RENESAS BCR5PM-12L

BCR5PM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0460-0300
Rev.3.00
Mar 06, 2007
Features
• IT (RMS) : 5 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTIII : 20 mA (10 mA)Note5
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
2 3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general controlling device
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.3.00
Mar 06, 2007
page 1 of 7
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 120°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
IDRM
VTM
—
—
—
—
2.0
1.8
mA
V
Tj = 150°C, VDRM applied
Repetitive peak off-state current
On-state voltage
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
20Note5
20Note5
20Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
4.0
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.3.00
Mar 06, 2007
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
101
7
5
3
2
Tj = 150°C
100
7
5
3
2
–1
Gate Voltage (V)
60
50
40
30
20
10
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
7
PG(AV) =
5
0.3W
3 VGT = 1.5V
2
PGM = 3W
IGM = 2A
IGT = 20mA
10–1
VGD = 0.1V
7
5 1
2
10 2 3 5 710 2 3 5 7103 2 3 5 7104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
70
Conduction Time (Cycles at 60Hz)
1
103
7
5
3
2
2
Typical Example
IRGT III
102
7
5
3
2 IFGT I
IRGT I
101
7
5
3
2
100
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
2
10
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.3.00
80
On-State Voltage (V)
5
3
2 VGM = 10V
100
7
5
3
2
90
0 0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
Tj = 25°C
Surge On-State Current (A)
100
10
7
5
3
2
Mar 06, 2007
page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
2
10
4.0
2
2 3 5 710
3
2 3 5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
Conduction Time (Cycles at 60Hz)
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1 1
10
2
3
On-State Power Dissipation (W)
No Fins
4
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
9
8
7
6
5
4
3
2
1
0
0
5
2
3
4
5
6
7
8
9 10
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
160
1
2
3
120 × 120 × t2.3
140
100 × 100 × t2.3
120
60 × 60 × t2.3
100
80
All fins are black
60 painted aluminum
and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
inductive loads
0
0
Natural convection
4
5
6
7
0
0
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Mar 06, 2007
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
RMS On-State Current (A)
160
Ambient Temperature (°C)
1
RMS On-State Current (A)
20 Resistive,
Rev.3.00
360° Conduction
Resistive,
inductive loads
Conduction Time (Cycles at 60Hz)
160
Case Temperature (°C)
Maximum On-State Power Dissipation
3
Ambient Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
106
7
5
3
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Holding Current vs.
Junction Temperature
VD = 12V
Distribution
3
2
Typical Example
101
7
5
3
2
Latching Current (mA)
Holding Current (mA)
102
7
5
Latching Current vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3
2
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rev.3.00
T2+, G+
Typical Example
T2–, G–
100
–60 –40–20 0 20 40 60 80 100 120 140 160
Mar 06, 2007
page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
100
–60 –40–20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
3 Minimum
Characteristics
2 Value
100
7 0
10
III Quadrant
2 3
5 7 10
1
2 3
5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
2
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
I Quadrant
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
3
2
Minimum
Characteristics
Value
0
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Typical Example
IRGT III
3
IRGT I
2
102
7
5
IFGT I
3
2
1
10 0
10
2 3
5 7 101
2 3
5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
Load
6Ω
6Ω
3
10
7
5
C1
A
6V
330Ω
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
Rev.3.00
Mar 06, 2007
page 6 of 7
C0
R0
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
JEITA Package Code
SC-67
Package Name
TO-220F
Previous Code

RENESAS Code
PRSS0003AA-A
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name +B
Type name +B – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.3.00
Mar 06, 2007
page 7 of 7
Standard order
code example
BCR5PM-12LB
BCR5PM-12LB-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0