DPJ50XS1800NA advanced HiPerDynFRED VRRM = I FAV = 2x 25 A t rr = 30 ns 1800 V High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Parallel legs with series connected dice Part number DPJ50XS1800NA Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150511a DPJ50XS1800NA advanced Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 IR reverse current, drain current VR = 1800 V TVJ = 25°C 250 µA VR = 1800 V TVJ = 150°C 2 mA TVJ = 25°C 6,99 V 8,72 V 4,33 V VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case IF = 25 A IF = 50 A IF = 25 A IF = 50 A typ. TVJ = 150 °C TC = 90 °C rectangular thCH min. max. Unit 1800 V V 5,83 V T VJ = 150 °C 25 A TVJ = 150 °C 2,92 V 56 mΩ d = 0.5 for power loss calculation only 0,4 K/W thermal resistance case to heatsink K/W 0,10 TC = 25°C 315 W Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C VR = 900 V f = 1 MHz TVJ = 25°C 10 pF TVJ = 25 °C tbd A TVJ = 100 °C tbd A TVJ = 25 °C tbd ns TVJ = 100 °C tbd ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved 30 A; V = 900 V -d F /dt = 400 A/µs 250 Data according to IEC 60747and per semiconductor unless otherwise specified A 20150511a DPJ50XS1800NA advanced Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 °C -40 125 °C 150 °C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm d Spp/App d Spb/Apb VISOL Product Marking 8,6 Logo D P J 50 XS 1800 NA XXXXX ® Zyyww abcd Assembly Line DateCode Ordering Standard 50/60 Hz, RMS; IISOL ≤ 1 mA 3,2 mm 6,8 mm 3000 V 2500 V Part description Part No. = = = = = = = Diode HiPerFRED HiPerDyn + Current Rating [A] Parallel legs with series connected dice Reverse Voltage [V] SOT-227B (minibloc) Assembly Code Ordering Number DPJ50XS1800NA Equivalent Circuits for Simulation V0 10,5 t = 1 second isolation voltage t = 1 minute I terminal to terminal terminal to backside creepage distance on surface | striking distance through air R0 * on die level Delivery Mode Tube Quantity 10 Code No. 517619 T VJ = 150 °C Fast Diode V 0 max threshold voltage 2,92 R0 max slope resistance * 55 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Marking on Product DPJ50XS1800NA V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20150511a DPJ50XS1800NA advanced Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150511a