DPG30C200HB HiPerFRED² VRRM = 200 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG30C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200HB Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25°C 1 µA VR = 200 V TVJ = 150°C 0.08 mA TVJ = 25°C 1.25 V 1.50 V 1.00 V IF = forward voltage drop min. 15 A IF = 30 A IF = 15 A IF = 30 A TVJ = 150 °C TC = 145°C rectangular 1.27 V T VJ = 175 °C 15 A TVJ = 175 °C 0.69 V d = 0.5 for power loss calculation only 17.3 mΩ 1.7 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 20 pF I RM max. reverse recovery current TVJ = 25 °C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.25 TC = 25°C 15 A; VR = 130 V -di F /dt = 200 A/µs 90 240 W A TVJ = 125°C 6.5 A TVJ = 25 °C 35 ns TVJ = 125°C 55 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 50 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D P G 30 C 200 HB IXYS Logo g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DPG30C200HB Similar Part DPG30C200PB DPG30C200PC Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG30C200HB Package TO-220AB (3) TO-263AB (D2Pak) (2) * on die level Delivery Mode Tube Code No. 505797 Voltage class 200 200 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.69 V R 0 max slope resistance * 14.7 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200HB Outlines TO-247 A E A2 Ø P1 ØP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 3x b C A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a DPG30C200HB Fast Diode 80 0.5 16 TVJ = 125°C 30 A VR = 130 V IF = 30 A 14 IF = 15 A 0.4 60 12 IF IRM 10 0.3 40 7.5 A [μC] [A] IF = 7.5 A 15 A Qrr TVJ = 25°C 150°C 8 [A] 0.2 6 20 4 0.1 TVJ = 125°C 2 0 0.0 0.0 0.5 1.0 1.5 2.0 VR = 130 V 0 2.5 0 VF [V] 100 200 300 400 500 600 0 -diF /dt [A/μs] -diF/dt [A/μs] Fig. 3 Typ. peak reverse current IRM versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt Fig. 1 Forward current IF versus VF 70 1.4 100 200 300 400 500 600 16 400 TVJ = 125°C 14 VR = 130 V 1.2 TVJ = 125°C 60 0.8 trr Kf 0.6 IF = 30 A 50 VFR 10 0.2 IRM [ns] 40 Qrr 30 [V] 15 A 20 40 60 80 100 120 140 160 100 200 300 400 500 600 0 100 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ tfr VFR 0 0 TVJ [°C] -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt 1.8 16 14 1.6 12 [μJ] [ns] 6 4 7.5 A 20 0 tfr 200 2 0.0 300 8 0.4 Erec IF = 15 A VR = 130 V 12 1.0 IF = 30 A 1.4 IF = 15 A 10 ZthJC IF = 7.5 A 8 1.2 [K/W] 1.0 6 4 0.8 TVJ = 125°C 2 VR = 130 V 0.6 0 0 100 200 300 400 500 600 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a