ISL8130EVAL3Z User Guide

Application Note 1771
Author: Manjing Xie
ISL8130EVAL3Z - Sepic Converter
Introduction
Features
ISL8130EVAL3Z is a sepic converter, which features the
universal PWM controller, ISL8130. The evaluation board
delivers 10V output at 2A. All the necessary components are
within the 1.78” x 1.24” PCB area.
• Operates From:
- 4.5V to 5.5V Input for 5V Input
- 5.5V to 16V Input
The ISL8130 is designed to drive N-Channel MOSFETs in a
synchronous rectified buck topology for up to 25A instant
MOSFET current and can be configured for boost, buck/boost
and sepic converters as well. The ISL8130 integrates control,
output adjustment, monitoring and protection functions into a
single package. The ISL8130 provides simple, voltage mode
control with fast transient response.
This application note describes how to use the ISL8130 to
generate VOUT from power supply of voltage either higher or
lower than the VOUT.
Evaluation Board Specifications
• Resistor-Selectable Switching Frequency from 100kHz to
1.4MHz
• Voltage Margining and External Reference Tracking Modes
• Kelvin Current Sensing
- Upper MOSFET rDS(ON) for Current Sensing for Buck and
Buck/Boost Converter
- Precision Resistor/Inductor DCR for Boost and Sepic
Converter
• Extensive Protection Functions:
- Overvoltage, Overcurrent, Undervoltage
• Power Good Indicator
TABLE 1. EVALUATION BOARD ELECTRICAL SPECIFICATIONS
SPEC
DESCRIPTION
MIN
TYP
MAX
UNIT
5.6
10
16
V
VIN
Board Input Range
IOC
Input Current
VOUT
IOUT = 0A
9.5
IOUT
VIN = 5.6V
2
5
A
10
10.5
V
A

VIN = 5.6V, IOUT = 2A
88.6
%

VIN = 8.4V, IOUT = 2A
90.3
%
Recommended Equipment
The following equipment is recommended for evaluation:
• 0V to 20V power supply with 10A source current capability
• Electronic load capable of sinking 2A @ 20V
• Digital Multi meters (DMMs)
• 100MHz Quad-Trace Oscilloscope
FIGURE 1. ISL8130EVAL3Z TOP VIEW
TABLE 2. RECOMMENDED COMPONENT SELECTION FOR QUICK EVALUATION
VOUT
(V)
R4
(k)
VIN
(V)
IOUT
(A)
FSW(kHz)/R5(k)
MOSFET
FORWARD DIODE
INDUCTOR (L, ISAT
MEASURED IN
PARALLEL)
7
9.53
5.6 to 14
2
500kHz/28.7k
BSO051N03 MS
SL43
4.7µH, 6A
10
6.34
5.6 to 16
2
500kHz/28.7k
BSC059N04 LS
SL42
4.7µH, 7A
12
5.23
5.6 to 14
2
500kHz/28.7k
BSC057N03 LS
SL42
4.7µH, 9A
NOTES:
1. Please select the output capacitor with a voltage rating higher than the output.
2. Please contact Intersil Sales for assistance.
August 7, 2012
AN1771.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Copyright Intersil Americas Inc. 2012. All Rights Reserved.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Application Note 1771
FIGURE 2. ISL8130EVAL3Z TEST SET-UP
Quick Test Setup
Probe Set-up
1. Ensure that the Evaluation board is correctly connected to the
power supply and the electronic load prior to applying any
power. Please refer to Figure 2 for proper set-up.
2. Leave JP3 in the open position.
3. Turn on the power supply; VIN< 16V.
OUTPUT
CAP
OUTPUT
OUTPUT
CAP
CAP
OR
ORMOSFET
MOSFET
4. Adjust input voltage VIN within the specified range and
observe output voltage. The output voltage variation should
be within 5%.
5. Adjust load current within 2A. The output voltage variation
should be within 5%.
6. Use oscilloscope to observe output ripple voltage and phase
node ringing. For accurate measurement, please refer to
Figure 3 for proper probe set-up.
FIGURE 3. OSCILLOSCOPE PROBE SET-UP
VOUT Setting
The output voltage is set by the resistor divider, R4 and R1.
7. Optimization. Please refer to Table 2 on page 1 for
optimization recommendation.
