Advance Technical Information Standard Power MOSFETs ISOPLUS247TM IXTR 30N25 (Electrically Isolated Backside) VDSS = 250 V ID (cont) = 25 A Ω RDS(on) = 75 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 25 120 30 A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 150 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ l 5 g l TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Isolated backside* G = Gate D = Drain S = Source * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250µA 250 V VGS(th) VDS = VGS, ID = 250µA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2001 IXYS All rights reserved l l l l l ±100 nA 25 µA 250 µA TJ = 125°C 60 75 mΩ DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l l l Easy assembly Space savings High power density 98873 (12/01) IXTR 30N25 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 24 32 S 3950 pF 510 pF Crss 177 pF td(on) 19 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 30A 19 ns td(off) RG = 3.6 Ω (External), Notes 2, 3 79 ns 17 ns 136 nC 32 nC 52 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 Qgd 0.75 RthJC Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; Note 1 VSD IF = IS, VGS = 0 V, Notes 2, 3 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W 0.15 RthCK ISOPLUS 247 OUTLINE IF = IS, -di/dt = 100 A/µs, VR = 100 V 30 A 120 A 1.5 V 300 ns 3.0 µC Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 15A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025