IXYS IXFR80N15Q

Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
IXFR 80N15Q VDSS = 150 V
= 75 A
ID25
RDS(on) = 22.5 mW
trr £ 200ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
Maximum Ratings
ISOPLUS 247TM
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
75
320
80
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TC = 25°C
310
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
2500
V~
l
5
g
l
TL
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
t = 1 min
Weight
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
l
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
© 2000 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
Applications
l
DC-DC converters
l
Battery chargers
150
V
l
2.0
4.0 V
l
Switched-mode and resonant-mode
power supplies
DC choppers
±100 nA
l
AC motor control
25 mA
1 mA
22.5 mW
Advantages
l
Easy assembly
l
Space savings
l
High power density
98750 (10/00)
IXFR 80N15Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
V DS = 10 V; ID = IT
Notes 2, 3
35
50
S
4600
pF
1400
pF
Crss
680
pF
td(on)
30
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
55
ns
td(off)
RG = 2 W (External), Notes 2, 3
68
ns
20
ns
180
nC
39
nC
85
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Notes 2, 3
Qgd
RthJC
0.40
RthCK
0.15
Source-Drain Diode
Symbol
Test Conditions
IS
V GS = 0 V
ISM
Repetitive; Note 1
VSD
IF = IS, VGS = 0 V, Notes 2, 3
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
t rr
QRM
K/W
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
IRM
80
A
320
A
1.5
V
200
ns
1.2
mC
10
A
ISOPLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. IT = 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025