R4 + R1
V OUT = --------------------  0.6V
R4
8. For 5V input applications, please tie the VCC5V to VIN and do
not allow VIN to go above 5.5V.
Resistor R11 is a resistor jumper for loop gain measurement. It is
recommended to set R11 = 50 for loop gain measurement.
NOTE: Test points: VIN+, VIN-, VO+ and VO- are for voltage measurement
only. Do not allow high current through these test points.
(EQ. 1)
Component Selection
Component Voltage Stress
The controller, ISL8130, the input capacitors and the flying
capacitors, C18 and C19, see the input voltage. MOSFET and
forward diode see the voltage stress of VIN + VOUT.
Duty Cycle Calculation
The duty cycle of the sepic converter can be estimated using
Equation 2.
V OUT + V F
D = ---------------------------------------V IN + V OUT + V F
(EQ. 2)
Where: VF is the forward voltage of the diode, D1.
2
AN1771.1
August 7, 2012
Application Note 1771
Given:
The OC threshold should be higher than the peak input winding
current at maximum load current. The maximum peak inductor
usually occurs at VINmin and can be calculated by Equation 9.
VIN = 8.4V, VOUT = 10V, VF = 0.5V
We have nominal duty cycle of 44.4%.
Maximum duty cycle and minimum duty cycle can be estimated
by Equation 3 and Equation 4 respectively.
V OUT + V F
D max = -------------------------------------------------V INmin + V OUT + V F
(EQ. 3)
V OUT + V F
D min = --------------------------------------------------V INmax + V OUT + V F
(EQ. 4)
A coupled inductor with 1:1 turns ratio is recommended for sepic
converter. Such a coupled inductor is specified in two ratings; the
parallel ratings and the series ratings. In this application note,
inductor parameters refers to the parallel rating unless otherwise
noted.
It is recommended to select inductor so that the ripple current to
DC current ratio is between 30% to 50%. For low-core-loss
magnetic material, higher ripple ratio would ease the
compensation design and help to reduce the size of the inductor.
Please refer to Equation 5 for recommended inductor value:
(EQ. 5)
Where D is the duty cycle, iR is the inductor ripple ratio, Iomax is
the maximum load current. With Iomax = 2A, FSW = 500kHz,
iR= 40%. The recommended inductance is 5.18H. The DC
magnetizing current of the coupled inductor can be estimated by:
I Omax
I INDmax = -----------------------1 – D max
(EQ. 9)
Refer to Equation 10 for RCS calculation.
R SEN  I OCSET  min 
R CS  ---------------------------------------------------I INPK
(EQ. 10)
Where: IOCSET is the OCSET pin sinking current for overcurrent
detection. The IOCSET(min) = 80A.
The maximum overcurrent threshold can be calculated by
Equation 11.
Coupled Inductor Selection
V IN
L P = -------------------------------------------------  D   1 – D 
i R  I Omax  F SW
V OUT + V F 1  V OUT + V F    1 – D max 
I INPK = I Omax  ------------------------- + ---  ----------------------------------------------------------------V INmin
L P  F SW
4
R SEN  I OCSET  max 
I OCmax = ----------------------------------------------------R CS
(EQ. 11)
Where IOCSET(max) = 120A. When input winding current
reaches the OC threshold, the inductor peak magnetizing current
can be estimated by Equation 12.
I OCmax 1  V OUT + V F    1 – Dmin  1 – 2  Dmin
I OCMAG = ------------------- – ---  ----------------------------------------------------------------  ---------------------------------4
L P  F SW
D min
Dmin
(EQ. 12)
The RCS should be rated for the power loss at the maximum OC
trip point.
For most accurate current sensing setting, please use Kelvin
connection for OCSET and ISEN pins. Please refer to Figure 4 for
reference.
(EQ. 6)
The peak magnetizing current is:
1  V OUT + V F    1 – D max 
I INDPK = I INDmax + ---  ----------------------------------------------------------------L F
2
P
(EQ. 7)
SW
The inductor should be of saturation current higher than that
calculated by Equation 7. DRC127-4R7 is selected with actual
inductance of 4.7H.
It is recommended to select inductor with saturation current
higher than the maximum overcurrent threshold. Please refer to
“Current Sensing” on page 3 for details.
