BCR8CS-12LA Triac Medium Power Use REJ03G0338-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 8 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 1 2, 4 3 2 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 3 Applications Solid state relay, hybrid IC Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0338-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR8CS-12LA Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) VGM IGM Tj Tstg — 5 0.5 10 2 – 40 to +125 – 40 to +125 1.2 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V Test conditions Tj = 125°C, VDRM applied VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) — — — — — — 0.2 — — — — — — — — — 1.5 1.5 1.5 30Note6 30Note6 30Note6 — 2.0 V V V mA mA mA V °C/W Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 10 — — V/µs Tj = 125°C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0338-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR8CS-12LA Performance Curves 102 7 5 3 2 Rated Surge On-State Current 100 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 7 5 3 2 Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V 100 7 5 3 2 IFGT I IRGT I, IRGT III VGD = 0.2V 10 –1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 102 7 5 4 3 2 Typical Example IRGT III IRGT I, IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) Typical Example 102 7 5 4 3 2 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) REJ03G0338-0300 Page 3 of 6 103 7 5 4 3 2 Gate Current (mA) 103 7 5 4 3 2 101 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction Time (Cycles at 60Hz) Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) Gate Voltage (V) 70 On-State Voltage (V) 3 2 VGM = 10V Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 80 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 101 7 5 3 2 90 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR8CS-12LA Allowable Case Temperature vs. RMS On-State Current 16 160 14 140 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 16 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 120 120 × 120 × t2.3 100 100 × 100 × t2.3 60 × 60 × t2.3 80 60 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 40 20 0 2 4 6 8 10 12 14 Ambient Temperature (°C) All fins are black painted 140 aluminum and greased Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 16 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 REJ03G0338-0300 Page 4 of 6 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Ambient Temperature (°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 120 RMS On-State Current (A) 160 0 Curves apply regardless of conduction angle 3.0 103 Typical Example 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Latching Current vs. Junction Temperature 103 3 2 Distribution 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –40 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) T2+, G– Typical Example 102 0 40 80 120 160 Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics 7 5 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Latching Current (mA) 7 5 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) BCR8CS-12LA 3 2 101 7 5 3 2 100 7 0 10 Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 7 5 4 3 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value I Quadrant III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6Ω 6Ω IFGT I IRGT I 2 IRGT III 102 7 5 4 3 2 A 6V V 6Ω A 6V 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) REJ03G0338-0300 Page 5 of 6 Rev.3.00 Nov 30, 2007 V V 330Ω Test Procedure II Test Procedure I 101 0 10 A 6V 330Ω 330Ω Test Procedure III BCR8CS-12LA Package Dimensions Previous Code TO-220S RENESAS Code PRSS0004AB-A 1.5Max +0.3 3.0 –0.5 Unit: mm 4.5 1.5Max 10.5Max MASS[Typ.] 1.2g 1.3 0 +0.3 –0 (1.5) JEITA Package Code SC-83 8.6 ± 0.3 9.8 ± 0.5 Package Name TO-220S 1 5 0.5 2.6 ± 0.4 4.5 0.8 Order Code Lead form Surface-mounted type Surface-mounted type Standard packing Taping Quantity Plastic Magazine (Tube) 1000 50 Type name – T +Direction (1 or 2) +1 Standard order code example BCR8CS-12LA-T11 Type name BCR8CS-12LA Standard order code Note : Please confirm the specification about the shipping in detail. REJ03G0338-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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