DPG15I400PM

DPG15I400PM
HiPerFRED²
VRRM
=
400 V
I FAV
=
15 A
t rr
=
45 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG15I400PM
Backside: isolated
3
1
Features / Advantages:
Applications:
Package: TO-220FP
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG15I400PM
Ratings
Fast Diode
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
400
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
400
V
IR
reverse current, drain current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
typ.
VR = 400 V
TVJ = 25°C
1
µA
VR = 400 V
TVJ = 150°C
0.18
mA
TVJ = 25°C
1.39
V
1.63
V
1.14
V
IF =
forward voltage drop
min.
15 A
IF =
30 A
IF =
15 A
IF =
30 A
TVJ = 150 °C
TC = 90°C
rectangular
1.40
V
T VJ = 175 °C
15
A
TVJ = 175 °C
0.84
V
d = 0.5
for power loss calculation only
16.5
mΩ
4.2
K/W
R thCH
thermal resistance case to heatsink
Ptot
total power dissipation
I FSM
max. forward surge current
t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C
CJ
junction capacitance
VR = 200 V f = 1 MHz
TVJ = 25°C
16
pF
I RM
max. reverse recovery current
TVJ = 25 °C
4
A
t rr
reverse recovery time
IF =
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
K/W
0.50
TC = 25°C
15 A; VR = 270 V
-di F /dt = 200 A/µs
35
190
W
A
TVJ = 125°C
5.5
A
TVJ = 25 °C
45
ns
TVJ = 125°C
70
ns
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG15I400PM
Package
Ratings
TO-220FP
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-55
typ.
max.
35
Unit
A
-55
175
°C
-55
150
°C
150
°C
Weight
2
MD
mounting torque
FC
mounting force with clip
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
3.2
terminal to backside
2.5
creepage distance on surface | striking distance through air
t = 1 second
isolation voltage
t = 1 minute
Product Marking
Part Number
Logo
DateCode
Assembly Code
50/60 Hz, RMS; IISOL ≤ 1 mA
g
0.4
0.6
Nm
20
60
N
2.7
mm
2.5
mm
2500
V
2080
V
Part number
D
P
G
15
I
400
PM
abcdef
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Single Diode
Reverse Voltage [V]
TO-220ACFP (2)
YYWW Z
XXXXXX
Assembly Line
Ordering
Standard
Part Number
DPG15I400PM
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
DPG15I400PM
* on die level
Delivery Mode
Tube
Code No.
503814
T VJ = 175 °C
Fast
Diode
V 0 max
threshold voltage
0.84
V
R 0 max
slope resistance *
13.3
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Quantity
50
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG15I400PM
Outlines TO-220FP
E
A
ØP
A1
Q
Dim.
H
D
1
3
L1
A2
d1
L
b1
b
e
c
Note:
All metal surface are
matte pure tin plated
except trimmed area.
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
A
A1
A2
b
b1
c
D
d1
E
e
H
L
L1
ØP
Q
Millimeters
min
max
4.50
4.90
2.34
2.74
2.56
2.96
0.70
0.90
1.27
1.47
0.45
0.60
15.67 16.07
0
1.10
9.96 10.36
2.54 BSC
6.48
6.88
12.68 13.28
3.03
3.43
3.08
3.28
3.20
3.40
Inches
min
max
0.177 0.193
0.092 0.108
0.101 0.117
0.028 0.035
0.050 0.058
0.018 0.024
0.617 0.633
0
0.043
0.392 0.408
0.100 BSC
0.255 0.271
0.499 0.523
0.119 0.135
0.121 0.129
0.126 0.134
1
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG15I400PM
Fast Diode
80
0.4
12
30 A
70
60
0.3
IF = 30 A
10
15 A
IF = 15 A
IF = 7.5 A
IF
50
Qrr
7.5 A
40
[A]
IRM 8
0.2
[A] 6
[μC]
30 TVJ = 25°C
150°C
20
0.1
4
TVJ = 125°C
10
TVJ = 125°C
VR = 270 V
0
0.0
VR = 270 V
0.0
0.5
1.0
1.5
2.0
2.5
2
0
100 200 300 400 500 600
0
-diF /dt [A/μs]
VF [V]
Fig. 1 Forward current
IF versus VF
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
120
1.4
100 200 300 400 500 600
18
TVJ = 125°C
16
VR = 270 V
1.2
450
TVJ = 125°C
100
400
IF = 15 A
VR = 270 V
14
350
1.0
trr
0.8
Kf
IRM
0.6
[ns] 60
IF = 30 A
0.4
300
10
250
[V] 8
200
6
150
15 A
40
Qrr
0.2
12
VFR
80
tfr
[ns]
VFR
4
tfr
7.5 A
2
0.0
20
0
40
80
120
160
TVJ [°C]
100 200 300 400 500 600
0
0
100 200 300 400 500 600
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 4 Dynamic parameters
Qrr, IRM versus TVJ
50
0
0
100
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
Fig. 5 Typ. recovery time
trr versus -diF /dt
4
25
TVJ = 125°C
VR = 270 V
20
3
IF = 30 A
Erec 15
IF = 15 A
ZthJC
2
IF = 7.5 A
[μJ] 10
[K/W]
1
5
0
0
100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
0
0.001
0.01
0.1
1
10
t [s]
Fig. 8 Transient thermal resistance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a