Current Sensing
FIGURE 4. ISL8130 CURRENT SENSING LAYOUT EXAMPLE
For accurate overcurrent detection, it is recommended to set the
voltage across the current sensing resistor, RCS higher than
50mV. Taking variation into consideration, when precision
current sensing resistor is used, RSEN = 665.
The DC current of the output winding can be estimated by:
V OUT + V F
I INWIND = I Omax  ------------------------V
(EQ. 8)
INmin
3
Output Capacitors
It is recommended to use a combination of aluminum capacitors
with high capacitance and low ESR ceramic capacitors at the
output for optimum ripple and load transient performance.
The low ESL and ESR ceramic capacitors should be placed close
to the MOSFET and diode. The loop formed by the MOSFET, the
flying capacitors, C18 and C19, the forward diode and the output
ceramic capacitors should be minimized as short as possible.
AN1771.1
August 7, 2012
Application Note 1771
When selecting the output capacitors, there are two important
requirements: the ripple current and the stability.
The output RMS current worst case occurs at VINmin and
maximum load. See Equation 13 for output ripple current
calculation:
1
I ORMS = I OUT  -----------------------1 – D max
(EQ. 13)
Given:
Flying Capacitors
High ripple current rated ceramic capacitors are preferred for the
flying capacitors. The flying capacitor ripple current is at
maximum when VIN = VINmin and can be estimated by
Equation 17:
V OUT + V F
I FLYRMS = I OUT  ------------------------V INmin
(EQ. 17)
Given:
VOUT = 10V, IOUT = 2A, VINmin = 5.6V
VOUT = 10V, IOUT = 2A, VINmin = 5.6V
Dmax = 65.7%
We have:
We have:
IFLYRMS = 2.74A
IORMS = 3.417A
For applications with FSW < 1MHz, it is still rule of thumb that the
aluminum electrolytic capacitors take the ripple current. Please
select electrolytic capacitors with ripple current greater than the
maximum IORMS, as calculated by Equation 13.
The other important factor is stability. The right-half-plane zero,
fRHP of a sepic converter imposes a big challenge for stability. It
is recommended to set cross over frequency below the fRHP and
above the boost converter natural resonant frequency, fN. It is
recommended to use sufficient output capacitors so that the fN
is much lower than fRHP. Equation 14 is provided for total output
capacitance estimation.
 I Omax  2
C out   ------------------  L P  400
 V INmin
Please select flying capacitor with ripple current higher than
IFLYRMS. The flying capacitor would also resonate with the
leakage inductor of the coupled inductor. It is recommended to
use sufficient CFLY so that the resonating frequency be lower
than half of the switching frequency.
The leakage inductance can be measured in the setup shown in
Figure 5.
(EQ. 14)
For right-half-plane zero calculation, fRHP:
V in   1 – D 
f RHP = -----------------------------------2  I OUT  L P
(EQ. 15)
For sepic converter natural resonant frequency, fN:
1–D
f N = -----------------------------------------2  C OUT  L P
FIGURE 5. LEAKAGE INDUCTANCE MEASUREMENT SETUP
(EQ. 16)
Equation 18 gives the recommended CFLY:
2 1
1
C FLY   --------------------  -----  F 
LS
SW
(EQ. 18)
Given LS = 0.1H and FSW = 500kHz, the recommended CFLY
should be greater than 4.4F. When ceramic capacitors are used,
attention should be paid to the DC degrading characteristic.
Please contact capacitor vendor for more details.
