RENESAS BCR8CS-12LA-T11

BCR8CS-12LA
Triac
Medium Power Use
REJ03G0338-0300
Rev.3.00
Nov 30, 2007
Features
• IT (RMS) : 8 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
4
1
2, 4
3
2
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
3
Applications
Solid state relay, hybrid IC
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G0338-0300
Page 1 of 6
Rev.3.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR8CS-12LA
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2 t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
– 40 to +125
– 40 to +125
1.2
W
W
V
A
°C
°C
g
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30Note6
30Note6
30Note6
—
2.0
V
V
V
mA
mA
mA
V
°C/W
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
10
—
—
V/µs
Tj = 125°C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 105°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note5
commutating voltage
Notes: 2.
3.
4.
5.
6.
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T2 tab.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G0338-0300
Page 2 of 6
Rev.3.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR8CS-12LA
Performance Curves
102
7
5
3
2
Rated Surge On-State Current
100
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
5
3
2
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
60
50
40
30
20
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
IFGT I IRGT I, IRGT III
VGD = 0.2V
10 –1
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
102
7
5
4
3
2
Typical Example
IRGT III
IRGT I, IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
7
5
4
3
2
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
REJ03G0338-0300
Page 3 of 6
103
7
5
4
3
2
Gate Current (mA)
103
7
5
4
3
2
101
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
Rev.3.00
Nov 30, 2007
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
70
On-State Voltage (V)
3
2 VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
101
7
5
3
2
90
102 2 3 5 7 103
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR8CS-12LA
Allowable Case Temperature vs.
RMS On-State Current
16
160
14
140
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
120
120 × 120 × t2.3
100
100 × 100 × t2.3
60 × 60 × t2.3
80
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
2
4
6
8
10
12
14
Ambient Temperature (°C)
All fins are black painted
140 aluminum and greased
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
16
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
-60 -40 -20 0 20 40 60 80 100 120 140
REJ03G0338-0300
Page 4 of 6
Junction Temperature (°C)
Rev.3.00
Nov 30, 2007
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Ambient Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
120
RMS On-State Current (A)
160
0
Curves apply regardless
of conduction angle
3.0
103
Typical Example
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
103
3
2
Distribution
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
100
–40
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
T2+, G–
Typical Example
102
0
40
80
120
160
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
-60 -40 -20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics
7
5
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Latching Current (mA)
7
5
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
BCR8CS-12LA
3
2
101
7
5
3
2
100
7 0
10
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
7
5
4
3
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Minimum
Characteristics
Value
I Quadrant
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
IFGT I
IRGT I
2
IRGT III
102
7
5
4
3
2
A
6V
V
6Ω
A
6V
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
REJ03G0338-0300
Page 5 of 6
Rev.3.00
Nov 30, 2007
V
V
330Ω
Test Procedure II
Test Procedure I
101 0
10
A
6V
330Ω
330Ω
Test Procedure III
BCR8CS-12LA
Package Dimensions
Previous Code
TO-220S
RENESAS Code
PRSS0004AB-A
1.5Max
+0.3
3.0 –0.5
Unit: mm
4.5
1.5Max
10.5Max
MASS[Typ.]
1.2g
1.3
0
+0.3
–0
(1.5)
JEITA Package Code
SC-83
8.6 ± 0.3
9.8 ± 0.5
Package Name
TO-220S
1
5
0.5
2.6 ± 0.4
4.5
0.8
Order Code
Lead form
Surface-mounted type
Surface-mounted type
Standard
packing
Taping
Quantity
Plastic Magazine
(Tube)
1000
50
Type name – T +Direction (1 or 2) +1
Standard order
code example
BCR8CS-12LA-T11
Type name
BCR8CS-12LA
Standard order code
Note : Please confirm the specification about the shipping in detail.
REJ03G0338-0300
Page 6 of 6
Rev.3.00
Nov 30, 2007
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Colophon .7.2