DPG10I300PA HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I300PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I300PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25°C 1 µA VR = 300 V TVJ = 150°C 0.06 mA TVJ = 25°C 1.27 V 1.45 V 0.98 V IF = forward voltage drop min. 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 °C TC = 150°C rectangular 1.17 V T VJ = 175 °C 10 A TVJ = 175 °C 0.74 V d = 0.5 for power loss calculation only 17.7 mΩ 2.3 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25°C 15 pF I RM max. reverse recovery current TVJ = 25 °C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.50 TC = 25°C 10 A; VR = 200 V -di F /dt = 200 A/µs 65 140 W A TVJ = 125°C 5.5 A TVJ = 25 °C 35 ns TVJ = 125°C 45 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I300PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D P G 10 I 300 PA XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) Zyyww abcdef Date Code Ordering Standard Part Number DPG10I300PA Similar Part DPG10IM300UC Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG10I300PA Package TO-252AA (DPak) * on die level Delivery Mode Tube Code No. 506640 Voltage class 300 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.74 V R 0 max slope resistance * 14.5 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I300PA Outlines TO-220 A A1 ØP H1 Q E D 4 3 L1 1 L 2x b2 2x b C e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 ØP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A2 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I300PA Fast Diode 30 0.3 20 A VR = 200 V 25 TVJ = 125°C 10 0.2 20 A VR = 200 V 10 A TVJ = 25°C 125°C 150°C 20 IF 12 TVJ = 125°C 10 A 8 Qrr 5A 5A IRR 15 6 [μC] [A] 10 [A] 0.1 4 5 2 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 100 VF [V] 200 300 400 500 0 100 -diF /dt [A/μs] Fig. 1 Forward current IF versus VF 300 400 500 Fig. 3 Typ. reverse recov. current IRR versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 80 1.4 200 -diF /dt [A/μs] 12 600 10 500 TVJ = 125°C VR = 200 V 1.2 1.0 60 0.8 8 trr Kf 0.6 IF = 20 A [ns] IRR 400 TVJ = 125°C VFR tfr IF = 10 A VR = 200 V 6 [V] 300 [ns] 4 40 200 0.4 10 A Qrr 0.2 2 5A 0.0 20 0 40 80 120 160 TVJ [°C] 100 200 300 400 500 0 -diF /dt [A/μs] 100 200 300 400 100 0 500 -diF /dt [A/μs] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 10 tfr 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ VFR Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt 3 TVJ = 125°C VR = 200 V 8 Erec [μJ] 2 IF = 5 A 6 ZthJH 10 A 20 A [K/W] 4 1 2 0 0 100 200 300 400 500 -diF /dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 0 0.001 0.01 0.1 Rthi [K/W] ti [s] 0.3866 0.7062 0.8127 0.3945 0.0004 0.0025 0.022 0.13 1 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a