4
AN1771.1
August 7, 2012
Application Note 1771
Typical Performance Curves
92
90
86
VOUT REGULATION (V)
VIN = 5.6V
88
EFFICIENCY (%)
10.4
VIN = 8.4V
VIN = 16V
84
82
80
10.3
10.1
10
9.8
76
9.7
0
0.4
0.8
1.2
LOAD CURRENT(A)
1.6
2.0
9.6
VIN = 16V
VIN = 8.4V
9.9
78
74
VIN = 5.6V
10.2
0
0.4
0.8
1.2
1.6
2.0
LOAD CURRENT(A)
FIGURE 6. EFFICIENCY vs LOAD CURRENT
FIGURE 7. VOUT LOAD REGULATION
VO(AC) AT 100mV/DIV
TIME AT 2µs/DIV
FIGURE 8. OUTPUT RIPPLE (V IN = 5.6V, LOAD = 2A, 20MHz BW)
VO(AC) AT 100mV/DIV
TIME AT 2µs/DIV
FIGURE 9. OUTPUT RIPPLE (V IN = 8.4V, LOAD = 2.A, 20MHz BW)
VIN AT 5V/DIV
VO AT 5V/DIV
VO(AC) AT 500mV/DIV
VEN/SS AT 2V/DIV
PHASE AT 10V/DIV
TIME AT 20ms/DIV
FIGURE 10. SOFT-START (V IN = 5.6V, C SS - 0.47µF)
5
ISTEP AT 1A/DIV
TIME AT 1msec/DIV
FIGURE 11. LOAD TRANSIENT (VIN = 5.6V, LOADSTEP FROM 0.5A to
1.5A)
AN1771.1
August 7, 2012
Application Note 1771
Typical Performance Curves (Continued)
VIN AT 10V/DIV
VIN AT 10V/DIV
VO AT 5V/DIV
VO AT 5V/DIV
VEN/SS AT 2V/DIV
VEN/SS AT 2V/DIV
PHASE AT 20V/DIV
PHASE AT 20V/DIV
TIME AT 50ms/DIV
FIGURE 12. OVERCURRENT PROTECTION (V IN = 16V, I LOAD = 6.6A)
6
TIME AT 50ms/DIV
FIGURE 13. OVERCURRENT PROTECTION (V IN = 5.6V, ILOAD = 3.1A)
AN1771.1
August 7, 2012
ISL8130EVAL3Z Schematic
VIN+
VIN: 5.6V to 16V
1
VCC5
C6
1
VIN
20
1
1
CDEL
1
2
1
2
1
C11
0.1uF
10uF
C17
1
1
2
1
2
25V
1
2
1
Q1
VOUT
C15
DNP
C20
1.0uF
C23
DNP
BSC059N04L
PGND
R22
20k
C26
DNP
VO1
C24
DNP
2
R17
3.3
GND
1
VCC5
1
C10
0.47uF
2
C25
DNP
C27
DNP
1
1
R1 100K
R3
2.2K
2
2
2
2
1
2
1
16SEPC180MX
C14
10uF
C31
180uF
2
C13
0.1uF
1
JP3
1
1
2
4
2
U1
C22
DNP
C30
DNP
5
4 PVCC
1
1
2
SSC54 (or SL42)
3
VOUT
VOUT
2
PGND
PGOOD
1
5
LGATE
ENSS
D1
1
R2
7.5K
COMP
PGOOD
2
ENSS
C1
10nF
PVCC
2
CATHODE ANODE
2
19
PHASE
FB
2
1
50V
1
C2
150pF
COMP 18
RT
0.1u
2
2
1
17
1
6 UGATE
UGATE
VO+
1
VOUT =10V/2A
1
DNP R9
2
2
VCC5 1
FB
BOOT
SGND
PGOOD
1
GND
1
2
3
R5
28.7k
VIN
R14
3.3
SGND
VIN1
GND
2
CS
7
C7
DNP
25V
C18
2
RT 16
8
ISEN
PGOOD
1 PGOOD
GND
2
10uF
VCC5
5.6V to 16V
C29
100uF
Application Note 1771
1
REFIN
VCC5
C9
DNP
3
1
15
2
9
1
VIN1 14
NC
PH11
10
OCSET
2
13
VCC5
1
REFOUT
2
C16
1uF
2
*
C19
1
12
1
4
isl8130
2
DRQ125-4R7-R
*
CDEL
R18
T1
2
REFOUT
7
C4
4.7uF
1
C8
10uF
CS
2
1
1
11
3.3
VIN 1
RCS
5m
619
C12
2.2uF
2
2
1
R8
1
2
R7
100K
2
DNP
2
2
VIN
2
N16246185
R11
1
0
2
C3
2
2
1
2
1000pF
1
R4
6.34K
Disclaimer: THIS EVALUATION BOARD AND MATERIALS ARE PROVIDED ‘AS-IS’ FOR EVALUATION
PURPOSES ONLY. INTERSIL CORPORATION AND ITS SUBSIDIARIES (‘INTERSIL’) DISCLAIM ALL
WARRANTIES, INCLUDING WITHOUT LIMITATION FITNESS FOR A PARTICULAR PURPOSE AND
MERCHANTABILITY. Intersil provides the evaluation platform and design proposals to help
our customers to develop products. However, factors beyond Intersil’s control, including
without limitation component variations, temperature changes and PCB layout, could
significantly affect Intersil product performance. It remains the customers'
responsibility to verify the actual circuit performance.
