Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) IXFR 80N15Q VDSS = 150 V = 75 A ID25 RDS(on) = 22.5 mW trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg,High dv/dt Maximum Ratings ISOPLUS 247TM E153432 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 75 320 80 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 310 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ l 5 g l TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Isolated backside* G = Gate S = Source D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure l Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic Rectifier Symbol Test Conditions VDSS VGS = 0 V, ID = 250mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2000 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C Applications l DC-DC converters l Battery chargers 150 V l 2.0 4.0 V l Switched-mode and resonant-mode power supplies DC choppers ±100 nA l AC motor control 25 mA 1 mA 22.5 mW Advantages l Easy assembly l Space savings l High power density 98750 (10/00) IXFR 80N15Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 35 50 S 4600 pF 1400 pF Crss 680 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 55 ns td(off) RG = 2 W (External), Notes 2, 3 68 ns 20 ns 180 nC 39 nC 85 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd RthJC 0.40 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; Note 1 VSD IF = IS, VGS = 0 V, Notes 2, 3 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 80 A 320 A 1.5 V 200 ns 1.2 mC 10 A ISOPLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 40A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025