DH2x61-18A Sonic Fast Recovery Diode VRRM = 1800 V I FAV = 2x t rr = 60 A 230 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DH2x61-18A Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110908b DH2x61-18A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1800 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1800 V IR reverse current, drain current VR = 1800 V TVJ = 25°C 200 µA VR = 1800 V TVJ = 125°C 2 mA TVJ = 25°C 2.01 V 2.51 V 2.02 V VF IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 125°C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 55°C rectangular 2.71 V T VJ = 150 °C 60 A TVJ = 150 °C 1.28 V d = 0.5 for power loss calculation only 11.1 mΩ 0.6 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR =E+03 V f = 1 MHz TVJ = 25°C 32 pF I RM max. reverse recovery current TVJ = 25 °C 60 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved K/W 0.10 TC = 25°C 60 A; VR = 1200 V -di F /dt = 800 A/µs 200 700 W A TVJ = 100°C 70 A TVJ = 25 °C 230 ns TVJ = 100°C 350 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20110908b DH2x61-18A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 150 °C -40 150 °C Weight MD 30 mounting torque MT terminal torque VISOL isolation voltage t = 1 second t = 1 minute d Spp/App d Spb/Apb 50/60 Hz, RMS; IISOL ≤ 1 mA creepage distance on surface | striking distance through air g 1.1 1.5 Nm 1.1 1.5 Nm 3000 V 2500 V terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number DH2x61-18A Similar Part DH2x60-18A DH2x61-16A Equivalent Circuits for Simulation I V0 R0 Marking on Product DH2x61-18A Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 500860 Voltage class 1800 1600 T VJ = 150°C Fast Diode V 0 max threshold voltage 1.28 V R 0 max slope resistance * 9.3 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20110908b DH2x61-18A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110908b DH2x61-18A Fast Diode 140 40 100 TVJ = 100°C TVJ = 100°C 120 VR = 1200 V VR = 1200 V 80 30 100 IF = 60 A 80 IF = 60 A 60 20 [A] 60 [A] 40 [nC] 40 10 TVJ = 125°C 20 20 TVJ = 25°C 0 0 1 2 0 100 3 0 1000 [V] 0 400 800 [A/µs] Fig. 1 Typ. rward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt 1400 2.0 1600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 150 2.5 TVJ = 100°C TVJ = 100°C VR = 1200 V VR = 1200 V 1200 1.5 1200 [A/µs] 120 2.0 90 1.5 1000 800 [µs] 1.0 0.5 IRM [ns] 600 Qr 400 IF = 60 A [V] 60 1.0 tfr 30 0.0 0 0 40 80 120 160 0.5 VFR 200 0 0 400 800 [°C] 1200 1600 0 200 400 [A/µs] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 800 0.0 1000 [A/µs] Fig. 6 Typ. peak forward voltage VFR & typ. forward recovery time tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 100 Constants for ZthJC calculation: 10 -1 [K/W] 10-2 10-3 10-2 10-1 100 i Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 101 [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20110908b