DHG 100 X 1200 NA preliminary V RRM = 1200 V I FAV = 2x 50 A t rr = 200 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DHG 100 X 1200 NA Backside: Isolated Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 1200 V 100 µA VR = 1200 V TVJ = 125 °C 1.2 mA IF = TVJ = 25 °C 2.16 V 2.78 V 50 A IF = TVJ = 125 °C 50 A 2.13 V 2.97 V TC = 65°C 50 A TVJ = 150°C 1.26 V I F = 100 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 15.3 mΩ 0.60 K/W 150 °C TC = 25 °C 200 W TVJ = 45°C 500 A -40 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 1200 I F = 100 A VF0 max. TVJ = 25 °C TVJ = 25 °C 60 A; VR = 600 V -di F /dt = 1200 A/µs VR = 600 V; f = 1 MHz TVJ = 25 °C 45 A TVJ = 125°C 60 A TVJ = 25 °C 200 ns TVJ = 125°C 350 ns TVJ = 25 °C 27 pF Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 100 X 1200 NA preliminary Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 °C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Part number D H G 100 X 1200 NA Product Marking abcde Logo YYWW Z Part No. = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Parallel legs Reverse Voltage [V] SOT-227B (minibloc) XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DHG 100 X 1200 NA IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG100X1200NA Delivering Mode Tube Base Qty Code Key 10 507759 Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 100 X 1200 NA preliminary Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110526b DHG 100 X 1200 NA preliminary 120 14 100 12 TVJ = 125°C VR = 600 V 120 A 10 80 IF Qrr 60 [A] 60 A 8 [µC] 6 40 30 A TVJ = 125°C 4 TVJ = 25°C 20 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 600 700 800 VF [V] 900 1000 Fig. 1 Typ. Forward current versus VF 1300 700 TVJ = 125°C 80 120 A TVJ = 125°C 600 VR = 600 V VR = 600 V 70 500 60 A 60 [A] 1200 Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 90 IRR 1100 diF /dt [A/µs] 30 A 50 trr 40 400 120 A 60 A [ns] 300 30 A 30 200 20 100 10 0 600 700 800 900 1000 1100 1200 0 600 1300 700 800 diF /dt [A/µs] 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 4.0 1 TVJ = 125°C 120 A VR = 600 V 3.2 60 A Erec 2.4 [mJ] ZthJC 0.1 30 A 1.6 [K/W] i 1 2 3 4 0.8 0.0 600 700 800 900 1000 1100 1200 1300 diF /dt [A/µs] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved 0.01 0.001 0.01 0.1 Ri 0.137 0.1 0.233 0.130 i 0.0025 0.03 0.03 0.08 1 10 tp [s] Fig. 6 Typ. transient thermal impedance Data according to IEC 60747and per diode unless otherwise specified 20110526b