DHG60I600HA advanced Sonic Fast Recovery Diode VRRM = 600 V I FAV = 60 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG60I600HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a DHG60I600HA advanced Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 600 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 V IR reverse current, drain current VR = 600 V TVJ = 25°C 200 µA VR = 600 V TVJ = 125°C 4 mA TVJ = 25°C 2.39 V 3.30 V 2.41 V VF IF = forward voltage drop min. 60 A typ. I F = 120 A IF = TVJ = 125 °C 60 A I F = 120 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 85°C rectangular 3.50 V T VJ = 150 °C 60 A TVJ = 150 °C 1.20 V d = 0.5 for power loss calculation only 19.5 mΩ 0.3 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 47 pF I RM max. reverse recovery current TVJ = 25 °C 24 A TVJ = 125°C tbd A t rr reverse recovery time TVJ = 25 °C 35 ns TVJ = 125°C tbd ns IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 60 A; VR = 400 V -di F /dt = 1200 A/µs 415 430 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20130829a DHG60I600HA advanced Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 °C -55 150 °C Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D H G 60 I 600 HA IXYS Logo g = = = = = = = Diode Sonic Fast Recovery Diode extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (2) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DHG60I600HA Similar Part DPH30IS600HI DSEP60-06A DSEP60-06AT Equivalent Circuits for Simulation I V0 R0 Marking on Product DHG60I600HA Package ISOPLUS247 (2) TO-247AD (2) TO-268AA (D3Pak) (2) * on die level Delivery Mode Tube Code No. 510214 Voltage class 600 600 600 T VJ = 150 °C Fast Diode V 0 max threshold voltage 1.2 V R 0 max slope resistance * 17 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a DHG60I600HA advanced Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 2x b e C A1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.430 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 10.92 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20130829a