ROHM VT6K1

Data Sheet
1.2V Drive Nch + Nch MOSFET
VT6K1
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
1.2
Features
1) Low on-resistance.
2) Small package(VMT6).
3) Low voltage drive(1.2V drive).
1.2
(6)
0.5
(5) (4)
0.92
0.14
VMT6
0.14
(1)
(2) (3)
0.16
0.13
0.4 0.4
0.8± 0.1
Abbreviated symbol : K01
 Application
Switching
 Inner circuit
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
VT6K1
Taping
T2CR
8000

(6)
Drain-source voltage
VDSS
Gate-source voltage
VGSS
ID
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
IDP
*1
PD
*2
Tch
Tstg
(4)
∗1
∗2
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
(5)
Limits
Unit
20
8
100
V
V
mA
400
mA
∗2
∗1
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
0.15
W / TOTAL
0.12
W / ELEMENT
150
C
55 to 150
C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
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1/5
2011.08 - Rev.A
Data Sheet
VT6K1
 Electrical characteristics (Ta = 25C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
IGSS
-
-
10
A
VGS=8V, VDS=0V
20
-
-
V
ID=1mA, V GS=0V
Drain-source breakdown voltage V (BR)DSS
Zero gate voltage drain current
Gate threshold voltage
Conditions
IDSS
-
-
1
A
VDS=20V, VGS=0V
VGS (th)
0.3
-
1.0
V
VDS=10V, ID=100A
-
2.5
3.5
-
3.0
4.2
-
3.8
5.3
-
4.5
9.0
ID=100mA, VGS=4.5V
ID=100mA, VGS=2.5V
Static drain-source on-state
resistance
RDS (on)*
-
6.0
18.0
Forward transfer admittance
l Yfs l *
180
-
-
mS VDS=10V, ID=100mA

ID=50mA, VGS=1.8V
ID=20mA, VGS=1.5V
ID=10mA, VGS=1.2V
Input capacitance
Ciss
-
7.1
-
pF
VDS=10V
Output capacitance
Coss
-
3.3
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
1.7
-
pF
f=1MHz
Turn-on delay time
td(on)*
-
5
-
ns
VDD 10V, I D=50mA
tr *
-
4
-
ns
VGS=4.5V
td(off)*
-
20
38
-
ns
ns
RL=200
RG=10
Min.
Typ.
Max.
-
-
1.2
Rise time
Turn-off delay time
Fall time
tf *
*Pulsed
Body diode characteristics (Source-Drain)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Forward Voltage
Symbol
VSD *
Unit
V
Conditions
Is=100mA, VGS=0V
*Pulsed
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2/5
2011.08 - Rev.A
Data Sheet
VT6K1
Electrical characteristic curves
0.1
0.1
0.06
0.08
DRAIN CURRENT : ID[A]
DRAIN CURRENT : ID[A]
0.08
VGS= 1.2V
0.04
1
VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V
0.02
VDS= 10V
Pulsed
Ta=25°C
Pulsed
0.06
DRAIN CURRENT : ID[A]
VGS= 4.5V
VGS= 4.0V
VGS= 2.5V
VGS= 1.8V
VGS= 1.5V
VGS= 1.2V
0.04
0.02
0.1
0.01
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.001
Ta=25°C
Pulsed
0
0
0
0.2
0.4
0.6
0.8
0.0001
0
1
2
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
8
10
VGS= 1.2V
VGS= 1.5V
VGS= 1.8V
VGS= 2.5V
VGS= 4.5V
10000
.
1000
100
0.0001
0.001
0.01
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1000
0.001
0.01
0.1
0.001
0.01
0.1
1000
0.001
1
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100000
VGS= 1.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
100
0.0001
10000
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
VGS= 2.5V
Pulsed
100
0.0001
1
100000
10000
2
Fig.3 Typical Transfer Characteristics
10000
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1.5
Fig.2 Typical Output Characteristics(Ⅱ)
DRAIN-CURRENT : ID[A]
100000
1
100000
DRAIN-CURRENT : ID[A]
VGS= 1.8V
Pulsed
0.5
GATE-SOURCE VOLTAGE : VGS[V]
VGS= 4.5V
Pulsed
100
0.0001
1
0
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
6
100000
100000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
4
1000
100
0.0001
0.001
0.01
0.1
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅴ)
3/5
1
VGS= 1.2V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
10000
1000
100
0.0001
0.001
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
2011.08 - Rev.A
10000
1
VDS= 10V
Pulsed
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VGS=0V
Pulsed
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.01
0.1
1
Ta=25℃
Pulsed
8000
ID= 0.01A
6000
ID= 0.1A
4000
2000
0
0
0.5
1
1.5
DRAIN-CURRENT : ID[A]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
1000
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
tf
100
CAPACITANCE : C [pF]
Ta=25°C
VDD=10V
VGS=4.5V
RG=10Ω
Pulsed
td(off)
SWITCHING TIME : t [ns]
Data Sheet
VT6K1
td(on)
10
Ta=25°C
f=1MHz
VGS=0V
Ciss
10
Crss
tr
Coss
1
1
0.01
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
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0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
4/5
2011.08 - Rev.A
Data Sheet
VT6K1
 Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
 Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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5/5
2011.08 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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R1120A