Intersil Corporation
1001 Murphy Ranch Road
Milpitas, CA 95035
Size
B
Date:
Title
Rev
A
ISL8130EVAL3Z SEPIC
Monday , July 02, 2012
Sheet
1
of
1
AN1771.1
August 7, 2012
Application Note 1771
Bill of Materials
ITEM
QTY
REFERENCE
VALUE
DESCRIPTION
PART #
VENDOR
1
1
C1
10nF
Ceramic CAP, NP0 or C0G, 50V, sm0603
Generic
Generic
2
1
C2
150pF
Ceramic CAP, NP0 or C0G, 50V, sm0603
Generic
Generic
3
1
C3
1000pF
Ceramic CAP, NP0 or C0G, 50V, sm0603
Generic
Generic
4
1
C4
4.7µF
Ceramic CAP, X5R, 10V, sm0603
Generic
Generic
5
4
C14, C19, C22, C8
10µF
Ceramic CAP, X5R, 25V, sm1206
Generic
Generic
6
1
C10
0.47µF
Ceramic CAP, X5R, 16V, sm0603
Generic
Generic
7
2
C11, C13
0.1µF
Ceramic CAP, X5R, 16V, sm0603
Generic
Generic
8
1
C12
2.2µF
Ceramic CAP, X5R, 16V, sm0603
Generic
Generic
9
2
C16, C20
1µF
Ceramic CAP, X5R, 16V, sm0603
Generic
Generic
10
1
C17
10µF
Ceramic CAP, X5R, 10V, sm0805
Generic
Generic
11
1
C18
0.1µF
Ceramic CAP, X5R, 50V, sm0805
Generic
Generic
12
1
C29
100µF
Alum Cap, 35V, Ripple Current > 300mA
EEU-FC1V101
Panasonics
13
1
C31
150µF
ALUM CAP, 25V
PLV1E151MDL1TD
Nichicon
14
1
D1
Schottky Diode, 40V, DO-214AB
SSC54
Vishay
15
1
Q1
Single Channel NFET, 40V
BSC059N04L
Infineon
16
1
RCS
10m
Precision RES, SM2010
PMR50HZPFU10L0
ROHM
17
1
R1
100k
Resistor, sm0603, 1%
Generic
Generic
18
1
R2
7.5k
Resistor, sm0603, 1%
Generic
Generic
19
1
R3
2.2k
Resistor, sm0603, 10%
Generic
Generic
20
1
R4
6.34k
Resistor, sm0603, 1%
Generic
Generic
21
1
R5
28.7k
Resistor, sm0603, 1%
Generic
Generic
22
1
R7
100k
Resistor, sm0603, 10%
Generic
Generic
23
1
R8
665
Resistor, sm0603, 1%
Generic
Generic
24
1
R11
0
Resistor, sm0603, 10%
Generic
Generic
25
3
R14, R17, R18
3.3
Resistor, sm0603, 10%
Generic
Generic
26
1
R22
20k
Resistor, sm0603, 1%
Generic
Generic
27
1
T1
4.7µH
1:1 Coupled Inductor
DRQ125-4R7-R
Cooper
28
1
U1
PWM Controller, 20L QSOP
ISL8130IAZ
Intersil
EVALUTION BOARD HARDWARE
29
1
JP3
30
2
VOUT, VIN
31
2
PGND, GND
32
6
VIN+, VO+, VO-,
VIN-, SGND,
PGOOD
jumper_2pin
Generic
Generic
Banana Jack (Red)
111-0703-002
Emerson
Banana Jack (Black)
111-0703-001
Emerson
Test Point
1514-2
Keystone
OPTIONAL COMPONENTS
33
8
C6, C7, C9, C15,
C23, C24, C25,
C26, C27, C30
8
DNP
AN1771.1
August 7, 2012
Application Note 1771
ISL8130EVAL3Z PCB Layout
FIGURE 14. TOP SILKSCREEN
FIGURE 15. TOP LAYER
FIGURE 16. BOTTOM SILKSCREEN
FIGURE 17. BOTTOM LAYER
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
9
AN1771.1
August 7, 2012