DHG 20 I 600 HA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 20 A 40 ns Part number DHG 20 I 600 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved max. Unit V VR = 600 V 25 µA VR = 600 V TVJ = 125 °C 1.5 mA IF = 20 A TVJ = 25 °C 2.24 V IF = 40 A 3.15 V IF = 20 A IF = 40 A rectangular TVJ = 125 °C d = 0.5 2.20 V 3.23 V TC = 95°C 20 A TVJ = 150°C 1.12 V 49 mΩ 0.90 K/W 150 °C TC = 25 °C 140 W TVJ = 45°C 150 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 600 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 20 A; VR = 300 V -di F /dt = 450 A/µs VR = 400 V; f = 1 MHz TVJ = 25 °C 8 A TVJ = 125°C 12 A TVJ = 25 °C 40 ns TVJ = 125°C 60 ns TVJ = 25 °C 12 pF Data according to IEC 60747and per diode unless otherwise specified 20110526a DHG 20 I 600 HA preliminary Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight 150 6 MD mounting torque FC mounting force with clip A K/W °C g 0.8 1.2 Nm 20 120 N Product Marking Part number Logo Marking on product DateCode Assembly Code D H G 20 I 600 HA abcdef YYWWZ = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) 000000 Assembly Line Ordering Standard Part Name DHG 20 I 600 HA Similar Part DHG20I600PA IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DHG20I600HA Package TO-220AC (2) Delivering Mode Tube Base Qty Code Key 30 504854 Voltage Class 600 Data according to IEC 60747and per diode unless otherwise specified 20110526a DHG 20 I 600 HA preliminary Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20110526a DHG 20 I 600 HA preliminary 40 0.8 0.7 40 A 30 0.6 IF TVJ = 125°C Qrr 20 0.5 [A] 20 A VR = 300 V [µC] TVJ = 125°C 10 TVJ = 25°C 0 0.0 0.5 10 A 0.4 0.3 1.0 1.5 2.0 2.5 0.2 200 3.0 400 VF [V] 600 800 diF /dt [A/µs] Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 160 20 TVJ = 125°C 40 A 20 A VR = 300 V 10 A 16 TVJ = 125°C 140 VR = 300 V 120 100 IRR trr 80 12 [A] [ns] 60 40 A 8 20 A 10 A 40 20 4 200 300 400 500 600 700 800 0 200 900 diF /dt [A/µs] 300 400 500 600 700 800 900 diF /dt [A/µs] Fig. 3 Typ. peak reverse current IRM vs. di/dt Fig. 4 Typ. recovery time trr versus di/dt 1 ZthJC [K/W] 1 2 3 4 0.1 0.001 0.01 0.1 tP [s] Ri 0.231 0.212 0.19 0.267 ti 0.0005 0.004 0.02 0.15 1 10 Fig. 5 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110526a