4.2 − nC VDD Gate−source charge Qgs − 1.0 − nC VGS =−4.5V Gate−drain charge Qgd − 1.1 − nC ID=−1.5A VSD − − −1.2 V IS=−0.75A/ VGS=0V Foward voltage drop VF − − 0.45 V IF=1.0A Reverse leakage IR − − 200 µA VR=20V Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate threshold voltage Static drain−source on−state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn−on delay time Rise Time Turn off delay time Fall time RDS(on) ∗Pulsed −15V < MOSFET >Body diode(source−drain) Forward voltage < Di > 2/4 QS5U21 Transistor 10 Static Drain−Source On−State Resistance RDS(on)[mΩ] 1 Ta=125°C 75°C 25°C −20°C 0.1 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 Ta=125 C 75 C 25 C −25 C 10 0.1 4.0 1 Ta=125 C 75 C 25 C −25 C 10 0.1 1 Fig.3 Static Drain−Source On−State Resistance vs.Drain Current ID=−0.75A −1.5A 250 200 150 100 50 0 2 4 6 8 10 Capacitance : C [pF] Ta=125 C 75 C 25 C −25 C 0.1 100 VGS=−2.5V −4.0V −4.5V 10 0.1 12 10 1 Drain Current : −ID[A] Fig.6 Static Drain−Source On−State Resistance vs.Drain Current Fig.5 Static Drain−Source On−State Resistance vs.Gate−Source Voltage 10000 1 Ta=25 C Pulsed Gate−Source Voltage : −VGS[V] VGS=0V Pulsed 10 1000 300 0 10 Fig.4 Static Drain−Source On−State Resistance vs.Drain−Current Reverse Drain Current : −IDR[A] 1 Drain Current : −ID[A] Ta=25 C Pulsed 350 Drain Current : −ID[A] 10 Ta=125 C 75 C 25 C −25 C 10 0.1 10 400 VGS=−2.5V Pulsed Static Drain−Source On−State Resistance RDS(on)[mΩ] Static Drain−Source On−State Resistance RDS(on)[mΩ] 100 100 Fig.2 Static Drain−Source On−State Resistance vs.Drain Current Fig.1 Typical Transfer Characteristics 1000 VGS=−4V Pulsed Drain Current : −ID[A] Gate−Source Voltage : VGS[V] Static Drain-Source On−State Resistance RDS(on)[mΩ] 0 VGS=−4.5V Pulsed Ta=25 C f=1MHZ VGS=0V 1000 Switching Time : t [ns] Drain Current : −ID (A) 1000 1000 VDS=−10V Pulsed 0.001 Static Drain−Source On−State Resistance RDS(on)[mΩ] zElectrical characteristic curves 1000 Ciss 100 Ta=25 C VDD=−15V VGS=−4.5V RG=10Ω Pulsed 100 td(off) 10 tf td(on) Coss tr Crss 0.01 0 0.5 1.0 1.5 2.0 10 0.01 0.1 1 10 100 1 0.01 0.1 1 Source−Drain Voltage : −VSD[V] Drain−Source Voltage : −VDS[V] Drain Current : −ID[A] Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capactitance vs.Drain−Source Voltage Fig.9 Switching Characteristics 10 3/4 QS5U21 Transistor Ta=125 C 75 C 25 C −25 C Forward Current : IF [mA] Gate-Source Voltage: -VGS [V] 6 100 1000 Ta=25 C VDD=−15V ID=−2.5A RG=10Ω Pulsed 7 5 4 3 2 125 C Reverse Current : IR[A] 8 100 10 10 75 C 1 0.1 25 C 0.01 1 −25 C 0.001 1 0 0.1 0 1 2 3 4 5 6 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 Forward Voltage :VF [V] 10 20 30 40 Reverse Voltage : VR[V] Total Gate Charge : Qg[nC] Fig.10 Dynamic Input Characteristics Fig.11 Forward Temperature Characteristics Fig.12 Reverse Temperature Characteristics zMeasurement circuits Pulse Width VGS 10% 50% 50% 90% 10% 10% VGS ID D.U.T. RG VDS 90% 90% VDS RL VDD td(on) tr tf td(off) ton toff Fig.14 Switching Waveforms Fig.13 Switching Time Measurement Circuit VG Qg VGS VGS ID VDS Qgs IG(Const) RG D.U.T. Qgd RL VDD Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveforms 4/4